Single FETs, MOSFETs
P Channel Enhancement Transistor PJSEMI PJM3407PSA Designed for Power Switching and Load Control
PJM3407PSA P-Channel Enhancement Field Effect Transistor The PJM3407PSA is a P-channel enhancement mode field-effect transistor designed with a high-density cell structure for ultra-low on-resistance (RDS(on)). It offers low gate charge and is suitable for load switch and PWM applications. Key ...
Switching Power MOSFET ORIENTAL SEMI OSG65R260FSF NB with Low Switching Loss and Uniform Performance
Product Overview The OSG65R260FSF_NB is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. It offers low RDS(on), low gate charge, and fast switching capabilities with excellent avalanche characteristics. This MOSFET is designed for high...
200V N Channel MOSFET OSEN OSH50N20 Suitable for High Current and High Power Dissipation Applications
Product OverviewThe OSH50N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode ...
High current handling N channel power MOSFET NSS085N100P5 with 100V drain source voltage and low RDS
Product Overview The NSS085N100P5 is a high-performance N-channel 100V Enhancement Mode Power MOSFET from Niu Hang. It features advanced trench MOSFET technology, offering low RDS(ON) and ultra-low gate charge for efficient power handling. This RoHS Compliant component is 100% UIS and RG Tested, ...
P Channel Enhancement Mode MOSFET PJSEMI PJM20P30TE Designed for Power Management and Switching
Product OverviewThe PJM20P30TE is a P-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It features advanced trench technology, 100% avalanche testing, and RoHS compliance, making it suitable for power management solutions. Its robust design ensures reliable ...
N Channel Enhancement Mode Field Effect Transistor NIKO SEM PK632BA featuring PDFN 5x6P package type
Product OverviewThe PK632BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various power switching applications. It offers high current capability and low on-resistance, making it suitable for demanding electronic circuits.Product AttributesBrand: NIKO-SEMPackage: PDFN ...
60V P Channel MOSFET PANJIT PJA3439 with Low On Resistance and RoHS Compliant Halogen Free Packaging
Product OverviewThis 60V P-Channel Enhancement Mode MOSFET in a SOT-23 package offers advanced trench process technology. It is specially designed for applications such as relay drivers and speed line drives. The device features low on-resistance and is compliant with EU RoHS 2011/65/EU directive ...
N Channel Enhancement Mode Power MOSFET PJSEMI PJM60N20TE with Trench Technology and RoHS Compliance
Product OverviewThe PJM60N20TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology, 100% avalanche tested, and RoHS compliant. It is halogen and antimony free, with a moisture sensitivity level of 3. This MOSFET is ideal for load switch and PWM applications, as well as ...
Power MOSFET PJSEMI PJM10N40PA N Channel Enhancement Mode for load switching PWM and power management
Product OverviewThe PJM10N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various ...
power transistor orisilicon OSM4N90SJ featuring gate drain source terminals for electronic circuits
Product Overview Product AttributesBrand: 4N90SJPackage: Technical SpecificationsModelGateDrainSource4N90SJ1232504101957_orisilicon-OSM4N90SJ_C42464481.pdf
Power Management N Channel MOSFET Featuring PJSEMI PJ8205 with High Current Handling Capability
Product OverviewThe PJ8205 is an N-Channel Power MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it suitable for various power management applications.Product AttributesBrand: ...
switching performance PANJIT PJW7N06A 60V N Channel Enhancement Mode MOSFET with low RDS ON resistance
Product OverviewThe PPJW7N06A is a 60V N-Channel Enhancement Mode MOSFET utilizing Advanced Trench Process Technology. It is specially designed for switch load and PWM applications, offering low RDS(ON) values at various gate-source voltages and drain currents. This MOSFET is lead-free in compliance ...
P Channel Enhancement Mode MOSFET PJSEMI PJM3415PDFA Featuring Low RDSon and ESD Protection up to 2KV
PJM3415PDFA P-Channel Enhancement Mode Power MOSFETThe PJM3415PDFA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications such as PWM, load ...
60V P Channel MOSFET PANJIT PJQ4465AP AU R2 000A1 designed for switching in automotive industrial sectors
Product OverviewThe PJQ4465AP-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It features low on-resistance (RDS(ON)), high switching speed, and low gate charge, making it suitable for various automotive and industrial applications. This AEC-Q101 ...
Power MOSFET PJSEMI PJM3018NSA with 2KV ESD Protection and Dissipation in Compact SOT 23 Package
Product OverviewThe PJM3018NSA is an N-Channel Enhancement Mode Power MOSFET designed for switching applications. It features low RDS(ON), a surface mount package, and ESD protection up to 2KV (HBM). With a VDS of 30V and ID of 0.5A, it offers a cost-effective solution for various electronic designs...
Low RDSon Power MOSFET ORIENTAL SEMI OSG65R290FEF Ideal for Lighting Server Power Supply and Charger Applications
Product Overview The OSG65R290xEF series are Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor, designed with advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are ideal for applications ...
PANJIT PJD50N10AL AU L2 000A1 100V N Channel MOSFET with Trench Technology and High Density Cell Design
Product OverviewThe PPJD50N10AL is a 100V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high current handling capabilities and is compliant with EU RoHS 2011/65/EU directive and uses a Green ...
N Channel Enhancement Mode Transistor NIKO-SEM PK6B2BA Featuring Low On Resistance and Switching
Product OverviewNIKO-SEM PK6B2BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with a low on-resistance and efficient switching characteristics, making it suitable for power management solutions.Product AttributesBrand: NIKO...
P Channel MOSFET PJSEMI PJM04P30SQ with Excellent Thermal Performance and Low Gate Threshold Voltage
Product OverviewThe PJM04P30SQ is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include VDS of -30V, ID of -4.1A, and RDS(on) < ...
NIKO SEM PE537BA P Channel Logic Level Enhancement Mode Transistor Designed for Compact and Circuits
Product OverviewThe PE537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers advantages such as logic-level gate drive and a PDFN 3x3P package, making it suitable for space-constrained designs. This transistor is Halogen-free ...
