Single FETs, MOSFETs

Product OverviewThe TP2104 is a low-threshold, P-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features high input impedance, high gain, low-power drive requirements, and ease of paralleling. Its vertical DMOS structure and silicon-gate manufacturing process provide excellent thermal stability and freedom from secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, analog switches

Product Overview The MPC04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-efficiency applications, it features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance of 2.3 (typ.) at VGS = 10V. This MOSFET offers fast switching characteristics, low Crss, and is 100% avalanche tested, making it suitable for chargers and standby power supplies. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type:

Product Overview The MU4003X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 30A continuous drain current, and a low RDS(on) of 7.4m (Typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is halogen-free and RoHS-compliant, making it suitable for applications such as load switches, PWM applications, and power management. Product Attributes Brand: Miracle

Product OverviewThe MPF5N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS (derived from www.mns-kx.com)Material: Silicon N-ChannelCertifications: RoHS productTechnical SpecificationsParameterValueUnitsConditionsGener

MJF28N60 N-Channel Power MOSFET Product Overview The MJF28N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with advanced Super Junction Technology. It offers a robust 600V breakdown voltage and a continuous drain current of 28A, with a low on-resistance of 120m (typ.) at VGS = 10V. This MOSFET is easy to control for gate switching and is 100% avalanche tested, making it suitable for demanding applications in PC power supplies, server power, telecom

MPQ50N25 N-Channel Power MOSFET The MPQ50N25 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance power switching applications. It features a 250V breakdown voltage, a continuous drain current of 50A, and a low on-resistance of 54m (typ.) at 10V VGS. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power

Product DescriptionThe D90N25-MNS is a silicon N-channel Enhanced Power MOSFET utilizing advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications requiring high-speed switching and general-purpose use, particularly in Switched-Mode Power Supplies (SMPS).Product AttributesBrand: MNSMaterial: Silicon N-ChannelCertifications: RoHS productPackage: TO-247Technical Specifications

Product Overview The MDD7N60F is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It features ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridges, and LED power supplies. Product Attributes Brand: Microdiode Electronics (Shenzhen

Product OverviewThe IRFP450 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, offering low ON resistance and low reverse transfer capacitances. This MOSFET is 100% tested for single pulse avalanche energy.Product AttributesBrand: MNS (implied from www.mns-kx.com)Origin: China (implied from contact information)Material: Silicon N-ChannelTechnical SpecificationsParameterTes

Product Overview The MSJ001B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with advanced MOSFET technology, it offers exceptional performance with a 200V breakdown voltage and a continuous drain current of 109A at 25C, featuring a low on-resistance of 8.6m (typ.) at VGS = 10V. This device is designed for high-efficiency applications, boasting excellent RDS(on) and low gate charge, making it ideal for motor driving in power tools, e

Product Overview The MPF04N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 700V drain-source voltage, a continuous drain current of 4A, and a low on-resistance of 2.7 (typ.) at 10V VGS. This MOSFET offers low gate charge, fast switching speeds, and is 100% tested for single pulse avalanche energy, making it suitable for efficient power conversion applications. Product Attributes

Product OverviewThe 2N7002KDW is an N-Channel Enhancement Mode MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. This rugged and reliable MOSFET offers high saturation current capability and ESD protection, making it suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: microdiode.comPackage: SOT-363 Plastic OutlineMaterial: Epoxy UL: 94V-0Mounting

Product Overview The MJF20N65 is an N-Channel Power MOSFET manufactured by Miracle Technology Co., Ltd. Utilizing advanced Super Junction Technology, this MOSFET offers 650V breakdown voltage and 20A continuous drain current with a typical on-resistance of 0.19 at VGS = 10V. It is designed for easy gate switching control and operates in enhancement mode, featuring a gate threshold voltage (VGS(th)) between 2.8V and 4.2V. This component is well-suited for applications such as

Product DescriptionThe MP18N20 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose uses.Product AttributesBrand: MNS (Shenzhen Minos)Origin: China (Shenzhen)Material: SiliconCertifications: RoHSTechnical SpecificationsParameterMP18N20 (TO-220

Product DescriptionThe MPG80N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its key advantages include high ESD capability, high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and

Product OverviewThe MLS65R580P is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction loss and enhances switching performance, making it an ideal component for high-speed switching applications. It is well-suited for use in Switch Mode Power Supplies (SMPS) and general-purpose applications.Product AttributesBrand: MNSPackage: TO-220FOrigin: Shenzhen, China (implied by contact information)Technical

Product Overview The MSE003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This high-performance MOSFET offers a 150V breakdown voltage and a continuous drain current of 200A, with a typical RDS(on) of 3.8m at VGS = 10V. It features excellent RDS(on) and low gate charge, making it suitable for applications requiring high efficiency and speed. The device is Halogen-free and RoHS-compliant, with 100% EAS guaranteed. Ideal for Uninterruptible Power

Product DescriptionThe MPG100N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. This design provides excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including motor control and drive, battery management, and Uninterruptible Power Supplies (UPS). Key features include extremely low on-resistance, an excellent Qg x RDS(on) product (FOM), and qualification according to JEDEC criteria. The device is 100% DVDS and

Product Overview The MU3020D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 30V drain-source voltage and 190A continuous drain current with a typical RDS(on) of 1.9m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM, and power management applications. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd.

Product OverviewThe K2837-MNS is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications requiring high-speed switching.Product AttributesBrand: MNS (Shenzhen Minos)Material: Silicon N-ChannelCertifications: RoHS productPackage: TO-3PTechnical SpecificationsParameter