Single FETs, MOSFETs

Product Overview The LP2305LT1G is a 30V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device is suitable for various applications and is Halogen Free, complying with RoHS requirements. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material: Halogen Free Compliance: RoHS requirements Package Type: SOT 23 (TO236AB) Technical Specifications Parameter Symbol Min. Typ. Max

Product OverviewThe MS12N100FC/E/T/S is a high-performance N-channel MOSFET designed for efficient power switching applications. It features low gate charge, low Crss (typ 13pF), and fast switching speeds, making it suitable for high-frequency applications. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and robustness. It is a RoHS compliant product.Product AttributesBrand: MaspowerProduct Series: MS12N100Revision: H1.08Certific

MS24N80HCE0/C0 Super Junction MOSFET SeriesThe MS24N80HCE0/C0 is a Super Junction MOSFET series designed for high-efficiency power applications. It features low gate charge, ultra-fast switching, and is 100% avalanche tested. This series is ideal for power factor correction, switched-mode power supplies, uninterruptible power supplies, and low-power chargers and adapters.Product AttributesBrand: MaspowerCertifications: RoHS CompliantTechnical SpecificationsParameterSymbolTest

Product OverviewThe ME2325 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.Product AttributesBrand: Matsuki Electric/Force

Product OverviewThe ME7804S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD

Product Overview The LN3424DT2G is a 30V N-Channel Enhancement MOSFET designed for efficient power management applications. Featuring low RDS(ON) achieved through trench technology, it offers fast switching speeds and a low thermal impedance. This MOSFET is suitable for DC/DC conversion, power routing, and motor drive applications. Product Attributes Brand: Leshan Radio Company, LTD. Product Type: N-Channel Enhancement MOSFET Material Compliance: Halogen Free, RoHS compliant

MCAC53N06Y N-CHANNEL MOSFET Product Overview The MCAC53N06Y is an N-Channel MOSFET designed with Split Gate Trench Power MV MOSFET Technology. It offers low gate charge and is housed in a DFN5060 package, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is Halogen Free, "Green", and Lead Free/RoHS Compliant. It is suitable for applications requiring efficient power handling and switching characteristics. Product Attributes Brand: MCCSEMI

Product Overview This document details the LBSS8402DW1T1G and S-LBSS8402DW1T1G series of N-Channel and P-Channel POWER MOSFETs from Leshan Radio Company, LTD. These devices are designed for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. They are RoHS compliant and Halogen Free. The MOSFETs are available in the SC88 (SOT-363) package and are supplied in tape and reel.

Product OverviewThe ME15N25 is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This technology is optimized for minimal on-state resistance, making these devices ideal for low-voltage applications. Key advantages include extremely low RDS(ON) and exceptional DC current capability.Product AttributesBrand: Matsuki Electric/ Force mosProduct Variants: ME15N25 (Pb-free), ME15N25-G (Green product

Product Overview The L2N7002SLLT1G and S-L2N7002SLLT1G are N-Channel Small Signal MOSFETs designed for various applications including low side load switches, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. The S-prefix variants are qualified for automotive applications with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability. These devices offer ESD protection and low RDS(on), with RoHS and

Product Overview The L2SK3018WT1G and S-L2SK3018WT1G are N-channel MOSFETs designed for various applications, including automotive, requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable. Key features include low on-resistance, fast switching speed, and ease of paralleling. The low voltage drive capability (2.5V) makes them ideal for portable equipment, and their design facilitates easy drive circuit implementation. They

Product OverviewThe MS66N85IDB3/F4 H1.02 Maspower is a high-performance power MOSFET designed for various switching and power conversion applications. It features an international standard package, low on-resistance (RDS(ON) typ. = 70m @ IC = 10A), excellent avalanche ruggedness, low gate charge (QG), and very low on-resistance. This makes it suitable for switch-mode and resonant-mode applications, power supplies, DC-DC converters, PFC circuits, AC/DC motor drivers, and

Product Overview The LPB8917DT0AG is a P-Channel 150-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as load switches, DC/DC conversion, and motor drives. The material complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS requirements, Halogen Free Device Marking: A17 Package Type: DFN3333-8A Technical

Product Overview The LP2301ELT1G and S-LP2301ELT1G are 20V P-Channel Enhancement-Mode MOSFETs designed for various applications. These devices feature advanced trench process technology and a high-density cell design for ultra-low on-resistance. They offer simple drive requirements, a small package outline, and are surface mount devices. The S-prefix variants are specifically designed for automotive and other applications requiring unique site and control change requirements,

Product Overview The L2N7002KLT1G and S-L2N7002KLT1G are N-Channel Small Signal MOSFETs designed for automotive and general applications. These devices offer RoHS and Halogen Free compliance, with the S-prefix variant specifically qualified for automotive use requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. They feature ESD protection, making them suitable for sensitive electronic assemblies. Product Attributes Brand

Product Overview The LN2502LT1G is a 20V N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for applications requiring efficient power switching and low conduction losses. This MOSFET offers excellent performance characteristics, including low RDS(ON) values at various gate-source voltages and drain currents. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Package Type:

Product Overview The LP3418DT2AG is a 30V P-Channel (D-S) MOSFET designed for various power management applications. It features low RDS(ON) achieved through trench technology, offering efficient performance with a low thermal impedance and fast switching speed. This MOSFET is compliant with RoHS requirements and Halogen Free standards. Key applications include load switches, DC/DC conversion, and motor drives. Product Attributes Brand: Leshan Radio Company, LTD. Material

Product OverviewThe MMF50R280P is a power MOSFET utilizing Magnachip's advanced super junction technology, designed for high efficiency with very low on-resistance and gate charge. Its optimized charge coupling technology offers an advantage of low EMI and low switching loss, making it suitable for various power electronics applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Code: MMF50R280PMarking: 50R280PPackage: TO-220FPacking: TubeCertifications:

Product OverviewThe MS8N120FC/T/E/S is a high-performance N-channel MOSFET from Maspower, designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, very low intrinsic capacitances, high speed switching, and very low on-resistance, making it ideal for welders, UPS systems, PV inverters, and general switching applications.Product AttributesBrand: MaspowerModel: MS8N120FC/T/E/S H1.13Technical SpecificationsParameterSymbolValueUnitCon

Product Overview The LBSS139LT1G and S-LBSS139LT1G are N-Channel Power MOSFETs designed for low voltage applications. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V) and ESD protection up to 1500V. The S-prefix variants are qualified for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. They are RoHS compliant and Halogen Free. Product Attributes Compliance: RoHS, Halogen Free