Single FETs, MOSFETs

Product OverviewThe MS60N20HGT0 H1.03 by Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a high breakdown voltage of 200V and a continuous drain current of 60A, with improved dv/dt capability and fast switching characteristics. This device is 100% avalanche tested, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).Product AttributesBrand:

Product Overview LESHAN RADIO COMPANY, LTD. presents the LBSS84LT1G and LBSS84LT3G P-Channel SOT-23 MOSFETs. These miniature surface-mount devices are engineered to reduce power loss and conserve energy, making them ideal for small power management circuitry. Typical applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones. The S-Prefix variants (S

Product OverviewThe ME4454 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.Product AttributesBrand: Matsuki (implied by

Product Overview The S-LNP2010DT2AG is a complementary N- and P-Channel Enhancement Mode MOSFET designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable. This device offers low on-resistance characteristics for both N-channel and P-channel configurations, ensuring efficient power handling. It is RoHS compliant and Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Model

Product OverviewThe LSIC1MO170T0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET designed for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for enhanced switching performance, and normally-off operation across all temperatures. Optimized for demanding applications, it offers an enhanced package with a separate driver source pin and improved creepage. This RoHS compliant, lead-free, and

Product Overview The LP3475T1G is a 30V P-Channel Enhancement-Mode MOSFET designed for various applications. It offers low on-state resistance with RDS(ON) as low as 65m at VGS = -10V and 90m at VGS = -4.5V. This device complies with RoHS requirements and is Halogen Free, ensuring material compliance. It is available in a SOT23-6 package and is supplied on tape and reel. Product Attributes Brand: Leshan Radio Company, LTD. Model: LP3475T1G Type: P-Channel Enhancement-Mode

Product OverviewThe ME4457 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBrand: Matsuki (implied by datasheet

Product OverviewThe MS2N350HGC0 H1.02 from Maspower is a high-speed switching power MOSFET designed for demanding high-voltage applications. It features a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, enabling efficient and rapid switching. This MOSFET is ideal for high voltage power supplies, capacitor discharge applications, pulse circuits, and laser and X-ray generation systems.Product AttributesBrand: MaspowerModel: MS2N350HGC0 H1

Product Overview The LP2301BLT1G is a P-Channel Enhancement-Mode MOSFET designed for simple drive requirements and features a small package outline in a SOT-23 (TO-236AB) surface mount device. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is fully characterized for avalanche voltage and current, offering improved shoot-through FOM. It is compliant with RoHS requirements. Product Attributes Brand: LESHAN

Product Overview The S-LP3415ELT1G is a P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD., designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a small outline SOT-23 (TO-236AB) surface mount device, it is suitable for various applications requiring efficient power switching. This device is AEC-Q101 Qualified and PPAP Capable when designated with the 'S-' prefix for automotive and other

CPC5602 N-Channel Depletion Mode FETThe CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) designed for various applications including telecommunications, security systems, and power supplies. It is particularly suited as a support component for LITELINK Data Access Arrangements (DAA). This depletion mode device offers a low on-resistance, especially at cold temperatures, and features a high input impedance with low input and output leakage. Its compact SOT

Product OverviewThe MDP1723TH is a single N-channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET Technology to deliver high performance in on-state resistance and fast switching. It offers excellent quality and is suitable for synchronous rectification in server and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Line: MDP1723THTechnology: Trench MOSFETCertifications: RoHS Status: Halogen FreeTechnical

Product OverviewThe IXFA72N30X3 is an N-Channel Enhancement Mode Avalanche Rated X3-Class HiPerFETTM Power MOSFET from IXYS. It features international standard packaging, low RDS(ON) and QG, avalanche rating, and low package inductance, offering high power density, easy mounting, and space savings. This MOSFET is suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.Product Attributes

Product OverviewThe ME2320D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection.Product

Product Overview The L2N7002KN3T5G is a N-Channel Small Signal MOSFET from LESHAN RADIO COMPANY, LTD., designed for a variety of low-power applications. This device features ESD protection, low on-resistance (RDS(on)), and comes in a compact SOT883 surface mount package. It is suitable for use in low-side load switching, level shifting circuits, DC-DC converters, and portable electronic devices such as DSCs, PDAs, and cell phones. The material is Halogen Free and compliant

Product Overview The LBSS138DW1T1G and S-LBSS138DW1T1G are N-Channel Power MOSFETs designed for low voltage applications, featuring a low threshold voltage (VGS(th): 0.5V to 1.5V). The 'S-' prefix models are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with strict site and control change requirements. These devices are RoHS compliant and Halogen Free, ensuring environmental safety. They are available in the SC-88 (SOT-363)

Product Overview The LN7910DT1WG is an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. It features an advanced package and silicon combination for low RDS(on) and high efficiency. The product complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Model: LN7910DT1WG Material Compliance: RoHS, Halogen Free Package Type: DFN5060-8B Transistor Type: N-Channel Power Trench MOSFET Technical Specifications

Product OverviewThe MMP60R190P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced switching losses, making it suitable for various high-efficiency applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Revision: 1.2Date: Jun. 2021Certification

Product Overview The S-LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for efficient power management in various electronic applications. It features an extremely low RDS(ON) due to its super high-density cell design, offering exceptional on-resistance and maximum DC current capability. This device is suitable for power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters. The material of

Product OverviewThe MS290N10HDC0 H1.03 from Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a VDS of 100V and a continuous ID of 290A, with low Crss and low gate charge, making it suitable for secondary synchronous rectification, load switching, LED backlighting, and industrial power supplies.Product AttributesBrand: MaspowerModel: MS290N10HDC0 H1.03Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolu