Single FETs, MOSFETs
LRC S LPB8413DT0AG P Channel MOSFET Featuring Low RDS on Trench Technology and Halogen Free Material
Product Overview The S-LPB8413DT0AG is a P-Channel 40-V (D-S) MOSFET designed for load switch applications, DC/DC conversion, and motor drives. It features low RDS(on) trench technology and low thermal impedance, contributing to fast switching speeds. This device is RoHS compliant and Halogen Free. ...
TO247 package MOSFET MASPOWER MS25N100HCC0 offering 25A continuous current and low Crss for switching
Product OverviewThe MS25N100HCC0 H1.02 from Maspower is a high-performance power semiconductor designed for demanding switching applications. It features a high breakdown voltage (VDS=1000V) and a continuous drain current of 25A, with low Crss and low gate charge for improved efficiency. Its ...
Low Threshold Voltage N Channel MOSFET LRC LSI1012N3T5G Suitable for High Speed Switching and Load Power Applications
Product Overview The LSI1012N3T5G and S-LSI1012N3T5G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. These devices feature a low on-resistance of 0.7, low threshold voltage of 0.8V (typ), and fast switching speeds of 10 ns, making them suitable for low-voltage ...
Super Junction Power MOSFET MCC MSJPF06N80A BP with 6A Continuous Drain Current and Halogen Free option
Product Overview The MSJPF06N80A is an N-CHANNEL Super-Junction Power MOSFET designed for efficient power management. It features a very low FOM (RDS(on) Qg), a high Drain-Source Voltage rating of 800V, and a continuous drain current of 6A. This MOSFET is constructed with an epoxy that meets UL 94 V...
Compact P channel power MOSFET MATSUKI ME4413D-G with high cell density and low on state resistance
Product OverviewThe ME4413D is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
Power MOSFET MASPOWER MS4N1350E offering 1500V VDSS and low gate charge for fast switching performance
Product OverviewThe MS4N1350 series is a high-performance MOSFET designed for switching applications. It features a high breakdown voltage of 1500V and a continuous drain current of 4A, with a low on-resistance of less than 7 at VGS=10V. The device is 100% avalanche tested and offers minimized ...
High Voltage MOSFET MASPOWER MS4N1350S with 1500V Breakdown Voltage and 4A Continuous Current Rating
Product OverviewThe MS4N1350 series is a high-performance MOSFET designed for switching applications. It features a high breakdown voltage (VDS=1500V), a continuous drain current of 4A, and low on-resistance (RDS(on)
Fast Switching 60V N Channel MOSFET LRC LN06N060TZHG Compliant with RoHS and Halogen Free Standards
Product Overview The LN06N060TZHG is a 60V N-Channel (D-S) MOSFET designed for load/power switching in portable and computing applications, as well as DC-DC conversion. It features low thermal impedance and fast switching speed. The material of this product complies with RoHS requirements and is ...
P Channel Power MOSFET with 44 Percent Smaller Footprint and Low Threshold Voltage LRC LNTK3043PT5G
Product Overview The LNTK3043PT5G is a P-Channel Power MOSFET from LESHAN RADIO COMPANY, LTD., featuring 20 V, 285 mA ratings and ESD protection. Designed for high-density PCB manufacturing, it offers a 44% smaller footprint and 38% thinner profile than SC-89 packages. Its low voltage drive and low ...
Low Resistance N Channel Transistor MATSUKI ME7170-G Suitable for Notebook Computer Power Management
Product OverviewThe ME7170-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management and ...
Single N Channel Trench MOSFET MagnaChip Semicon MDP14N050TH with MV MOSFET Technology Package TO 220
Product Overview The MDP14N050TH is a single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., representing their latest generation of MV MOSFET Technology. It offers high performance with exceptionally low Rds(on), fast switching capabilities, and excellent quality. This MOSFET is suitable ...
N channel MOSFET MCC SI3134K TP featuring dissipation and UL 94V 0 flammability rating certification
Product Overview The 0SC205HY is a 1-channel N-channel MOSFET designed for low logic level gate drive applications. It features a low RDS(ON), meeting UL 94V-0 flammability rating, and is available in a Halogen-Free option upon request. This MOSFET is RoHS Compliant and Lead-Free finished, suitable ...
100V N Channel Enhancement Mode MOSFET LRC LN2292LT1G with Low On Resistance and High Current Rating
Product Overview The LN2292LT1G is a 100V N-Channel Enhancement-Mode MOSFET from Leshan Radio Company, LTD. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in ...
N Channel Enhancement Mode MOSFET 30V LRC LN2306LT1G with Ultra Low On Resistance SOT23 Package
Product Overview The LN2306LT1G and S-LN2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These devices are RoHS compliant and Halogen Free. The 'S-' prefix variants are qualified for ...
N channel Trench MOSFET MagnaChip Semicon MDP1921TH suitable for power conversion applications
Product OverviewThe MDP1921 is a single N-channel Trench MOSFET from Magnachip Semiconductor Ltd. It leverages advanced MOSFET technology to deliver high performance in on-state resistance and fast switching capabilities, along with excellent quality. This MOSFET is well-suited for DC/DC converter ...
N channel MOS planar transistor MASPOWER MS12N120HGC0 ideal for pulse power and power conversion
Product OverviewThe MS12N120HGC0 is a high-performance N-Channel MOS planar process power transistor from Maspower, designed for high voltage applications. It features an ultra-low RDS(on) due to its high-density cell design, low gate charge, and improved dv/dt capability, making it ideal for ...
Low voltage power management MOSFET MATSUKI ME8107-G P channel 35V ESD protected surface mount device
Product OverviewThe ME8107/ME8107-G is a P-Channel 35V (D-S) ESD Protected MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones and notebook computers, as well as ...
Power Field Effect Transistor Featuring Low RDS ON MATSUKI ME4825 Ideal for Battery Powered Circuits
P-Channel 30-V (D-S) MOSFET ME4825/ME4825-GThe ME4825 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This technology minimizes on-state resistance, making the device suitable for low-voltage applications such as power ...
Dual N Channel Power Field Effect Transistor MATSUKI ME4972 G Suitable for Low Voltage Applications
Product OverviewThe ME4972-G is a Dual N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer ...
Surface Mount N Channel MOSFET LRC LN2312LT1G with Low On Resistance and 2.5V Gate Drive Capability
Product Overview The LN2312LT1G and S-LN2312LT1G are N-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD., designed for high-density cell applications to achieve ultra-low on-resistance. These devices feature advanced trench process technology and are suitable for various applications ...
