Single FETs, MOSFETs

Product Overview The MSE003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 150V drain-source voltage and a continuous drain current of 263A at 25C, with a low on-resistance of 3.3m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteed 100% EAS. It is suitable for motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC & AC/DC (SR)

Product Overview The SI3404 is an N-Channel MOSFET designed with a high-density cell structure for extremely low RDS(on). It offers a rugged and reliable performance, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is available in a lead-free finish and is RoHS compliant. For environmental considerations, a halogen-free option is available upon request. Product Attributes Brand: MCC (Micro Commercial Components) Product Series: SI3404

Product OverviewThe Supertex VP3203 is a low threshold, P-Channel, enhancement-mode Vertical DMOS FET that utilizes a silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for a wide range of switching and amplifying applications requiring low threshold voltage,

Product Overview MJD08N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. It offers a 650V drain-source voltage, 8A continuous drain current, and a typical on-resistance of 0.50 at VGS = 10V. Designed for easy gate switching control and 100% avalanche tested, this MOSFET is suitable for applications such as PD adaptors, LCD & PDP TVs, LED lighting, and in boost PFC switch, single-ended flyback, or two-transistor

Product OverviewThis N-Channel MOSFET, utilizing MDD Semiconductor's advanced Power Trench process technology, is optimized for minimal on-state resistance and superior switching performance. It features a best-in-class soft body diode and is Pb-free plated. Ideal for load switches, PWM applications, DC-DC converters, and power management systems.Product AttributesBrand: MDD SemiconductorOrigin: ShenzhenMaterial: Advanced Power Trench process technologyCertifications: Pb-free

Product Overview The MPD05N50B is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component features a 500V drain-source voltage, a continuous drain current of 5A at 25C, and a low on-resistance of 2.0 typ. at VGS = 10V. It is designed for fast switching applications and is 100% avalanche tested. Key applications include adaptors, standby power supplies, switching power supplies, and LED power solutions. Product Attributes Brand: Miracle Technology Co., Ltd.

Product OverviewThe MDT15P04D is a Silicon P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of -40V, continuous ID of -15A, and low RDS(ON) values of < 35m @ VGS=-10V and < 45m @ VGS=-4.5V. Its high-density cell design contributes to

Product Overview The MPF18N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 500V drain-source voltage, 18A continuous drain current, and a low on-resistance of 0.27 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for adapters, DC-AC power converters, and switching power supplies. Product Attributes Brand: Miracle Technology Co.,

Product DescriptionThe MD20N60 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for SMPS, high-speed switching, and general-purpose applications.Product AttributesBrand: MNS (implied by www.mns-kx.com)Origin: Shenzhen, China (implied by contact information)Certifications: RoHS productTechnical SpecificationsParameterValueUnitTO-3PN

Product Overview The MU0003D is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers robust performance with a drain-source voltage of -100V and a continuous drain current of -20A. Key features include low gate charge, high UIS and DVDS testing, and a lead-free product acquisition. It is ideally suited for applications such as load switching, PWM applications, and power management. Product Attributes Brand: Miracle Technology Co., Ltd.

Product Overview The MJQ80N65F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is designed for high-efficiency applications, including soft switching boost PFC, HB or AHB or LLC half bridge and full bridge topologies, phase-shift-bridge (ZVS), and LLC applications. This MOSFET is suitable for server power, telecom power, EV charging, and solar inverters, offering robust performanc

Product OverviewThe IRF540N-MNS is a 100V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product OverviewThe MGP040N10N is a product from Megain, indicated by Rev.1.0. Further details regarding its function, usage, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelSpec 1Spec 2Spec 3Spec 4Spec 5Spec 6Spec 7Spec 8Spec 9MGP040N10N2506251635_Megain-MGP040N10N_C49242755.pdf

Product DescriptionThe IRF9540NS is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapter/charger circuits. Key features include a high voltage rating (VDS=-110V), significant current handling capability (ID=-35A), low ON resistance, and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing

Product OverviewThe MPT180N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNS-KXCertifications: RoHSTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @VGS=10V (m)ID @TC=25C (A

Product Overview The MS0007Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This reliable and rugged component features fast switching speeds and is available as a green device, with 100% EAS guaranteed. It is ideally suited for high-frequency switching, synchronous rectification, and DC/DC converter applications. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: N-Channel Enhancement Mode MOSFET Green Device Available: Yes EAS

Product OverviewThe MDT20P04D is a Silicon P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, ChinaMaterial: SiliconTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum

Product OverviewThe MEM2303M3G is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications, offering low power dissipation in a very small outline surface mount package. It is ideal for power management, load switching, and battery protection circuits.Product AttributesBrand: MicroneOrigin: ChinaSeries: MEM2303M3GTechnical Specificati

Product OverviewThe IRFR120NTR is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product OverviewThe IRFB4227 is a Silicon N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON). It is suitable for a wide range of power switching and load switch applications.Product AttributesBrand: SHENZHEN MINOS TECHNOLOGY CO.,LTDOrigin: ChinaModel: IRFB4227Package: TO-220EWTechnical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitVDSDrain-to-Source Breakdown Voltage200220VIDDrain Current (continuous)at Tc=2565AIDMDrain Current