Single FETs, MOSFETs

Product Overview The MCP07N65 is an N-Channel MOSFET designed for high current applications. It features a high current rating, an epoxy meeting UL 94 V-0 flammability rating, and Moisture Sensitivity Level 1 compliance. This device is Halogen Free, a Green device, and Lead Free/RoHS Compliant. It is suitable for various industrial applications requiring robust performance and safety compliance. Product Attributes Brand: MCCSEMI Flammability Rating: UL 94 V-0 Moisture

Product Overview The MPF20N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 650V breakdown voltage, a continuous drain current of 20A at 25C, and a low on-resistance of 0.40 (typ.) at VGS = 10V. It features low Crss and fast switching speeds, making it suitable for applications such as adapters, standby power supplies, and switching mode power supplies. The device is 100% avalanche tested. Product Attributes Brand: Miracle Technology Co.

Product Overview The MPD18N20A is a high-performance N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers a robust 200V breakdown voltage and 18A continuous drain current capability. Key features include low Crss for fast switching and 100% avalanche testing for enhanced reliability. This MOSFET is ideal for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge configurations, and

Product DescriptionThe IRFZ44N-MNS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.Product

Product Overview The MS0008Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with advanced Miracle Technology. It offers exceptional performance with a 100V drain-source voltage and a continuous drain current of 79A. Key advantages include low RDS(on) (typically 7.2m at VGS = 10V) and low gate charge, making it ideal for high-frequency switching and synchronous applications. This MOSFET is also Halogen-free and RoHS-compliant, ensuring

Product Overview The MU3020Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 30V drain-source voltage, 130A continuous drain current, and a low on-resistance of 1.5m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM, and power management applications. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd.

Product DescriptionThe MD23N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.Product AttributesBrand: MNS (www.mns-kx.com)Material: Silicon N-ChannelCertifications: RoHS productTechnical SpecificationsSymbolPara

Product Overview The MU4007Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage and a continuous drain current of 190A at 25C, with a low on-resistance of 2.6m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines. It is halogen-free

Mini-Circuits SAV-551+ Ultra Low Noise, Medium Current E-PHEMT Transistor Product Overview The SAV-551+ is an ultra-low noise, high IP3 transistor device manufactured using E-PHEMT* technology, enabling operation with a single positive supply voltage. It offers an outstanding Noise Figure, particularly below 2.5 GHz, and high IP3 performance, making it an ideal amplifier for demanding base station applications. These units can also be supplied assembled into a complete module

MJF30N65F N-Channel Power MOSFET Product Overview The MJF30N65F is an N-Channel Power MOSFET developed by Miracle Technology Co., Ltd. Utilizing advanced Super Junction Technology, this MOSFET offers a 650V drain-source voltage and a continuous drain current of 30A, with a typical on-resistance of 105m at VGS = 10V. It is designed for easy gate switching control and is 100% avalanche tested. Key applications include server power, telecom power, EV charging, solar inverters,

Product Overview The SI3099 is an N-Channel MOSFET featuring Trench LV MOSFET Technology. It offers ESD protection up to 2.5KV (HBM) and is designed to meet stringent industry standards, including Moisture Sensitivity Level 1, Halogen Free (Green Device), and Epoxy Meets UL 94 V-0 Flammability Rating. This device is Lead Free Finish/RoHS Compliant. It is suitable for applications requiring a wide operating temperature range from -55C to +150C. Product Attributes Brand:

Product Overview The MU3013Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management. This MOSFET is guaranteed 100% EAS (Electrical Avalanche Stress) tested, ensuring reliability. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Enhancement Mode MOSFET Technology:

Product OverviewThe MDD4438 is a 60V N-Channel Enhancement Mode MOSFET designed for low RDS(ON) and extremely low switching loss. It offers fast switching and soft recovery, making it ideal for synchronous rectification power systems with low driving voltage. Key applications include battery protection, power management, and switched-mode power supplies.Product AttributesBrand: Microdiode Electronics (Shenzhen)Product Name: MDD4438Device Type: N-Channel Enhancement Mode

Product Overview The MJB11N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is designed for high-voltage applications, offering a 700V drain-source voltage and a continuous drain current of 11A. This MOSFET is 100% avalanche tested and is suitable for use in single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs

Product DescriptionThe MPG190N06 is an N-Channel Power MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. This design enables its use in a wide variety of applications, including power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high

Product OverviewThe MPF4N65 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC). Key features include high voltage capability (VDS=650V), continuous drain current (ID=4A), low Crss, fast switching, and improved dv/dt capability

Product Overview The Mini-Circuits TAV1-331+ is a D-PHEMT MMIC transistor designed for a wide operating frequency range of 10 to 4000 MHz. This device offers a compelling combination of high gain (24.1 dB typ. at 300 MHz) and extremely low noise figure (0.6 dB typ. at 300 MHz), contributing to reduced overall system noise. Its high Output IP3 (+31.8 dBm typ. at 300 MHz) and Output Power at 1dB Compression (+20.1 dBm typ. at 300 MHz), coupled with low current consumption (60mA

MPG90N08 N-Channel Power MOSFETThe MPG90N08 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower RDS(ON), and fully characterized avalanche voltage and current for enhanced stability and uniformity.Product

Product OverviewThe MDD3401 is a -30V P-Channel Enhancement Mode MOSFET designed for load/power switching and interfacing switching applications. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute

Product OverviewThe MDDG06R01L is a 60V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for extremely low on-state resistance, achieving a maximum RDS(on) of 1.5 m at VGS = 10 V, ID = 30 A. It offers superior switching performance with a best-in-class soft body diode and is 100% UIS and dVDS tested. Key applications include PWM, Motor Drives, Uninterruptible Power