Single FETs, MOSFETs

Product Overview The 2N7002DW is a dual N-channel MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON) and meets UL 94 V-0 flammability rating. This device is Moisture Sensitivity Level 1, Halogen Free, Green, and Lead Free/RoHS Compliant. It is suitable for general-purpose applications where a compact and reliable MOSFET is required. Product Attributes Brand: MCCSEMI.COM Model: 2N7002DW Channel

Product DescriptionThe MPT65N08 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for motor drivers and high-speed switching applications, offering low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness.Product AttributesBrand: MNS (implied from www.mns-kx.com

Product Overview The BSS138 is an N-Channel MOSFET designed for high-density cell applications, offering extremely low RDS(ON) for efficient voltage-controlled small signal switching. This surface mount device features a high flammability rating (UL 94 V-0) and is moisture sensitivity level 1 compliant. It is available in a lead-free finish and is RoHS compliant. The BSS138 is suitable for applications requiring a reliable and efficient MOSFET switch. Product Attributes Brand

Product Overview The MCQ15N10Y is an N-Channel MOSFET from MCCSEMI, designed with Split Gate Trench MOSFET Technology. It offers low gate charge and is halogen-free, with an epoxy that meets UL 94 V-0 flammability rating. This lead-free and RoHS compliant component is suitable for applications requiring reliable N-channel MOSFET performance, operating within a wide temperature range of -55C to +150C. Product Attributes Brand: MCCSEMI Technology: Split Gate Trench MOSFET

Product OverviewThe IRFZ44NS-MNS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent

Product Overview The MU3401V is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for load switching and general applications, this MOSFET offers a drain-source voltage of -30V and a continuous drain current of -4A. It features a typical on-resistance (RDS(ON)) of 39m at VGS = -10V. The device is RoHS and Halogen-Free compliant. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: P-Channel Enhancement Mode MOSFET Compliance: RoHS

Product Overview The Mini-Circuits TAV2-14LN+ is a MMIC E-PHEMT transistor designed for ultra-low noise and medium current applications across a wide frequency range of 0.05 to 10 GHz, usable up to 12 GHz. This device offers a compelling combination of high gain (16.4 dB typ. at 6 GHz) and a very low noise figure (0.6 dB typ. at 6 GHz), contributing to lower overall system noise. Its enhanced linearity, evidenced by a high output IP3 of +30.9 dBm typ. at 6 GHz, makes it

Product DescriptionThe MD50N20 is a silicon N-Channel Enhanced Power MOSFET utilizing advanced MOSFET technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaMaterial: Silicon N-Channel Enhanced MOSFETCertifications: Not specifiedColor: Not specifiedTechnical Specificatio

Product OverviewThe MDD06P03C is a 30V P-channel enhancement mode MOSFET featuring a unique device design for low RDS(ON), fast switching, and excellent avalanche characteristics. Its high-density cell design offers extremely low on-resistance and maximum DC current capability, making it suitable for portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.Product AttributesBrand: Microdiode Electronics (Shenzhen)Origin:

Product OverviewThe MDD3407A is a -30V P-Channel Enhancement Mode MOSFET designed for load switch and switching circuit applications. It features advanced trench technology, offering excellent Rds(on) and low gate charge performance, making it suitable for high-speed line drivers and power management functions. This device is lead-free and comes in a SOT-23-3 package.Product AttributesBrand: Microdiode Electronics (Shenzhen)Type: P-Channel Enhancement Mode MOSFETPackage: SOT

Product DescriptionThe MPG100N03S is an N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of applications, including power switching and adapters/chargers, due to its low ON resistance and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, ChinaCertifications: Not specifiedMaterial: Not

Product OverviewThe ME2604 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.Product AttributesBrand: ME (implied by product name)Product Variants: ME2604 (Pb-free

Product Overview The MJQ28N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. It offers a 600V drain-source voltage, 28A continuous drain current, and a typical on-resistance of 120m at VGS = 10V. This MOSFET is designed for easy gate switching control and is 100% avalanche tested. It is suitable for applications in PC power, server power, telecom power, adaptors, LCD & PDP TVs, LED lighting, and UPS systems. It is

Product OverviewThe IRFB4310 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its design emphasizes high ESD capability, a high-density cell structure for reduced Rds(on), and fully characterized avalanche voltage and current for robust performance and

Product OverviewThe TN2640 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it

MDD50P02Q 20V P-Channel Enhancement Mode MOSFETThis P-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.Product AttributesBrand: MDDTechnology:

Product OverviewThe MDD210N40P is an N-Channel MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including battery protection, power management, and switched-mode power supplies. Key features include low RDS(ON), extremely low switching loss, and excellent reliability and uniformity.Product AttributesBrand: Microdiode Electronics (Shenzhen)Origin: ShenzhenPackage: TO-220C

Product Overview The MCAC20N15 is an N-channel MOSFET featuring an advanced trench cell design for low thermal resistance. It is halogen-free, with an epoxy meeting UL 94 V-0 flammability rating, and is RoHS compliant. This MOSFET operates within a junction temperature range of -55C to +150C and has a storage temperature range of -55C to +150C. Its low thermal resistance of 3.5C/W (Junction to Case) makes it suitable for various power applications. Product Attributes Brand:

Product Overview The MCU60N04A is an N-CHANNEL MOSFET designed with Split Gate Trench Power MV MOSFET technology. It features low RDS(on) and low gate charge, making it suitable for various power applications. The device meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available in a Lead Free Finish/RoHS Compliant version. Halogen Free options are available upon request. Product Attributes Brand: MCCSEMI Technology: N-CHANNEL MOSFET,

Product Overview The MPC07N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component offers high performance with specifications including 800V, 7A, and a typical RDS(ON) of 1.4 at VGS = 10V. It features low gate charge, fast switching, and is 100% tested for single pulse avalanche energy. Its low reverse transfer capacitances make it suitable for applications such as adapters, LCD panel power, E-bike chargers, and switching mode power supplies. Product