Single FETs, MOSFETs

Product OverviewThe MDD2N65F/MDD2N65P/MDD2N65D is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. Key features include ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. It is tested for avalanche energy and is suitable for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.Product AttributesBran

Product OverviewThe MPT052N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy, making it ideal for demanding applications such as motor drivers and high-speed switching.Product AttributesBrand: MNS-KX (Shenzhen Minos)Certifications: RoHSTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsGeneral FeaturesDrain

650V N-Channel Enhancement Mode MOSFET The MDD12N65F/MDD12N65P is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. It features ultra-low gate charge, low reverse transfer capacitance, and fast switching capability, making it ideal for switch mode power supplies, electronic lamp ballasts, and LED power supplies. The device has been avalanche energy tested and offers improved dv/dt capability and high ruggedness. General Features Ultra low

Product OverviewThe IRF1405 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product OverviewThe APT12057B2LL(G) and APT12057LLL(G) are N-Channel enhancement mode power MOSFETs from the Power MOS 7 family. They offer a new generation of low loss, high voltage performance by significantly lowering RDS(ON) and Qg, resulting in reduced conduction and switching losses. These MOSFETs feature an exceptionally fast switching speed due to APT's patented metal gate structure and are available in popular T-MAX or TO-264 packages.Product AttributesBrand:

Product OverviewThe MDD2303 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including load switches, switching circuits, high-speed line drivers, and power management functions. This device offers low RDS(on) at VGS=-10V, logic level control at -5V, and comes in a Pb-free, RoHS compliant SOT23 package.Product AttributesProduct Name: MDD2303Channel Type: P

Product OverviewThis 60V P-channel MOSFET is engineered with MDD's advanced device design, delivering low RDS(ON), rapid switching speeds, and superior avalanche characteristics. It is ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.Product AttributesBrand: MicrodiodeOrigin: Craftsman-Made Consciention ChipModel: MDD02P60ARevision: 2024A0Technical SpecificationsParameterSymbolConditio

Product Overview The 2SK3019 is an N-Channel MOSFET designed for applications requiring low ON-resistance and fast switching speeds. It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request by adding the "-HF" suffix. This device is Lead Free Finish/RoHS Compliant, with the "P" suffix designating RoHS compliance. Product Attributes Brand: MCCSemi Flammability Rating: UL 94 V-0 Moisture Sensitivity

MPC20N65 N-Channel Power MOSFET The MPC20N65 is an N-Channel Power MOSFET manufactured by Miracle Technology Co., Ltd. This component features a high breakdown voltage of 650V and a continuous drain current of 20A. It offers a low on-resistance of 0.40 (typ.) at VGS = 10V, low Crss, and fast switching characteristics. The device is 100% avalanche tested, making it suitable for applications such as adapters, standby power supplies, and switching mode power supplies. Product

Product Overview The MCQ15N10B is an N-Channel Enhancement Mode Field Effect Transistor designed for applications requiring low RDS(on) and excellent switching performance. It features extremely low switching loss, fast switching speeds with soft recovery, and offers exceptional stability and uniformity. This transistor is built with an epoxy that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available as Halogen Free upon request by

Product OverviewThe MD50N50 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances. This device has undergone 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen Minos ()Package: TO-247Technical SpecificationsSym

Product Overview The MJF29N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy-to-control gate switching. It offers a 500V drain-source voltage, 29A continuous drain current, and a low on-resistance of 113m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor

Product OverviewThe MDT20P10D is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability, uniformity, and

Product OverviewThe MPG60NF06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, good stability with high EAS, and an excellent package for

Product Overview This high-density N-Channel MOSFET features an extremely low RDS(ON) and is ESD protected up to 1500V. Designed for reliability, it meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free. The device is RoHS compliant, ensuring environmental responsibility. Its robust design makes it suitable for various electronic applications requiring efficient switching and low power dissipation. Product Attributes Brand: MCC (Micro

Product DescriptionThe MD9N90 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers. Key advantages include low ON resistance and low reverse transfer capacitances.Product AttributesBrand: MNS (mns-kx.com)Origin: Shenzhen, ChinaPackage: TO-3PTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-to-Source

Product OverviewThe BSS138 is a 50V N-Channel Enhancement Mode MOSFET designed for a variety of applications including battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS. It features Trench Power MV MOSFET technology, offering voltage-controlled small signal switching with low input capacitance, fast switching speeds, and low input/output leakage. This device provides a cost-effective solution for voltage-controlled switching needs

Product OverviewThe MP40N30 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS (implied from www.mns-kx.com)Material: Silicon N-ChannelCertifications: RoHS productTechnical SpecificationsParameterMP40N30MD4

Product Overview The MPD04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance of 2.3 (typ.) at VGS = 10V. This MOSFET offers low Crss and fast switching speeds, making it suitable for charger and standby power applications. It is 100% avalanche tested for enhanced reliability. Product Attributes Brand: Miracle Technology

Supertex TP0606 P-Channel Enhancement-Mode Vertical DMOS FET The Supertex TP0606 is a low threshold, P-channel, enhancement-mode (normally-off) transistor utilizing a vertical DMOS structure. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for a wide range of switching and