Single FETs, MOSFETs

Product OverviewThe ME2323D(-G) is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.Product AttributesBrand: Matsuki Electric/Force

Product OverviewThe MDES14N045RH is Magnachip's latest generation of MV MOSFET Technology, offering high performance with the lowest Rds(on), fast switching capabilities, and excellent quality. This single N-channel trench MOSFET is designed for industrial applications including low power drives for e-bikes, light electric vehicles, DC/DC converters, and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Part Number: MDES14N045RHPackage: TO-263

Product OverviewThe MS50N85IDC0 H1.02 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitance, and very low on-resistance, making it ideal for use in UPS, PV Inverters, and general switching applications.Product AttributesBrand: MaspowerTechnical SpecificationsParameterSymbolTest conditionsMinTypMaxUnitAbsolute Maximum

Product OverviewThe G2301S is a P-Channel Advanced Power MOSFET designed for high-side load switching and general switching circuit applications. It offers low On-State Resistance (RDS(on)) at various gate-source voltages, including -3.3V logic level control, and comes in a Pb-free, RoHS compliant SOT23 package.Product AttributesBrand: LGE Semi (implied by URL and email)Package: SOT23Certifications: PbFree, RoHS CompliantTechnical SpecificationsParameterConditionMinTypMaxUnit

Product Overview The L2N7002SDW1T1G and S-L2N7002SDW1T1G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, ensuring environmental responsibility. The S-prefix variant is specifically qualified for automotive and other applications requiring stringent site and control change requirements, including AEC-Q101 qualification and PPAP capability. They offer ESD protection and low RDS(on) for efficient

Product OverviewThe BSS138W is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers key advantages such as low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for efficient power management and signal switching. Its low input/output leakage further enhances its reliability.Product AttributesType No.: BSS138WMarking: K38Package Code: SOT-323Brand:

Product Overview The LESHAN RADIO COMPANY, LTD. LP2501DT1G is a 20V P-Channel Enhancement-Mode MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), making it suitable for notebook power management, portable equipment, battery-powered systems, load switches, and DSCs. The material is Halogen Free and compliant with RoHS requirements. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material Compliance:

Product OverviewThe BSS139 is a 50V/0.2A N-Channel Advanced Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V, 3.3V logic level control, and ESD protection up to 2000V. This device is Pb-Free and RoHS Compliant, housed in a SOT23 package.Product AttributesBrand: LGE Semiconductor (implied by URL and email)Package: SOT23Certifications: Pb-Free, RoHS CompliantESD Protection: 2000VTechnical

Product OverviewThe MS5N100/S/FT/FE/FD is a Planar Process N-channel 1000V MOS power transistor. It offers extremely high dv/dt capability, is 100% avalanche tested, and features minimized gate charge and very low intrinsic capacitances, ensuring good manufacturing repeatability. This device is designed for switching applications.Product AttributesBrand: MaspowerOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificatio

IXTT16N20D2 / IXTH16N20D2 Depletion Mode MOSFET N-ChannelThis N-Channel Depletion Mode MOSFET offers a "Normally ON" mode, making it suitable for various applications requiring easy mounting, space savings, and high power density. It is designed for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.Product AttributesBrand: IXYSOrigin: USA (implied by patent information)Material: Molding Epoxies Meet UL 94 V

Product Overview The LN3406DT2AG is an N-Channel 30V (D-S) MOSFET featuring low RDS(on) trench technology, fast switching speed, and low thermal impedance. It is designed for applications such as white LED boost converters and DC-DC converters, making it suitable for automotive systems. This device is Halogen Free and compliant with RoHS requirements. Product Attributes Brand: Leshan Radio Company, LTD. Model: LN3406DT2AG Channel Type: N-Channel Voltage Rating: 30V (D-S)

Product OverviewThe MDF13N65B is an N-channel MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET technology to deliver low on-state resistance, high switching performance, and excellent quality. This device is well-suited for applications requiring high-speed switching and general-purpose power management. Its robust design makes it ideal for Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) circuits.Product AttributesBrand: Magnachip Semiconduct

Product Overview The LSIC1MO170E0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET optimized for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for high-frequency switching, and normally-off operation at all temperatures. Its ultra-low on-resistance makes it suitable for demanding applications. Product Attributes Brand: Littelfuse Material: Silicon Carbide (SiC) Type: N-Channel MOSFET

Product Overview The LP3401LT1G is a 30V P-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device is compliant with RoHS requirements and Halogen Free. It is designed for various applications requiring efficient power switching and low conduction losses. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material Compliance: RoHS, Halogen Free Technology: Advanced trench process

Product Overview The LN2302ALT1G and S-LN2302ALT1G are 20V N-Channel Enhancement-Mode MOSFETs designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance with high DC current capability. These devices comply with RoHS requirements and are Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Key applications

Product OverviewThe ME50N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converters requiring low in-line power loss. Its super high density cell design offers extremely low RDS(ON) and exceptional DC current capability.Product AttributesBrand

Product OverviewThe ME4565 is an N- and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product

Product OverviewThe LGE3M30065Q is a Silicon Carbide Power MOSFET designed for high-efficiency and high-reliability applications. It offers advantages such as higher system efficiency, convenience for parallel device configurations without thermal runaway, suitability for high-temperature applications, and robust performance in hard switching scenarios. This device is sensitive to electrostatic discharge and requires adherence to ESD handling procedures.Product AttributesBran

Product Overview The L2N7002KN3T5G and S-L2N7002KN3T5G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, with the 'S-' prefix variant offering AEC-Q101 qualification and PPAP capability for automotive and other demanding applications requiring unique site and control change requirements. They feature low RDS(on) and ESD protection, making them suitable for use as low-side load switches, level

Product Overview The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various electronic applications. They offer low RDS(on), ESD protection, and compliance with RoHS and Halogen Free requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These MOSFETs are ideal for use in low-side load switches, level shift