Single FETs, MOSFETs

Product Overview The LSI1013XT1G and S-LSI1013XT1G are P-Channel 1.8-V (G-S) MOSFETs designed for high-speed switching applications. These devices feature a fast switching speed of 14 ns, high-side switching capability, and Gate to Source ESD protection up to 2000V. They are RoHS compliant and Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Ideal for use

Product Overview The LRC6N33YT1G is a general-purpose transistor featuring a Power MOSFET. It offers ESD protection up to 1500V and a high current capacity within a compact DFN2020-6D package. Its epitaxial planar type construction and low threshold voltage (0.9V to 1.5V) make it suitable for low voltage applications. This device is compliant with RoHS requirements and Halogen Free. Key applications include charging circuits and other power management functions in portable

Product Overview The LSI1012XT1G and S-LSI1012XT1G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They feature gate-source ESD protection, low on-resistance (0.7 typical), and a low threshold voltage (0.8V typical) for efficient operation. These devices offer fast switching speeds (10 ns) and are suitable for driving relays, solenoids, lamps, displays, and memory. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, making them

Product OverviewThe ME4425 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.Product AttributesBrand: Matsuki Electric/Force MosProduct

Product Overview The L2N7002KX4T5G and S-L2N7002KX4T5G are small signal MOSFETs designed for automotive and general applications. The S-prefix variant is specifically qualified for automotive use with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities. These devices feature RoHS compliance and Halogen-Free materials, along with Gate-Source ESD protection. They are suitable for various electronic circuits requiring reliable switching

Product OverviewThe ME15N25F is a high-performance N-Channel logic enhancement mode power field effect transistor. Utilizing advanced high cell density DMOS trench technology, it offers extremely low on-state resistance and exceptional DC current capability. This makes it ideal for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.Product AttributesBrand: Matsuki Electric/ Force mosProduct Variants: ME15N25F (Pb-free),

Product OverviewThe MDU04N010VRH is a single N-Channel Trench MOSFET from Magnachip Semiconductor, featuring 40V breakdown voltage, 100A continuous drain current, and very low on-resistance (< 1.0m). It utilizes advanced MOSFET technology for high performance in on-state resistance and fast switching. This device is ideal for synchronous rectification in server and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Certifications: Halogen

Product Overview The LN2308LT1G is a 60V N-Channel Enhancement-Mode MOSFET designed for efficient power management. It features an extremely low on-resistance (RDS(ON) 100m@VGS =10V) due to its super high density cell design, offering exceptional on-resistance and maximum DC current capability. This MOSFET is RoHS compliant and Halogen Free, making it suitable for various applications including power management in notebooks, portable equipment, battery-powered systems, load

Product Overview The LSI1012BN3T5G and S-LSI1012BN3T5G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They offer a low on-resistance of 0.7 and a low threshold voltage of 0.8V (typ), enabling ease in driving switches and low-voltage operation. With a fast switching speed of 10 ns, these MOSFETs are suitable for high-speed circuits and battery-operated systems. They are RoHS compliant and Halogen Free. The S- prefix variant is AEC-Q101

Product Overview The LP7411DT1WG is a 60V P-Channel (D-S) MOSFET designed for various power management applications. It features low RDS(on) with trench technology, low thermal impedance, and fast switching speed, making it suitable for load switches, DC/DC conversion, and motor drives. This device complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS requirements and Halogen Free Technical

Product Overview The LP2301ALT1G and S-LP2301ALT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for power management in notebooks, portable equipment, battery-powered systems, load switches, and DSC applications. These devices offer low on-state resistance and are compliant with RoHS requirements and Halogen Free standards. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101

Product Overview This product is a high-density N-channel MOSFET designed for extremely low RDS(ON). It features voltage-controlled small-signal switching and comes in a surface mount package. The epoxy meets UL 94V-0 flammability rating and the device is Moisture Sensitivity Level 1. It is also Halogen Free, a "Green" Device, and Lead Free, RoHS Compliant. The operating junction temperature range is -55C to +150C, with a storage temperature range of -55C to +150C. Thermal

Product Overview The LN2302LT1G is a 20V N-Channel Enhancement-Mode MOSFET designed for high-density cell applications, offering ultra-low on-resistance and improved shoot-through Figure of Merit (FOM). This device is compliant with RoHS requirements and is Halogen-Free. Key features include a Drain-to-Source Voltage (VDS) of 20V and low on-resistance values such as 60m at Vgs@4.5V, Ids@2.8A, and 115m at Vgs@2.5V, Ids@2.0A. It is suitable for applications requiring efficient

Product Overview The S-LN4501SLT1G is a 20V N-Channel (D-S) MOSFET designed for load/power switching in portable and computing applications, as well as DC-DC conversion. It features a low voltage gate drive rated at 2.5V and complies with RoHS requirements and Halogen Free. The device is AEC-Q101 qualified and PPAP capable when using the 'S-' prefix for automotive and other applications requiring unique site and control change requirements. Product Attributes Brand: Leshan

Product OverviewThe ME4626/ME4626-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package. Key features include extremely low

Product OverviewThe MEE4294-G is a preliminary N-Channel logic enhancement mode power MOSFET manufactured using high cell density EMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like synchronous rectification in AC/DC adapters or PC power supplies, where efficient load switching and low power loss are crucial within a compact surface-mount package. Key features include extremely low RDS(ON) and high DC current

Product Overview The LN4501LT1G is a N-Channel Power MOSFET designed for load and power switching applications in portable and computing devices. It features leading planar technology for low gate charge and fast switching, a 2.5 V rating for low voltage gate drive, and a SOT-23 surface mount package for a small footprint. This device is compliant with RoHS requirements and Halogen Free. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material Compliance: RoHS requiremen

Product Overview This N-Channel, Single MOSFET with Gate ESD Protection is designed for various electronic applications requiring efficient switching and reliable performance. It features a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching speeds. The device boasts a minimum breakdown voltage rating of 30V and is ESD protected. It is RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP

Product Overview The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), making it ideal for efficient power management. This device is AEC-Q101 Qualified, Halogen Free, and RoHS Compliant, ensuring suitability for automotive and environmentally conscious industrial applications. Its robust construction meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1

Product OverviewThe ME20P03 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits where low power loss in a small surface-mount package is required. Key features include exceptionally low RDS(ON) and high DC current capability