Single FETs, MOSFETs

quality N Channel MOSFET OSEN IRFP90N20DPBF 200V with Low Level Drive and Tested Avalanche Energy Capability factory

N Channel MOSFET OSEN IRFP90N20DPBF 200V with Low Level Drive and Tested Avalanche Energy Capability

Product OverviewThe IRFP90N20DPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as ...

quality Power MOSFET NH NVT100N10C N Channel Enhancement Mode Trench Device for Switching Applications factory

Power MOSFET NH NVT100N10C N Channel Enhancement Mode Trench Device for Switching Applications

Product Overview The NVT100N10C from Guangdong Niuhang Specification Electronic Technology Co., Ltd. is an N-Channel Enhancement Mode Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for reduced power loss, low gate charge for faster ...

quality High Voltage MOSFET OSEN OSPF16N65 650V N Channel Device for Electronic Ballasts and Power Supplies factory

High Voltage MOSFET OSEN OSPF16N65 650V N Channel Device for Electronic Ballasts and Power Supplies

OSPF16N65 650V N-CHANNEL MOSFETThe OSPF16N65 is a 650V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and tested avalanche energy. Its improved dv/dt capability and high ruggedness make it suitable for ...

quality 650V N channel Enhancement MOSFET NH NPS20N65F Featuring TO 220F Package and High Reliability for Power factory

650V N channel Enhancement MOSFET NH NPS20N65F Featuring TO 220F Package and High Reliability for Power

NPS20N65F 650V N-channel Enhancement MOSFET Product Overview The NPS20N65F is a 650V N-channel Enhancement MOSFET from Niu Hang, designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters...

quality PANJIT BSS84DW R1 00001 dual P channel MOSFET with two isolated transistors in small SOT 363 package factory

PANJIT BSS84DW R1 00001 dual P channel MOSFET with two isolated transistors in small SOT 363 package

Product Description The BSS84DW is a dual P-channel enhancement-mode MOSFET featuring two electrically-isolated MOSFETs housed in a compact SOT-363 (SC70-6L) package. This device is designed for portable applications where space is a critical factor. Its key advantages include low on-resistance, low ...

quality switching OSEN OSPF11N50 500V N CHANNEL MOSFET with improved dv dt and avalanche energy capability factory

switching OSEN OSPF11N50 500V N CHANNEL MOSFET with improved dv dt and avalanche energy capability

Product OverviewThe OSPF11N50 is a 500V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speed, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Tested for avalanche energy, this MOSFET is suitable for high...

quality Dual N Channel Power MOSFET PJSEMI PJM8205JDNSG S Featuring Halogen Free and Antimony Free Materials factory

Dual N Channel Power MOSFET PJSEMI PJM8205JDNSG S Featuring Halogen Free and Antimony Free Materials

Product OverviewThe PJM8205JDNSG-S is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as load switching, PWM applications, and power management. This device is RoHS and Reach compliant, and is halogen and antimony free.Product ...

quality Low RDS ON N Channel MOSFET NH NPS2N60S Designed for High Frequency Circuits and Adaptors Applications factory

Low RDS ON N Channel MOSFET NH NPS2N60S Designed for High Frequency Circuits and Adaptors Applications

Product Overview The NPS2N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, this MOSFET features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high ...

quality High Voltage Power MOSFET OSEN IRFP260NPBF 200V N Channel for Electronic Ballasts and Power Correction factory

High Voltage Power MOSFET OSEN IRFP260NPBF 200V N Channel for Electronic Ballasts and Power Correction

Product OverviewThe IRFP260NPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power ...

quality NIKO-SEM PA410BD N Channel Enhancement Mode Transistor Ideal for Power Switching and Amplification factory

NIKO-SEM PA410BD N Channel Enhancement Mode Transistor Ideal for Power Switching and Amplification

Product OverviewThe PA410BD is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers robust performance with high voltage and current handling capabilities, making it suitable for power switching and amplification circuits.Product AttributesBra...

quality NIKO SEM PK501BA P Channel Logic Level MOSFET with Low Conduction Loss and High ESD Protection Rating factory

NIKO SEM PK501BA P Channel Logic Level MOSFET with Low Conduction Loss and High ESD Protection Rating

Product OverviewThe PK501BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various protection and switching applications. It features low RDS(on) for minimal conduction losses, an optimized gate charge for reduced switching losses, and ESD protection up to 2KV. This ...

quality Complementary N Channel and P Channel Power MOSFET PJSEMI PJM30C30DL for power management applications factory

Complementary N Channel and P Channel Power MOSFET PJSEMI PJM30C30DL for power management applications

Product OverviewThe PJM30C30DL is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche tested, and is RoHS compliant, halogen and antimony free. Ideal for use in brushless motors and portable equipment...

quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching factory

Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching

Product Overview The SFS06R06PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous ...

quality N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package factory

N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package

Product Overview The BSS138K is an N-Channel Enhancement Mode Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V and 3.3V logic level control, housed in a SOT23 package. This Pb-Free, RoHS Compliant component ...

quality dual channel battery protection featuring orisilicon OSM002 for fast charging and discharging control factory

dual channel battery protection featuring orisilicon OSM002 for fast charging and discharging control

Product OverviewThis is a dual-channel product designed for secondary protection of lithium batteries, utilizing advanced technology. It achieves extremely low source-to-source on-resistance at a specific gate-source voltage, effectively addressing charging and discharging issues in fast-charging ...

quality NIKO SEM PZ2N7002M N Channel MOSFET with Operating Temperature Range Minus 40 to 150 Degrees Celsius factory

NIKO SEM PZ2N7002M N Channel MOSFET with Operating Temperature Range Minus 40 to 150 Degrees Celsius

Product OverviewThe PZ2N7002M is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It features Halogen-Free & Lead-Free compliance and ESD protection.Product AttributesBrand: NIKO-SEMPackage Type: SOT-23(S)Certifications: Halogen-Free & ...

quality Charge balance technology MOSFET ORIENTAL SEMI OSG60R180FF with low gate charge and robust switching factory

Charge balance technology MOSFET ORIENTAL SEMI OSG60R180FF with low gate charge and robust switching

Product Overview The OSG60R180FF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This enhancement-mode MOSFET is optimized for extreme switching ...

quality N Channel Enhancement Mode Transistor with Environmentally Friendly Lead Free Design NIKO-SEM PE616BA factory

N Channel Enhancement Mode Transistor with Environmentally Friendly Lead Free Design NIKO-SEM PE616BA

Product OverviewThe PE616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with features like low on-resistance and fast switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmental...

quality Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R03GF with Excellent Avalanche Characteristics factory

Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R03GF with Excellent Avalanche Characteristics

Product Overview The SFS06R03GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification ...

quality Gan hemts normally off device nitrides yhj 65p150amc ideal for ac dc converters and motor drive systems factory

Gan hemts normally off device nitrides yhj 65p150amc ideal for ac dc converters and motor drive systems

Product OverviewThe YHJ-65P150AMC is a normally-off GaN High Electron Mobility Transistor (HEMT) device utilizing a cascode configuration. It offers high breakdown voltage, high current handling, and high operating speed, making it suitable for high-power applications. Key features include gate ...

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