Single FETs, MOSFETs

Product Overview This Trench MV MOSFET technology offers a low gate threshold voltage, making it suitable for various applications. It is designed with Moisture Sensitivity Level 1 and is Halogen Free, qualifying as a Green Device. The product meets UL 94 V-0 flammability rating and is Lead Free/RoHS Compliant. It operates within a junction temperature range of -55C to +150C and has a low thermal resistance of 625C/W Junction to Ambient. Product Attributes Brand: MCC SEMI

Product OverviewThe MGC070N06L is a product from Megain, designed for various applications. Further details on its specific function, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainModel: MGC070N06LTechnical SpecificationsParameterValueTemperature Range (C)Refer to datasheet for specific operating and storage temperature ranges. The text indicates presence of temperature-related specifications.Other

Product Overview The MSE002L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 150V drain-source voltage and 130A continuous drain current, with a low typical on-resistance of 5.0m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for demanding applications. It is halogen-free and RoHS compliant, with 100% EAS guaranteed. Applications include motor driving in power tools, e-vehicles, and robotics,

Product OverviewThe TC6320 is a high-voltage, low-threshold N-channel and P-channel MOSFET pair designed for high-voltage pulser applications. It features integrated gate-to-source resistors and Zener diode clamps, offering a complimentary, high-speed, high-voltage solution. Utilizing an advanced vertical DMOS structure, it provides the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free

Product OverviewThe MLS65R380P is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include a VDS of 650V, ID of 11A, and RDS(ON) < 0.33 at VGS=10V. It is 100% avalanche tested and offers improved dv/dt capability.Product AttributesBran

Product Overview The SI3134KL3A is an N-Channel MOSFET designed for low logic level gate drive applications. It features a low RDS(on) for efficient switching and is built to meet stringent industry standards, including UL 94 V-0 flammability rating, 2000V ESD Human Body Model protection, and Moisture Sensitivity Level 1. This device is Halogen Free, a "Green" device, and Lead Free/RoHS Compliant, making it suitable for environmentally conscious designs. It operates within a

Product OverviewThe MDT50N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO

Product Overview The MU6888D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 68V drain-source voltage and a continuous drain current of 88A, with a low on-resistance (RDS(on)) of 6.0m (Typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switching, PWM applications, and power management. It is 100% EAS guaranteed and complies with RoHS

Product OverviewThe MPG200N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product OverviewThe MGV022N14N is a high-performance N-channel MOSFET designed for demanding applications. It features low on-state resistance (RDS(ON)), low gate charge, and low thermal resistance, making it highly efficient. The device is 100% avalanche tested and offers excellent decline in CdV/dt effect. It is ideal for load switching, battery protection, and use in UPS and energy inverters.Product AttributesBrand: MegainModel: MGV022N14NPackage Type: TOLLOrdering

Product OverviewThe MDD2310 is a 60V N-Channel Enhancement Mode MOSFET designed for high power and current handling capabilities. It features a lead-free, surface-mount SOT-23 package, making it suitable for various electronic applications. This MOSFET offers advantages such as a compact form factor and reliable performance.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Lead free product is acquiredTechnic

Product DescriptionThe MP9N20 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNSOrigin: Shenzhen Minos Technology Co., Ltd.Material: Silicon N-ChannelCertifications: RoHSTechnical SpecificationsParam

Product Overview The SIL2301 is a Dual P-Channel MOSFET featuring TrenchFET Power MOSFET technology. It is designed to meet UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This MOSFET is Halogen Free available upon request by adding the "-HF" suffix and Lead Free/RoHS Compliant, indicated by the "P" suffix. It offers robust performance with a maximum continuous drain current of 8A and a drain-source voltage rating of -20V. Product Attributes Brand

Product Overview The MJF08N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It boasts a 700V breakdown voltage and an 8A continuous drain current with a low typ. RDS(ON) of 0.54 at VGS = 10V. This device is 100% avalanche tested and is suitable for applications such as PD adaptors, LED lighting, LCD & PDP TVs, and single-ended flyback or two-transistor forward topologies. Product

Product Overview The MS8001B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features high performance with an 85V drain-source voltage and 120A continuous drain current. This MOSFET offers low on-resistance (RDS(ON) of 4.3m typ. at VGS = 10V), fast switching speeds, high avalanche ruggedness, and excellent gate charge characteristics. It is ideally suited for applications such as motor drivers, general switching applications, and current

Product Overview The SI2310 is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features lead-free, RoHS compliant construction and meets UL 94 V-0 flammability rating. The device exhibits excellent thermal performance with a maximum operating junction temperature of +150C and a low thermal resistance. It is suitable for applications requiring efficient power handling and switching capabilities. Product Attributes Brand: MCCSEMI

N-Channel MOSFET MEM2306The MEM2306 is a dual N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance, making it suitable for low voltage applications and low power dissipation. Key advantages include ultra-low on-resistance and a surface mount SOP8 package. This device is ideal for battery management, power management, portable equipment, low power DC to DC converters, load switches

Product OverviewThe MDT80N06D is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity

Product OverviewThe TN2435 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET utilizing a vertical DMOS structure and a silicon-gate manufacturing process. It offers the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it suitable for a wide range of switching and amplifying applications requiring low

Product OverviewThe MLS65R190F is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include a VDS of 650V, ID of 20A, and RDS(ON) of less than 0.23 at VGS=10V.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaMaterial: SiliconPackag