Single FETs, MOSFETs

Product Overview The SRK7002LT1G and S-SRK7002LT1G are N-Channel Small Signal MOSFETs designed for efficient power management. These devices offer low on-resistance, fast switching speeds, and low-voltage drive capabilities, making them suitable for easily designed drive circuits. They are also easy to parallel and feature ESD protection up to 2000V. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements,

Product Overview The LP4435T1G is a P-Channel 30V (D-S) MOSFET featuring low RDS(on) achieved through trench technology, low thermal impedance, and fast switching speeds. It is designed for applications such as load switches, DC/DC conversion, and motor drives. This device is manufactured by Leshan Radio Company, LTD. Product Attributes Brand: Leshan Radio Company, LTD. Model: LP4435T1G Marking: LP4435 Technology: Trench Technical Specifications Parameter Symbol Test

Product Overview The LP3218DT1G is a 12V P-Channel Enhancement MOSFET designed for space-saving applications. It features an ultra-low RDS(on) and a low-profile DFN 2.0x2.0x0.62 mm package. This device is suitable for applications such as battery switches and high-side load switches. It is a Pb-Free and Halogen-Free device, compliant with RoHS requirements. Product Attributes Brand: Leshan Radio Company, LTD. Device Type: P-Channel Enhancement MOSFET Voltage Rating: 12V

Product OverviewThe ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface mount package. Key features include

Product OverviewThe ME4920 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its design ensures low in-line power loss within a very small outline surface mount package.Product AttributesBrand: Matsuki Electric/

Product OverviewThe BSS138DW is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for applications requiring efficient and rapid switching. The device also features low input/output leakage.Product AttributesBrand: LG SEMIPackage Type: SOT-363Ordering Information: BSS138DWMarking Code:

Product OverviewThe MS170N65HGF4 H1.02 is an N-Channel power MOSFET from Maspower, featuring low RDS(on), high current handling capability, a fast intrinsic diode, and avalanche rating. It is designed for applications such as DC-DC converters, UPS, AC motor drives, battery chargers, and switched-mode and resonant-mode power supplies.Product AttributesBrand: MaspowerModel: MS170N65HGF4 H1.02Technical SpecificationsParameterSymbolTest ConditionsMinTypeMaxUnitAbsolute RatingsVDS

Product Overview The L2N7002DW1T1G and S-L2N7002DW1T1G are N-Channel Small Signal MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring RoHS compliance and Halogen-Free materials. They offer ESD protection up to 1000V, making them suitable for sensitive electronic circuits. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS

Product OverviewThis N-channel MOSFET features a high-density cell design for low RDS(on) and acts as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. It also includes ESD protection up to 2KV.Product AttributesBrand: LG SEMIModel: 2N7002KPackage: SOT-23Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitsDr

Product Overview The S-LP2305DSLT1G is a 12V P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD. Featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance, this surface mount device (SOT-23) offers fully characterized avalanche voltage and current, and improved shoot-through FOM. It is designed for simple drive requirements and comes in a small package outline, making it suitable for various electronic applications.

Product OverviewThe IXFN230N20T is a GigaMOSTM Power MOSFET from IXYS, featuring N-Channel Enhancement Mode with Avalanche Rated and Fast Intrinsic Diode. It offers high current handling capability, low RDS(on), and is designed for easy mounting and space savings, enabling high power density. This MOSFET is suitable for various high-speed power switching applications.Product AttributesBrand: IXYSPackage: miniBLOC, SOT-227Isolation Voltage: 2500 V~Material: Aluminium Nitride

Product Overview The LN2324DT2AG and S-LN2324DT2AG are 20V N-Channel (D-S) MOSFETs designed for various power applications. They feature low RDS(ON) achieved through trench technology, low thermal impedance, and fast switching speeds. These devices are RoHS compliant and Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with specific control change requirements. Key applications include Power Routing,

Product OverviewThe MMQ60R078RF is a 600V N-channel Power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. Its low gate charge and ultra-fast body diode enhance turn-off performance, providing excellent efficiency and EMI in soft-switching applications. This MOSFET is ideal for soft-switching applications, server power supplies, telecom, and EV charging.Product AttributesBrand: Magnachip

Product OverviewThe IXTK200N10L2 and IXTX200N10L2 are N-Channel Enhancement Mode Power MOSFETs designed for linear operation. They feature avalanche rating and guaranteed FBSOA (Forward-Bias Safe Operating Area). These MOSFETs offer advantages such as easy mounting, space savings, and high power density, making them suitable for applications like solid-state circuit breakers, soft start controls, linear amplifiers, programmable loads, and current regulators.Product Attributes

Product OverviewThe MS12N120HJC0 is a Planar Process NPN MOS H1.05 Maspower device designed for high-voltage applications. It features a VDS of 1200V and ID of 12A with an ultra-low RDS(on) of less than 3 at VGS=10V, achieved through a high-density cell design. This device offers low gate charge and improved dv/dt capability, making it suitable for various high-voltage power supply and pulse power applications.Product AttributesBrand: MaspowerProduct Type: NPN MOSProcess:

Product OverviewThe MMD60R400RFZ is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced switching losses. It features an ultra-fast body diode, 100% avalanche tested, and a green package with Pb-free plating and halogen-free components, including an integrated Zener

IXTT90P10P / IXTH90P10P PolarPTM Power MOSFETs The IXTT90P10P and IXTH90P10P are P-Channel Enhancement Mode PolarPTM Power MOSFETs designed for high-performance applications. These devices feature an international standard package, avalanche rating, fast intrinsic diode, and rugged PolarPTM process, offering advantages such as easy mounting, space savings, and high power density. They are suitable for use in high-side switches, push-pull amplifiers, DC choppers, automatic

Product OverviewThe 2300 is designed using trench processing techniques to achieve extremely low on-resistance, fast switching speed, and improved transfer efficiency. These features make it an efficient and reliable device for a variety of DC-DC applications. Key advantages include low on-resistance, 150C operating temperature, fast switching, and lead-free, RoHS compliance. It is suitable for battery protection, load switching, and power management applications.Product

Product Overview The 2N7002KT is a voltage-controlled small signal switch featuring a high-density cell design for low RDS (ON). It offers rugged reliability and high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters. Product Attributes Marking: KN Package Type: SOT-523 Material: Plastic-Encapsulate Technical Specifications Symbol Parameter Test Conditions Min Typ Max Unit VDS Drain-Source voltage 60 V VGS Gate

G2302 N-Channel 20-V (D-S) MOSFETThe G2302 is a TrenchFET Power MOSFET designed as a load switch for portable devices and DC/DC converters. It offers efficient power management for various electronic applications.Product AttributesBrand: LGE SemiconductorModel: G2302Channel Type: N-ChannelMarking: 2302Revision: 20180501-P1Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsDrain-Source VoltageVDS20VGate-Source VoltageVGS±8VContinuous Drain