Single FETs, MOSFETs

Product Overview This 3-channel MOSFET offers low logic level gate drive and a low RDS(ON). It meets UL 94V-0 flammability rating and is Moisture Sensitivity Level 1. The device is Halogen Free available upon request by adding the suffix "-HF" and features a Lead Free Finish, RoHS Compliant. It operates within a junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C. Maximum thermal resistance is 62.5C/W (Junction to Ambient). Product

Product OverviewThe MGC066N10N is a product from Megain, as indicated by the recurring website address. Further details regarding its function, usage, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainModel: MGC066N10NTechnical SpecificationsModelRev.MGC066N10N1.0MGC066N10N1.0MGC066N10N1.0MGC066N10N1.0MGC066N10N1.02411220035_Megain-MGC066N10N_C30232454.pdf

MDD05N40A 40V N-Channel Enhancement Mode MOSFETThe MDD05N40A is a 40V N-channel MOSFET designed with a unique device architecture for low RDS(ON), fast switching, and excellent avalanche characteristics. It is ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment. Key features include a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current

Product OverviewThe MDD2300 is a 20V N-Channel Enhancement Mode MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It is suitable for load switch, DC/DC converter, switching circuits, and power management applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain

Product Overview The MDT30N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and

Product OverviewThe VN0550 is an N-Channel Enhancement-mode (normally-off) Vertical DMOS FET utilizing a well-proven silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage,

Product Overview The SIL2324A is an N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low on-resistance (RDS(ON)) and is housed in an SOT23-6L package. The device meets UL 94 V-0 flammability rating, has a Moisture Sensitivity Level 1, and is available in lead-free and RoHS-compliant versions. It is suitable for applications requiring high performance and reliability, with an operating junction temperature range of -55C to +150C. Product

Product Overview The MJF28N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with advanced Super Junction technology for easy gate switching control. It offers robust performance with a 700V breakdown voltage and a continuous drain current of 28A, featuring a low typical on-resistance of 135m at VGS = 10V. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and

Product OverviewThe MGC031N06N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low gate charge and low RDS(ON). It is 100% EAS Guaranteed and available in a Green Device option. This MOSFET is ideal for applications such as Motor Control, DC/DC Converters, and Synchronous rectifier applications.Product AttributesBrand: MegaOrigin: ChinaMaterial: N-MOSFETCertifications: Green Device AvailableTechnical SpecificationsParameterConditionMinTypMaxUnitsDrai

Product OverviewThe ME50N06T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for power management, DC/DC converters, and load switch applications.Product AttributesBrand: Matsuki Electric/ Force mos (implied by datasheet notes)Origin: Not specifiedMaterial: Not

Product Overview The MJF20N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. Designed for easy gate switching control and 100% avalanche tested, this MOSFET offers a 700V rating with a continuous drain current of 20A and a typical on-resistance of 0.21 at VGS = 10V. It is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor

Product OverviewThe MGC080N10N is a product from Megain, as indicated by the provided text. Further details regarding its function, advantages, or application scenarios are not explicitly stated in the input.Product AttributesBrand: MegainModel: MGC080N10NTechnical SpecificationsParameterValuePart NumberMGC080N10N2506251635_Megain-MGC080N10N_C49242762.pdf

Product OverviewThe MMFT65R195P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides designers with the advantage of low EMI and reduced switching losses, making it suitable for various power applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Package: TO-220FTPacking:

The MGC085N10N is a product from Megain, indicated by the brand name and model number. Further details regarding its function, usage, advantages, application scenarios, origin, material, color, certifications, and specific technical parameters are not clearly derivable from the provided text.Brand: MegainModel: MGC085N10NParameterValueRev1.02411220027_Megain-MGC085N10N_C41380435.pdf

Product OverviewThe M4M-0040-120D is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-performance power applications. It offers a unique combination of high blocking voltage and low on-resistance, enabling higher system efficiency and reduced cooling requirements. Its fast switching speeds with low capacitances, ease of paralleling, and simple drive characteristics make it suitable for demanding applications such as solar inverters, switch mode

Product Overview The 2N7002KS is an N-Channel Trench Power MV MOSFET from MCC Semi, designed with ESD protection up to 2KV (HBM). This halogen-free, "Green" device features a UL 94 V-0 flammability rating and a lead-free finish, making it RoHS compliant. It operates within a wide junction temperature range of -55C to +150C and offers a low thermal resistance of 357C/W (Junction to Ambient). Its robust construction and electrical characteristics make it suitable for various

Product Overview The MU4001Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. It offers robust performance with a -40V drain-source voltage and -40A continuous drain current, boasting a low typical on-resistance of 7.7m at VGS = -10V. This MOSFET is designed for efficiency with low gate charge and is 100% UIS and DVDS tested for reliability. It is also a lead-free product. Ideal applications include load

Product OverviewThe MPG100N07P is a high-performance N-channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its design emphasizes high ESD capability, high density cell structure for ultra-low Rdson, and robust avalanche energy characteristics for stability and uniformity

Product OverviewThe MMD80R900QZ is a power MOSFET utilizing Magnachip's advanced super junction technology, designed to achieve very low on-resistance and gate charge. This MOSFET offers significantly higher efficiency through optimized charge coupling technology, providing designers with the advantage of low EMI and reduced switching losses. It is suitable for various switching applications, including PFC power supply stages and adapters.Product AttributesBrand: Magnachip

Product OverviewThe MEM2310M3G Series is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications and low power dissipation in a very small outline surface mount package. It is ideal for battery management, high-speed switching, and low-power DC to DC converters.Product AttributesBrand: MicroneSeries: MEM2310M3GPackage: SOT23