Single FETs, MOSFETs

Product OverviewThe IRF3205S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity

Product OverviewThe XR46000 is a silicon N-channel enhanced power MOSFET designed for various power supply systems, particularly for AC step driving applications in LED lighting. It offers low conduction loss, good switching performance, and high avalanche energy, making it suitable for LED lighting applications such as downlights, high bays, and specialty architectural lighting. The device features fast switching, improved ESD capability, low gate charge (Typ. 7.5nC), and

Product OverviewThe MD20N50H is a silicon N-Channel Enhanced Power MOSFET utilizing advanced technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications.Product AttributesBrand: MNS-KXCertifications: RoHS productTechnical SpecificationsParameterValueUnitsConditionsGeneral FeaturesVDS500VRds(on)

Product Overview The MCAC150N03A is an N-Channel MOSFET featuring Trench Power MV MOSFET Technology and a high-density cell design for low RDS(ON). It offers excellent heat dissipation due to its DFN5060 package. This device is Moisture Sensitivity Level 1, Halogen Free ("Green" Device), and meets UL 94 V-0 flammability rating. It is Lead Free and RoHS Compliant. The operating junction temperature range is -55C to +150C. Product Attributes Brand: MCC (Micro Commercial

The MEM2302X is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is particularly suited for low voltage applications and low power dissipation in a very small outline surface mount package (SOT23). Key features include a 20V/3A rating, low RDS(ON) values, and a high-density cell design for ultra-low on-resistance. This device is ideal for battery management, high-speed switching, and

DN3525 N-Channel Depletion-Mode Vertical DMOS FET The DN3525 is a low-threshold, normally-on depletion-mode transistor featuring an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, combined with the power handling capabilities of bipolar transistors. This device is free from thermal runaway and thermally induced secondary breakdown, making it suitable for a wide range of switching and

Product Overview The SI3415 is a P-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications. It features excellent RDS(ON) and low gate charge, operating with low gate voltages. This transistor is RoHS compliant, lead-free, and meets UL 94 V-0 flammability rating. Halogen-free options are available upon request. Product Attributes Brand: Micro Commercial Components (MCC) Compliance: RoHS Compliant, Lead Free Flammability Rating: UL 94

Product DescriptionThe MPG100N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and

Product OverviewThe MPF3N150 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances.Product AttributesBrand: MNS (Shenzhen Minos Technology Co., Ltd.)Origin: ChinaMaterial: Silicon N-ChannelCertifications: Not specifiedColor: Not specifiedTechnical SpecificationsSy

Product OverviewThe Supertex VP3203 is a low threshold, P-Channel, enhancement-mode (normally-off) Vertical DMOS FET. It utilizes Supertexs silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for various switching and amplifying applications requiring low threshold voltage,

Product OverviewThe ME2N7002E is an N-Channel enhancement mode field-effect transistor utilizing high cell density DMOS technology. It is designed for low on-state resistance, providing rugged, reliable, and fast switching performance. This transistor is suitable for applications requiring up to 300mA DC and can handle pulsed currents up to 1.2A, making it ideal for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other

Product OverviewMPF50N25 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology to minimize conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for SMPS, high-speed switching, and general-purpose applications.Product AttributesBrand: MNSCertifications: RoHS productTechnical SpecificationsParameterValueUnitDescriptionVDS250VDrain-to-Source VoltageID50AContinuous Drain CurrentID (TC=100C)26AContinuous Drain

Product Overview The MPF06N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 6A at 25C. This MOSFET offers low ON resistance (Typ. 1.95 @ VGS = 10V), low gate charge, low reverse transfer capacitance, and fast switching characteristics. It is 100% avalanche tested for enhanced reliability. Product Attributes Brand:

Product Overview The MS0003Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers a 100V drain-source voltage and a continuous drain current of 103A at 25C, with a low on-resistance of 4.5m (typ.) at VGS = 10V. It is designed for high-frequency switching and synchronous applications, including DC/DC converters. Key features include reliable and rugged construction, fast switching speed, and availability as a green device with 100% EAS

Product OverviewThe ME6968ED Dual N-Channel logic enhancement mode power field effect transistors utilize high cell density, DMOS trench technology, optimized for minimal on-state resistance. These devices are ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package. They offer super high density cell design

Product OverviewThe TN5325 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET utilizing a vertical DMOS structure and silicon gate manufacturing. It offers the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for switching and amplifying applications requiring low threshold voltage, high breakdown voltage,

MEM4N60 N-CHANNEL POWER MOSFET The MEM4N60 is a high-voltage, high-speed N-channel Power MOSFET designed for switching regulator and general switching applications. It offers features such as low CRSS and fast switching capabilities. Product Attributes Brand: Microne Origin: www.microne.com.cn Technical Specifications Parameter Symbol Test Condition Min Type Max Unit General Specifications Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current (TA=25) ID

Product Overview The MPF13N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 13A, and a low on-resistance of 0.60 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss and fast switching speeds, making it suitable for applications such as adapters, LCD panel power supplies, E-bike chargers, and switching mode power supplies. It is 100%

Product OverviewThe MLS60R380D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design minimizes conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS-KXPackage: TO-252Certifications: 100% avalanche testedTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVDSSDrain-to-Source

Product Overview This dual N-channel MOSFET features a high-density cell design for low RDS(ON), offering voltage-controlled small-signal switching. It meets UL 94V-0 flammability rating, is Moisture Sensitivity Level 1, and is a Halogen-Free ('Green') and Lead-Free RoHS Compliant device. The MOSFET is ESD protected up to 2KV (HBM) and operates within a junction temperature range of -55C to +150C, with a storage temperature range of -55C to +150C. Product Attributes Brand: