Single FETs, MOSFETs

Microsemi MSC015SMA070B Silicon Carbide N-Channel Power MOSFET The Microsemi MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon MOSFET and IGBT solutions. Its key features include low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a fast and reliable body diode, and

Product OverviewThe MPG160N04 is a high-performance N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers, offering low ON resistance and low reverse transfer capacitances. The device undergoes 100% single pulse avalanche energy testing for reliability.Product AttributesBrand: MNSOrigin: Shenzhen Minos Technology Co., Ltd.Material: Silicon N

Product OverviewThe MPT075N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for synchronous rectification and high-speed switching applications.Product AttributesBrand: MNSCertifications: RoHSTechnical SpecificationsParameterRatingUnitsConditionsMinTypMaxABSOLUTE RATINGSDrain-Source Voltage (VDSS

Product Overview The MCP75N10Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for fast switching and soft recovery. This halogen-free, "Green" device meets UL 94 V-0 flammability rating and is RoHS compliant. It is suitable for a wide operating junction temperature range of -55C to +150C. Key applications leverage its efficient performance characteristics. Product Attributes Brand: MCC Model: MCP75N10Y Technology: Split Gate Trench MOSFET

Product OverviewThe MGD28N06L is an N-channel MOSFET designed for various power management applications. It features super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. This device is suitable for load switching, PWM applications, and general power management.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Green Device AvailableTe

Product OverviewThe IRFP250N is a 200V N-Channel MOSFET manufactured using advanced MOSFET technology. This technology enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is ideal for applications requiring high-speed switching and general-purpose use, including SMPS and DC-AC inverters.Product AttributesBrand: MNS-KX (implied from URL and contact)Material: Silicon N-ChannelPackage: TO-247Technical SpecificationsP

Product OverviewThe MPT045N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy, making it ideal for demanding applications such as motor drivers and high-speed switching.Product AttributesBrand: MNS-KXCertifications: RoHSTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @ VGS=10V (m)ID @ TC=25C (A)EAS (mJ)PD (W

Product Overview The MPW04NA2 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency applications. It features a 1200V breakdown voltage, 4A continuous drain current, and a low on-resistance of 2.9 (typ.) at VGS = 10V. Key advantages include low on-resistance, fast switching, low gate charge, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as UPS, high-efficiency switch mode power supplies,

Product OverviewThe MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET from Microsemi. It offers enhanced performance over traditional silicon MOSFETs and IGBTs, leading to lower total cost of ownership for high-voltage applications. Key benefits include high efficiency for compact systems, ease of driving and paralleling, improved thermal capabilities, and elimination of external freewheeling diodes. This device is designed for applications such as

Product OverviewThe IRF1407 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide array of applications including power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO

Product Overview The LP0701 is a P-Channel Enhancement-Mode Lateral MOSFET designed for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, and general-purpose line drivers. It features an ultra-low threshold voltage, high input impedance, low input capacitance, fast switching speeds, low on-resistance, and freedom from secondary breakdown. Its MOS structure ensures it is free from thermal runaway and thermally induced

Product Overview The MSE002C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 150V drain-source voltage and a continuous drain current of 130A at 25C, with an exceptionally low on-resistance (RDS(on)) of 5.2m typ. at 10V gate-source voltage. This MOSFET offers excellent RDS(on) and low gate charge, making it ideal for demanding tasks such as motor driving in power tools, e-vehicles, and

Product OverviewThe MPF20N65 is a silicon N-Channel Enhanced Power MOSFET developed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for high-speed switching and general-purpose applications, particularly in Switch Mode Power Supplies (SMPS).Product AttributesBrand: MNS-KXMaterial: Silicon N-ChannelCertifications: RoHS productTechnical SpecificationsPackageProduct CodeContinu

Product OverviewThe M2M-0080-120D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness and compliance with Halogen Free and RoHS standards contribute to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies. This MOSFET is

Product OverviewThe MLS65R580D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design minimizes conduction losses and enhances switching performance, making it ideal for high-speed switching applications like Switch Mode Power Supplies (SMPS) and general-purpose uses.Product AttributesBrand: MNSOrigin: Shenzhen Minos (implied from contact info)Material: Silicon (N-channel Enhanced MOSFET)Color: Not specifiedCertifications: Not

Product Overview The MCQ05P10Y is a P-CHANNEL MOSFET featuring Split Gate Trench MOSFET Technology and a High Density Cell Design for low RDS(ON). It is designed for various applications requiring efficient power switching. This device is Moisture Sensitivity Level 1, Halogen Free (Green Device), and meets UL 94 V-0 flammability rating. It is Lead Free and RoHS Compliant, operating within a junction temperature range of -55C to +150C. Product Attributes Brand: MCCSEMI

Product Overview The MSE001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers excellent RDS(on) and low gate charge, making it ideal for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power supplies, and hard-switched, high-frequency circuits. This component is halogen-free and RoHS-compliant, with 100% EAS guaranteed for reliability. Product Attributes Brand

Product Overview The MU4002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 40A continuous drain current, and a typical on-resistance of 11m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology. It is 100% EAS guaranteed and suitable for applications such as load switching, PWM applications, and power management. Product Attributes Brand: Miracle

Product OverviewThe MPG150N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The

Product OverviewThe TN2540 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It utilizes a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it