Single FETs, MOSFETs

Product Overview The MSA003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 110V drain-source voltage and a continuous drain current of 181A at 25C. It features an excellent RDS(on) of 3.1m (Typ.) at VGS = 10V and low gate charge, making it suitable for load switching, PWM applications, and power management. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant. Product Attributes Brand: Miracle Technology Co.

Product Overview The HE3 is a voltage-controlled small signal switch designed with a high-density cell structure for low RDS(ON). This AEC-Q101 qualified device features a Halogen Free, Green Device designation and meets UL 94 V-0 flammability rating. It is Moisture Sensitivity Level 1 compliant and Lead Free/RoHS Compliant. The HE3 is suitable for applications requiring a reliable and efficient switching solution. Product Attributes Brand: MCCSEMI Qualification: AEC-Q101

Product Overview The MCQ4503B is a dual N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET Technology and a high-density cell design for low RDS(on) and high-speed switching. This product is Halogen Free, meets UL 94 V-0 flammability rating, and is Lead Free/RoHS Compliant. It is designed for applications requiring efficient power management and fast switching characteristics. Product Attributes Brand: MCCSEMI Technology: Trench Power LV MOSFET Certifications:

Product OverviewThe MPT065N08P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy ruggedness, making it ideal for demanding applications such as motor drivers and high-speed switching.Product AttributesBrand: MNS (implied from www.mns-kx.com)Certifications: RoHS productTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @

Product Overview The SI2303 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering extremely low RDS(ON). It is rugged, reliable, and available in a SOT-23 package. This lead-free product meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1. Halogen-free options are available upon request. Product Attributes Brand: Micro Commercial Components (MCC) Package: SOT-23 Certifications: UL 94 V-0 flammability

Product Overview The MCCSEMI N-Channel MOSFET, model BSS123, is a voltage-controlled small signal switch designed with a high-density cell structure for extremely low RDS(ON). It is suitable for surface mount applications and meets UL 94 V-0 flammability rating. This device is Halogen Free and RoHS Compliant, operating within a temperature range of -55C to +150C. It is ideal for applications requiring efficient switching and low on-resistance. Product Attributes Brand:

Product OverviewThe APT28M120B2 and APT28M120L are high-speed, high-voltage N-channel switch-mode power MOSFETs from Microsemi's Power MOS 8 family. Featuring a proprietary planar stripe design for enhanced reliability and manufacturability, these MOSFETs offer low switching losses due to low input capacitance and ultra-low Crss. The integrated gate resistance and capacitance control slew rates, ensuring low EMI and reliable paralleling. Their high avalanche energy capability

Product OverviewThe IRF9540 is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapter/charger designs, offering low ON resistance and low reverse transfer capacitances.Product AttributesBrand: MNS (implied by www.mns-kx.com)Material: SiliconPackage: TO-220Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitsAbsolute Maximum

Product Overview The MCQ4503A is a Dual N&P-Channel MOSFET in a SOP-8 package, designed for various electronic applications. It features a lead-free finish and is RoHS compliant, with an option for halogen-free availability. The epoxy material meets UL 94 V-0 flammability rating, and it has a Moisture Sensitivity Level 1. This MOSFET is suitable for applications requiring reliable performance with operating and storage temperature ranges of -55C to +150C. Product Attributes

Product Overview The SI3407HE3 is a P-channel MOSFET designed for various applications. It features an epoxy that meets UL 94 V-0 flammability rating, AEC-Q101 qualification, and is Moisture Sensitivity Level 1 compliant. This device is also Halogen Free and RoHS Compliant, designated by the "P" suffix. It operates within a wide temperature range and offers reliable performance with specified electrical and dynamic characteristics. Product Attributes Brand: MCCSEMI Model:

Product Overview The MPC10N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 10A, and a typical on-resistance of 0.80 at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is suitable for use in adapters, LCD/PDP adapters, and E-bike chargers. Product Attributes Brand: Miracle Technology Co.,

Product OverviewThe ME60N04 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converters requiring low in-line power loss. Key features include extremely low RDS(ON) and exceptional DC current capability.Product AttributesBrand: Not specifiedOrigin:

Product Overview The MPF18N20A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 200V drain-source voltage, 18A continuous drain current, and a low on-resistance of 0.115 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss, fast switching speeds, and is 100% avalanche tested. Key applications include high-efficiency switch mode power supplies, electronic lamp ballasts based on half

Product OverviewThe MDDG03R04Q is a 30V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. Optimized for minimal on-state resistance and superior switching performance, it features a best-in-class soft body diode. This MOSFET is ideal for synchronous rectification in ATX/Server/Telecom PSUs, motor drives, uninterruptible power supplies, and micro solar inverters. It boasts an extremely low Max RDS

Product OverviewThe M2M-0030-120K is a Silicon Carbide Power MOSFET designed for N-Channel Enhancement Mode operation. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness and compliance with Halogen Free and RoHS standards make it suitable for applications demanding higher system efficiency, reduced cooling requirements, increased power density, and higher

Product Overview The MCAC80N10Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology for high-speed switching. This device is designed for applications requiring efficient power management and fast response times. It is Moisture Sensitivity Level 1, Halogen Free ('Green' Device), and its epoxy meets UL 94 V-0 flammability rating. The lead-free finish and RoHS compliance ensure environmental responsibility. This MOSFET is suitable for various industrial and

Supertex LND150 N-Channel Depletion-Mode DMOS FET The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirement, ease of paralleling,

Product Overview The SI2310B is an N-Channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers features such as Lead Free Finish/RoHS Compliant, Epoxy Meets UL 94 V-0 Flammability Rating, and Moisture Sensitivity Level 1. This transistor is suitable for applications requiring a drain-source breakdown voltage of 60V and a continuous drain current of up to 3.0A. Product Attributes Brand: MCCSEMI.COM Package Type: SOT-23 Certifications: RoHS Compliant (P

Product OverviewThe MPT08N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching.Product AttributesBrand: MNS (derived from www.mns-kx.com)Certifications: RoHS productTechnical SpecificationsParameterTest ConditionsMinTypMaxUnitsGeneral

Product OverviewThe MGP066N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers a 100V drain-source voltage, a continuous drain current of 85A, and a low on-state resistance of less than 8.8m (typically 6.6m at VGS=10V). This device boasts 100% EAS guaranteed, fast switching speed, and is available as a green device. It is suitable for applications such as DC/DC converters and high-frequency switching with synchronous rectification.Product Attributes