Single FETs, MOSFETs

Product OverviewThe IRFB4110 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower RDS(ON), and fully characterized avalanche voltage and current for good stability and uniformity

Product OverviewThe BSS84 is a -60V P-Channel Enhancement Mode MOSFET designed with Trench Power LV MOSFET technology. It offers low RDS(ON) and low Gate Charge, making it suitable for applications such as video monitors and power management. Its features include a compact SOT-23 package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUni

Product Overview The MCU18P10Y is a P-CHANNEL MOSFET from MCCSEMI, engineered with Split Gate Trench MOSFET Technology. It offers low RDS(on) & FOM, excellent stability and uniformity, and extremely low switching loss. This MOSFET is designed for a wide operating junction temperature range of -55C to +150C and meets UL 94 V-0 flammability rating. It is available in a Lead Free Finish/RoHS Compliant version, with a Halogen Free option available upon request by adding the "-HF"

Product DescriptionThe MDT20N06 is an N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high

Product DescriptionThe MPT036N10P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction loss, enhances switching performance, and improves avalanche energy. It is an ideal device for motor drivers and high-speed switching applications, offering benefits such as low on-resistance, fast switching, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS

Product DescriptionThe IRFP9240 is a silicon P-channel Enhanced MOSFET utilizing advanced MOSFET technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is well-suited for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.Key CharacteristicsFast SwitchingLow Crss100% avalanche testedImproved dv/dt capabilityRoHS productApplicationsHigh frequency

Product OverviewThe MDD3407 is a -30V P-Channel Enhancement Mode MOSFET designed for various switching and power management applications. It features low on-resistance, logic-level control, and is suitable for high-speed line drivers, load switches, and general-purpose switching circuits. The device is available in a compact SOT-23 package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnic

Product OverviewThis 20V N-channel MOSFET is a dual die type designed for low RDS(on) and fast switching characteristics. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. Ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.Product AttributesBrand: MDDOrigin: ShenzhenProduct Line: Dual 20V N-Channel Enhancemen

Product OverviewThe MPG30N10P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, good stability and uniformity, and an excellent

Product OverviewThe MD200N08 is a Silicon N-Channel Power MOSFET featuring advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good

Product Overview The BSS84 is a P-CHANNEL MOSFET designed for high-density cell applications, offering ultra-low RDS(on). It features a rugged and reliable construction, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is available in a lead-free finish and is RoHS compliant. It is suitable for various applications requiring efficient power switching. Product Attributes Brand: MCC SEMI Model: BSS84 Package: SOT-23 Flammability Rating: UL 94

Product OverviewThe MDDG10R08D is a 100V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for minimal on-state resistance and superior switching performance, featuring a best-in-class soft body diode. It is designed for applications such as synchronous rectification for AC/DC quick chargers, motor drives, uninterruptible power supplies, micro solar inverters, and battery

Product DescriptionThe MDT100N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity

Product OverviewThe Supertex VN2406 is an N-Channel Enhancement-Mode Vertical DMOS FET utilizing a silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it suitable for various switching and amplifying applications requiring low threshold voltage, high

Product OverviewThe MGP089N10N is an N-Channel Enhancement Mode MOSFET designed for applications requiring fast switching speeds, reliability, and ruggedness. It is ROHS Compliant & Halogen-Free and 100% UIS Tested, making it suitable for motor drivers and DC-DC converters.Product AttributesBrand: MGPCertifications: ROHS Compliant & Halogen-FreeTesting: 100% UIS TestedTechnical SpecificationsPart NumberPackage TypeDrain-Source Voltage (VDSS)Gate-Source Voltage (VGSS

Product OverviewThe MDT25N06L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS

Product Overview The MSA004C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a high voltage rating of 110V and a continuous drain current of 173A at 25C, with a low on-resistance (RDS(on)) of 3.4m (typ.) at VGS = 10V. It features excellent RDS(on) and low gate charge, making it suitable for load switching, PWM applications, and power management. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant. Product

Product OverviewThe TN2106 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET featuring a vertical DMOS structure and a silicon-gate manufacturing process. This device offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally induced secondary breakdown, making it ideal for switching and amplifying applications requiring very low

2506251635_Megain-MGC036N10N_C49242759.pdf

Product OverviewThe MPF10N65 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC). Key features include high voltage and current ratings, low on-resistance, fast switching, and improved dv/dt capability.Product AttributesBrand: MNS (www