Single FETs, MOSFETs

Product OverviewThe MEM2N60 is a N-channel Power MOSFET designed for high voltage and high-speed switching applications. It offers features such as low CRSS and fast switching, making it suitable for switching regulator applications.Product AttributesBrand: MicroneOrigin: China (www.microne.com.cn)Technical SpecificationsParameterSymbolRatingsUnitTest ConditionMinTypeMaxMaximum RatingsVDSS600VVGSS±30VID (TA=25)2AID (TA=100)1.2AIDM8APulse1,2Pd (TA=25)41WTOpr-55-150Tstg-55

Product Overview The MCT04N15 is an N-Channel Power MOSFET designed with a high-density cell structure for ultra-low RDS(ON). It features a fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, designated as a "Green" Device. It is RoHS Compliant, with the "P" suffix indicating RoHS compliance. The MCT04N15 is suitable

Product Overview The MU3011X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a 30V drain-source voltage and a continuous drain current of 60A at 25C, with a low typical RDS(ON) of 3.6m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, making it suitable for applications such as load switches, PWM applications, and power management. It is 100% EAS guaranteed for reliabilit

Product OverviewThe MDD2306 is a 30V N-Channel Enhancement Mode MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It is suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source

Product OverviewThe MPG190N04P is a high-performance N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The TO-220 package

Product OverviewThe MDD5N50D is a 500V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for use in electronic ballasts, switched-mode power supplies, and UPS systems.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS compliantTechnical SpecificationsParameterSymbol

Product Overview The SI2302 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The transistor is rugged, lead-free, and comes in a compact SOT-23 package. It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. A halogen-free option is available upon request.

2410122015_MIRACLE-POWER-MJF07N65_C17702004.pdf

Product DescriptionThe MP3205 is a silicon N-Channel Enhanced MOSFET designed using advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.Product AttributesBrand: MNS-KX (www.mns-kx.com)Certifications: RoHS productTechnical SpecificationsParameterRatingUnitsConditionsMin.Typ.Max

Product OverviewThe ME4174 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.Product AttributesBr

Product OverviewThe M4M-0040-120K is a Silicon Carbide Power MOSFET designed for N-Channel Enhancement Mode operation. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive, with avalanche ruggedness. This MOSFET provides higher system efficiency, reduced cooling requirements, increased power density, and enables increased system switching frequency, making it ideal for motor drive

Product DescriptionThe MD20N65 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key advantages include high voltage capability (VDS=650V), low on-resistance (Rdson

Product OverviewThe MDDG10R08P is a 100V N-Channel Enhancement Mode MOSFET from MDD Semiconductor, utilizing an advanced Power Trench process with Shielded Gate technology. This design optimizes for minimal on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is 100% UIS Tested and RoHS Compliant.Product AttributesBrand: MDD SemiconductorOrigin: Craftsman-Made Consciention ChipCertifications: RoHS CompliantTechnical

Product Overview The SI8810 is an N-Channel MOSFET designed for various applications. It features low RDS(ON), a rugged and reliable construction, and ESD protected gate. This component is RoHS compliant, lead-free, and meets UL 94 V-0 flammability rating. It is also available in Halogen Free upon request. The SI8810 is suitable for applications requiring efficient power switching and robust performance. Product Attributes Brand: MCCSEMI.COM Product Type: N-Channel MOSFET

Product OverviewThe ME20N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include

Product OverviewThe MPT015N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy capabilities. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNSCertifications: RoHS productTechnical SpecificationsParameterValueUnitConditionsDrain-Source Voltage (VDS)100VOn

Product Overview The SIL03N10 is an N-channel MOSFET featuring a high-density cell design for low RDS(on) and Trench Power HV MOSFET Technology. It is designed for applications requiring efficient power handling and robust performance. The device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free available upon request. It is Lead Free Finish/RoHS Compliant. Product Attributes Brand: MCCSEMI Technology: Trench Power HV MOSFET Flammabilit

Product Overview The MU2001D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers a 20V drain-source voltage and a continuous drain current of 90A, with a low RDS(on) of 2.4m at VGS = 4.5V. This MOSFET is designed for excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It features 100% EAS guaranteed and is Halogen-free and RoHS-compliant. Product Attributes Brand: Miracle Technology

Product OverviewThis N-Channel MOSFET, produced using MDD's advanced Power Trench technology, is optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management in various applications including telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.Product AttributesBrand: MDDOrigin: Craftsman-Made

Product OverviewThe MDD3401A is a -30V P-Channel Enhancement Mode MOSFET designed for load and power switching applications. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for interfacing and switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParamete