Single FETs, MOSFETs

Product DescriptionThe MPT052N10S is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for synchronous rectification and high-speed switching applications.Key CharacteristicsVDS= 100V, ID= 120ARds(on)

Product OverviewThe ME4894-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include

Product OverviewThe MGP055N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers a high breakdown voltage of 100V and a low on-state resistance (RDS(ON)) of typically 5.5m at VGS=10V. This device is designed for applications requiring fast switching speeds and high efficiency, with 100% EAS guaranteed. It is suitable for DC/DC converters and high-frequency switching applications, including synchronous rectification. A green device option is available

Product OverviewThe ME2620-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. It offers low in-line power loss within a very small outline surface mount package.Product AttributesBrand: ME (implied from

Product Overview This N-Channel MOSFET features low gate threshold voltage, low input capacitance, and low on-resistance. It is designed to meet UL 94V-0 flammability rating and Moisture Sensitivity Level 1. The device is available in a lead-free finish and is RoHS compliant. Suitable for applications requiring efficient switching and low power dissipation. Product Attributes Brand: Micro Commercial Components (MCC) Material: Epoxy Flammability Rating: UL 94V-0 Moisture

Product Overview The P50N20-MNS is an N-Channel Enhanced MOSFET developed using advanced MOSFET technology. This technology minimizes conduction losses, improves switching performance, and enhances avalanche energy. It is well-suited for Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Product Attributes Brand: MNS (Shenzhen Minos) Origin: China (Shenzhen) Material: Silicon Color: Not specified Certifications: Not specified

Product Overview The MPF20N60 is a 600V, 20A N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features low Crss, fast switching characteristics, and is 100% avalanche tested. This MOSFET is ideal for use in adaptors, standby power supplies, and switching power supplies. Product Attributes Brand: Miracle Technology Co., Ltd. Product Line: MPF Series Technology: Miracle Technology Channel Type: N-Channel Package Type:

Product Overview The ME08N20 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making the device highly suitable for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converter circuits that require low in-line power loss. Key features include an RDS(ON) of 0.4 at VGS=10V, a super high density cell design for

Product Overview The SI3400A is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for extremely low RDS(ON) and exceptional on-resistance and DC current capability. It features a high breakdown voltage and is suitable for various applications requiring efficient power handling. The device is available in a SOT-23 package and meets UL 94 V-0 flammability rating. A halogen-free option is available. Product Attributes Brand: Micro

Product OverviewThe MGH073N15N is an N-MOSFET from Mega In, featuring Advanced Trench MOS Technology for low gate charge and low RDS(ON). It is 100% EAS Guaranteed and available as a Green Device. This MOSFET is suitable for applications such as Load Switch, LED Applications, Networking Applications, and Quick Charger.Product AttributesBrand: Mega InPart Number: MGH073N15NTechnology: Advanced Trench MOSCertifications: Green Device AvailableTechnical SpecificationsParameterVal

Product OverviewThe MDDG2C065R060K3 is a 650V N-Channel SiC Power MOSFET featuring 3rd Generation SiC MOSFET technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This MOSFET is designed to enhance system efficiency, reduce cooling requirements, increase power density, and enable higher system switching frequencies. It is easy to parallel and simple to drive, making

Product Overview The MCB160N10Y is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for excellent heat dissipation and high-density cell design for low RDS(on). It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This device is available as Halogen Free upon request by adding the "-HF" suffix and is Lead Free/RoHS Compliant. It is suitable for applications requiring efficient power management and reliable performanc

Product OverviewThe ME75N03 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBrand:

Product Overview The 2N7002K is a 60V N-Channel Enhancement Mode MOSFET designed for voltage-controlled small signal switching applications. It features Trench Power MV MOSFET technology, offering low input capacitance, fast switching speeds, and low input/output leakage. This device is ESD protected up to 2KV (HBM) and is suitable for battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS. Product Attributes Brand: Not specified Origin

Product OverviewThe MPG40P10P is a Silicon P-Channel Power MOSFET utilizing advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers.Product AttributesBrand: MNSOrigin: Shenzhen Minos (implied from contact info)Material: SiliconColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsDrain-to-Source Breakdown VoltageVDSVGS

Product OverviewThe MGC050N10N is a component from Megain, designed for specific technical applications. Further details regarding its function, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainModel: MGC050N10NTechnical SpecificationsParameterValueRevision1.02506251635_Megain-MGC050N10N_C49242760.pdf

Product Overview The SI3401A is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features an extremely low RDS(ON) due to its high-density cell design, offering exceptional on-resistance and maximum DC current capability. This transistor is housed in a SOT-23 package and is RoHS Compliant, meeting stringent environmental standards. Its robust design and reliable performance make it suitable for various industrial and

Product OverviewThe MPT042N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for motor drivers and high-speed switching applications.Product AttributesBrand: MNS (implied by www.mns-kx.com)Certifications: RoHS productTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @ VGS=10V (m)ID @ TC=25C (A)EAS

Product OverviewThis N-Channel MOSFET, produced using MDD's advanced Power Trench technology, is optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is suitable for power management in telecom and industrial automation, motor drives, uninterruptible power supplies, and current switching in DC/DC & AC/DC sub-systems.Product AttributesBrand: MDDOrigin: ShenzhenCertifications: RoHS CompliantTechnical Specification

Product OverviewThe AO3402 is a lead-free, SOT-23 packaged N-Channel MOSFET designed for surface mount applications. It offers a robust set of electrical characteristics suitable for various electronic designs.Product AttributesLead Free Product: AcquiredPackage: SOT-23Brand: Microdiode (implied by URL)Technical SpecificationsParameterSymbolLimitUnitNotesMaximum Ratings and Thermal CharacteristicsDrain-Source VoltageVDS30VGate-Source VoltageVGS±16VContinuous Drain CurrentID5