Single FETs, MOSFETs

Product OverviewThe JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7000 is an N-Channel MOSFET in a TO-92 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for various applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage Type: TO-92 Plastic

Product OverviewThe CJBA3139K is a P-Channel MOSFET in a DFN1006-3L package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This product is lead-free and suitable for various load and power switching applications, interfacing, battery management for ultra-small portable electronics, and logic level shifting.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,

Product OverviewThe CJS9004A is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a TSSOP8.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: S9004Packaging: TSSOP8Molding Compound: Green (if solid dot present

Product DescriptionThe CJQ4828 is a Dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch applications and PWM applications.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJQ4828Package: SOP8 Plastic-EncapsulateMarking: Q4828Green Molding Compound: Solid dot = Green molding compound device, if none, the normal device.Date Code: YYTechnical

Product OverviewThe CJU65P06 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers and portable, battery-powered equipment.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: U65P06Package: TO-252-2LMaterial: Plastic-Encapsulate MOSFETSColor: Green molding compound (if

Product OverviewThe CJMPD08 is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(on) and low gate charge. Its low profile design is ideal for thin environments, and it supports bidirectional current flow with a common source configuration. This MOSFET is optimized for battery and load management applications in portable equipment, including Li-Ion battery charging, protection circuits, and high-side load switching.Product AttributesBrand: JIANGSU

Product OverviewThe BSS138 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications, offering extremely low RDS(on). It features a rugged and reliable design, suitable for direct logic-level interfacing with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays.Product AttributesBrand: JIANGSU

Product OverviewThe CJAB35N03S is a Plastic-Encapsulated MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity. The excellent package design ensures good heat dissipation, making it suitable for high-side switching in POL DC/DC converters and secondary-side synchronous

Product OverviewThe CJQ9435 is a P-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is designed for use as a low-side switch in Notebook CPU core power conversion, and is also suitable for battery switch and load switch applications.Product AttributesBrand: JIANGSU CHANGJIANG

Product OverviewThe CJU40P04A is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Key features include a high-density cell design for ultra-low on-resistance and a reliable, rugged construction.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS

Product OverviewThe CJ2302 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management with its low on-resistance characteristics.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Encapsulation: PlasticMarking: S2Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsVDS20VVGS8VID2.1AISContinuous Source-Drain Current (Diode

Product OverviewThe N-Channel Trench Power MOSFET utilizes advanced trench technology to provide excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching applications, offering high power and current handling capability.Product AttributesLead free product is acquiredTechnical SpecificationsDevice MarkingDevice PackageVDS (V)ID (A)RDS(ON) @ VGS=4.5V (m)RDS(ON) @

Product OverviewThe BSS138 is a 50V N-Channel MOSFET featuring a high-density cell design for extremely low RDS(on). It offers a rugged and reliable performance, making it suitable for direct logic-level interface with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, and in battery-operated systems and solid-state relays.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor:

Product OverviewThe TNM01K20FX is an N-Channel enhancement mode MOSFET transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source Breakdown VoltageV

Product OverviewThe 2N7002KX is an N-channel MOSFET in an SOT-23 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), rugged reliability, and high saturation current capability. This device is ESD protected and suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JY Electronics (implied by website)Package: SOT-23Marking: NJ, 72K, 7002Technical Specificatio

Product OverviewThe TPM2030JX is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements.Product AttributesBrand: JY Electronics (implied by website)Origin: China (implied by website)Certifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source VoltageVDSS-30VGate Source

Product OverviewThese N-channel enhanced VDmosfets, obtained by self-aligned planar technology, reduce conduction loss, improve switching performance, and enhance avalanche energy. They are compliant with RoHS standards.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCertifications: RoHS compliant, UL flammability classification 94V-0, Halogen-freeCase Material: Green molding compoundTechnical SpecificationsParameterSymbolRatingUnitConditionAbso

Product OverviewThe V2N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high avalanche ruggedness. This makes it ideal for use in switching power supplies and adaptors.Product AttributesBrand: Jingdao MicroelectronicsProduct Name: V2N65Case: TO-251ABWMaterial: "Green" molding compound, UL flammability classifica

Product OverviewThe F7N60 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green" molding compound, UL flammability

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