Single FETs, MOSFETs

Product OverviewThe MDT35N06L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-252

Product OverviewThe IRF840 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key features include a high breakdown voltage (VDS=500V), continuous drain current (ID=8A), low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.Product AttributesBrand: mns

Product OverviewThe MGC036N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low RDS(ON) and guaranteed 100% EAS. It is designed for applications such as SMPS Synchronous Rectification, DC/DC Converters, and Or-ing.Product AttributesBrand: MegainProduct Code: MGC036N04LGreen Device Available: YesTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitsVDSDrain-Source VoltageVGS=0V, ID=250uA40--VRDS(ON)Drain-Source On-state ResistanceVGS

Product DescriptionThe MPT035N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNS (derived from www.mns-kx.com)Certifications: RoHSTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @VGS

Product Overview The SI2310AHE3 is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features AEC-Q101 Qualification, Lead Free Finish/RoHS Compliance, and meets UL 94 V-0 Flammability Rating. This device is also Moisture Sensitivity Level 1 and Halogen Free. Key electrical characteristics include a Drain-Source Breakdown Voltage of 60V, a continuous Drain Current (ID) of 3.0A, and a Pulsed Drain Current (IDM) of 10A. The transistor

Product OverviewThe IRFP460 is a silicon N-Channel Enhanced Power MOSFET, engineered with advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications requiring high-frequency switching, such as SMPS (Switching Mode Power Supplies) and general-purpose power electronics.Product AttributesBrand: mns-kx.com (Shenzhen Minos)Material: Silicon N-ChannelCertifications: RoHS productPackage:

Product OverviewThe MDD4N65F/MDD4N65P/MDD4N65D is a 650V N-Channel Enhancement Mode MOSFET offering ultra low gate charge, low reverse transfer capacitance, and fast switching capability. It is avalanche energy tested and features improved dv/dt capability for high ruggedness. This MOSFET is ideal for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMate

Product OverviewThe ME50N75T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management, DC/DC converters, and load switch applications.Product AttributesBrand: ME (implied by product name)Origin: Not specifiedMaterial: Not specifiedColor: Not specified

MPG120N06 60V N-Channel Power MOSFET The MPG120N06 is an N-Channel Power MOSFET utilizing advanced trench technology. This design provides excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and

Product OverviewThe IRFB7545-MNS is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.Product

Product OverviewThe MGP060N06L is an N-Channel Enhancement Mode MOSFET designed for reliable and rugged performance. It features fast switching speeds and is ROHS Compliant & Halogen-Free, with 100% UIS and Rg tested. This MOSFET is ideal for switching and synchronous rectification applications, including BLDC motors.Product AttributesBrand: MGPPackage Type: TO-220-3LCertifications: ROHS Compliant & Halogen-FreeTesting: 100% UIS and Rg TestedTechnical SpecificationsPart

Product OverviewThe IRFB3607 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower RDS(ON), and fully characterized avalanche voltage and current for good stability and

Product Overview The MCQ4406A is an N-channel Power LV MOSFET featuring Trench technology, designed for high efficiency and reliability. It is Halogen Free and RoHS Compliant, meeting stringent environmental standards. This MOSFET is suitable for applications requiring a -55C to +150C operating junction temperature range and offers excellent thermal performance with a Junction to Ambient thermal resistance of 50C/W. Its construction meets UL 94 V-0 flammability rating, making

Product OverviewThe ME8205E is a Dual N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.Product AttributesBrand: Not

Product OverviewThe MGH038N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS Guaranteed. It is designed for high-frequency switching and synchronous rectification applications, including motor drivers and Battery Management Systems (BMS). This green device is available in a TO263 package.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Green Device

Product OverviewThe TN2540 is a low-threshold, enhancement-mode (normally-off) N-Channel Vertical DMOS FET from Supertex, utilizing a silicon-gate manufacturing process. This device offers the power handling capabilities of bipolar transistors combined with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold

Product OverviewThe MEM2302XG Series is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications and offers low power dissipation in a very small outline surface mount package. Key features include a 20V/3A rating, low RDS(ON) values at various gate-source voltages, a high-density cell design for ultra-low on-resistance, and a

Product Overview The MSA004B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with advanced trench technology, this MOSFET offers excellent RDS(on) and low gate charge, making it ideal for load switch, PWM applications, and power management. It is 100% EAS guaranteed and designed for high-performance switching applications. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Enhancement Mode MOSFET Technology:

Product OverviewThe MDT13N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 100V, ID of 13A, RDS(ON) < 120m @ VGS=10V, high-density cell design, and fully characterized avalanche voltage and current for good stability and

Product Overview The SI3134KL3 is an N-Channel MOSFET designed for low logic level gate drive applications. It features a low RDS(on) as an N-Channel switch and meets UL 94 V-0 flammability rating. This component is Moisture Sensitivity Level 1 and is Halogen Free available upon request. It is lead-free and RoHS compliant. The device operates within a junction temperature range of -55C to +150C. Product Attributes Brand: MCC SEMI Model: SI3134KL3 Flammability Rating: UL 94 V