Single FETs, MOSFETs

Product Overview The 2N7002KHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification and ESD protection up to 2KV (HBM). It utilizes Trench MV MOSFET Technology and is designed for high reliability with Moisture Sensitivity Level 1 and UL 94 V-0 flammability rating. This "Green" device is Halogen Free and RoHS Compliant, suitable for a wide operating junction temperature range of -55C to +150C. Product Attributes Brand: MCCSEMI.COM Model: 2N7002KHE3 Qualification: AEC-Q101

Supertex DN2540 N-Channel Depletion-Mode Vertical DMOS FETThe Supertex DN2540 is a low threshold depletion mode (normally-on) transistor featuring an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, while being free from secondary breakdown and thermal runaway. This device is suitable for a wide range of switching and amplifying applications, including normally-on switches, solid-state

Product OverviewThe ME2614 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBrand:

Product Overview The MSJ001L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This component offers superior performance with a 200V breakdown voltage and a continuous drain current of 122A at 25C. Key advantages include excellent RDS(on) of 8.0m (typ.) at VGS = 10V and low gate charge, making it ideal for applications requiring efficient motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC (SR) sub

Product OverviewThe MLS60R150W is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for high-speed switching applications such as SMPS and general-purpose use.Product AttributesBrand: MNS-KXCertifications: RoHSTechnical SpecificationsParameterValueUnitsConditionsKEY CHARACTERISTICSVDS600VRdson

Product Overview The MCC MCB70N10YB is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for high performance with low RDS(on) and FOM. It is a Halogen Free, "Green" Device, meeting UL 94 V-0 flammability rating and is Lead Free/RoHS Compliant. This MOSFET is suitable for various applications requiring efficient power switching and control. Product Attributes Brand: MCC Model: MCB70N10YB Technology: Split Gate Trench MOSFET Moisture Sensitivity Level

Product OverviewThe MGV012N10N is a high-performance N-channel MOSFET from MegaIn, designed for demanding applications. Featuring a 100V drain-source voltage and a low on-resistance of 1.2m (typ.), it offers excellent efficiency by minimizing conductive losses. Its advanced high cell density Trench technology contributes to super low gate charge and excellent CdV/dt effect decline, making it suitable for high-frequency switching applications. The low thermal resistance

Product DescriptionThe IRFP260N is a silicon N-Channel Enhanced Power MOSFET utilizing advanced technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This transistor is ideal for applications requiring high-speed switching and general-purpose power management, including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.Product AttributesBrand: mns-kx.comProduct

Product Overview The SI2324A is an N-Channel Power MOSFET featuring TrenchFET technology for low on-resistance (RDS(ON)). This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, designated as a "Green" Device. It is also Lead Free and RoHS Compliant. The MOSFET operates within a wide temperature range and is suitable for various applications requiring efficient power switching. Product Attributes Brand: MCCSEMI.COM Model: SI2324A

Product Overview The MS4004Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced shielded-gate technology. It offers a 40V drain-source voltage and a continuous drain current of 120A with a low RDS(ON) of 2.1m (Typ.) at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic

Product Overview The SI01P10 is a P-Channel MOSFET featuring Trench MV MOSFET Technology. It is designed for applications requiring high reliability and performance, with a moisture sensitivity level of 1 and a halogen-free, RoHS-compliant build. This device meets UL 94 V-0 flammability standards and operates within a wide temperature range from -55C to +150C. Its robust construction and advanced technology make it suitable for various industrial and electronic applications.

TC6320 N-Channel and P-Channel Enhancement-Mode MOSFET PairThe TC6320 is a complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair designed for high-voltage pulser applications. It utilizes an advanced vertical DMOS structure and a proven silicon gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from

Product OverviewThe IRFR540ZTRPBF is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, fully characterized avalanche voltage and current, and good stability contribute to its reliability and performance.Product AttributesB

Product OverviewThe MPT023N10-T is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNSCertifications: RoHS productTechnical SpecificationsParameterValueUnitTest ConditionsMinTypMaxDrain-Source Voltage100VVGS

Product OverviewThe MP3N150S is a Silicon N-Channel Power MOSFET utilizing advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers. Key features include a high VDS of 1500V, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, ChinaPackage: TO-263Certifications: Not

MS8002C N-Channel Enhancement Mode MOSFET The MS8002C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features ultra-low RDS(ON) and low gate charge, making it ideal for efficient power management. This MOSFET is 100% EAS guaranteed, halogen-free, and RoHS-compliant, ensuring reliability and environmental responsibility. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: N-Channel

Product Overview The MCAC60N08Y is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, offering low thermal resistance and a halogen-free design. It meets UL 94 V-0 flammability rating and is Lead Free Finish/RoHS Compliant. This MOSFET is suitable for applications requiring efficient power handling and thermal management. Product Attributes Brand: MCC Technology: Split Gate Trench MOSFET Flammability Rating: UL 94 V-0 Compliance: Halogen Free, Lead Free Finish

Product Overview The SAV-541+ is an ultra-low noise, medium current E-PHEMT transistor designed for high IP3 performance and single positive supply voltage operation. It excels in demanding base station applications, offering outstanding noise figures, particularly below 2.5 GHz. This device can be used as a replacement for Avago ATF-54143 and is suitable for applications in Cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN. Mini-Circuits also offers these units

Product Overview The 2N7002 is an N-Channel MOSFET featuring advanced trench process technology, high input impedance, and high-speed switching capabilities. It offers CMOS logic compatible input and is designed for general-purpose applications. The device meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request. Product Attributes Brand: Micro Commercial Components (MCC) Model: 2N7002 Technology:

Product Overview The MCG60N06YHE3 is a high-density N-Channel MOSFET featuring Split Gate Trench MOSFET Technology for ultra-low RDS(on). It is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, making it suitable for various industrial applications. The device offers excellent thermal performance with a low Junction to Case thermal resistance. Product Attributes Brand: MCC Technology: Split Gate Trench MOSFET Certifications: AEC-Q101 Qualified Environmental: Halogen Free