Single FETs, MOSFETs

Product OverviewThe MEM12N65 is an N-CHANNEL POWER MOSFET designed for switching regulator and general switching applications. It offers high voltage and high speed capabilities with features such as low CRSS and fast switching. This MOSFET is suitable for various switching applications.Product AttributesBrand: MICRONEOrigin: www.microne.com.cnTechnical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitGeneral DescriptionDrain-Source VoltageVDSS650VGate-Source

Product OverviewThe MPG15N10P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower RDS(ON), a fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Silicon N-Channel Power MOSFET - IRFP4468The IRFP4468 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is specifically designed for high-current switching applications and Battery Management Systems (BMS).Product AttributesBrand: MNS-KXProduct Code: IRFP4468Package: TO-247Certifications: RoHS productTechnical Specificatio

Product DescriptionThe MD40N25 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal component for Switch Mode Power Supplies (SMPS), high-speed switching applications, and general-purpose electronic designs.Product AttributesBrand: MNS (mns-kx.com)Material: Silicon N-Channel Enhanced MOSFETCertifications:

Product Overview The MCG20N08 is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for efficient power management. It offers a low thermal resistance and operates within a wide temperature range of -55C to +150C. This MOSFET meets UL 94 V-0 flammability rating and is available in a lead-free finish, with a halogen-free option upon request. Its robust design and high performance make it suitable for various industrial applications requiring reliable

Product Overview The MU0004D is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers a breakdown voltage of -100V and a continuous drain current of -7A, with a typical on-resistance (RDS(on)) of 304m at VGS = -10V. It features low gate charge and is 100% UIS and DVDS tested. The MU0004D is suitable for applications such as load switching, PWM applications, and power management. It is also available in a lead-free product option. Product

Product OverviewThe MGP054N08N is a product from Megain, as indicated by the provided text. Further details regarding its function, usage, advantages, and application scenarios are not explicitly stated in the input.Product AttributesBrand: MegainTechnical SpecificationsModelSpecification 1Specification 2MGP054N08NRev.1.02506251635_Megain-MGP054N08N_C49242756.pdf

MS0009C N-Channel Enhancement Mode MOSFET Product Overview The MS0009C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a 100V drain-source voltage rating and a continuous drain current of 135A at 25C, with a low on-resistance of 4.5m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it ideal for load switch, PWM applications, and power

Product DescriptionThe MP40N20 is a 200V N-Channel Enhanced MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include proprietary new planar technology, low on-resistance (RDS(ON) typ.=50m@VGS=10V), minimized switching loss due to low gate charge, and a fast

Product Overview The MCT04P06 is a P-Channel MOSFET designed for various applications. It features a lead-free finish and is RoHS compliant, with an epoxy meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. Halogen-free options are available upon request. This MOSFET operates within a junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C, with a thermal resistance of 62.5C/W (Junction to Ambient). It is suitable for

Product OverviewThe APT13F120B and APT13F120S are N-Channel FREDFET Power MOSFETs designed for high-speed switching applications. These devices feature optimized drain-source diodes with reduced reverse recovery time (trr) and soft recovery for enhanced reliability in ZVS phase-shifted bridge and other power converter circuits. Key advantages include low gate charge, high gain, excellent noise immunity due to a reduced Crss/Ciss ratio, and avalanche energy rating. The

Product OverviewThe P75NF75 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include high ESD capability, high density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and

Product OverviewThe MP5N50 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications including power switching, adapters, and chargers. Key features include a VDS of 500V, ID of 5A, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, China ()Material: Silicon N-Channel

Product OverviewThe MDD3404 is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitElectrical CharacteristicsV(BR)DSSVGS

Product OverviewThe MPG4227 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of applications, including power switching and load switching, offering low ON resistance, low reverse transfer capacitances, and 100% Single Pulse avalanche energy testing.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos (Shenzhen, China)Package: TO-220, TO-220EWCertifications: Not specifiedMateri

Product OverviewThe MDD13N50F is a 500V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for use in electronic ballasts, switched-mode power supplies, and UPS systems.Product AttributesProduct Name: MDD13N50FPackage Type: TO-220F-3LCertifications: RoHS compliantTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source

Product OverviewThe MDD2305 is a -20V P-Channel Enhancement Mode MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power handling with low on-resistance characteristics.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250A-20----VGate-Source

Product Overview The MU6888B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a 68V drain-source voltage, 88A continuous drain current, and a low typical on-resistance of 6.0m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as Load Switches, PWM applications, and Power Management, providing

Product Overview The MU6001T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 60V drain-source voltage, a continuous drain current of 320mA, and a low on-resistance of 2.2 (typ.) at VGS = 10V. This MOSFET offers very low leakage current in the off condition and is ESD protected up to 2KV HBM. It is suitable for power switching applications, hard switched, and high-frequency circuits. Product Attributes Brand: Miracle Technology Co., Ltd.

Product OverviewThe MLS65R190W is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and improves switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key characteristics include a VDS of 650V, an ID of 20A, and an RDS(ON) of less than 0.23 at VGS=10V.Product AttributesBrand: MNS-KX (Shenzhen Minos)Package: TO