Single FETs, MOSFETs

Product OverviewThe 2N7002AK is an N-CHANNEL MOSFET from Jingdao Microelectronics, designed for efficient power management and motor control applications. It features fast switching capability, avalanche energy testing, low on-resistance, low input capacitance, and a small surface mount package (SOT-23). These characteristics make it suitable for various electronic designs requiring reliable MOSFET performance.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin:

Product OverviewThe D5N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This device is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green" molding compound, UL flammability classifica

Product Overview These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. The low thermal impedance copper leadframe SOT23 saves board space, while lower gate charge and fast switching speed are achieved through high performance trench technology. This N-Channel 30-V (D-S) MOSFET is designed for applications requiring high efficiency and

Product OverviewThe TNM3K50FX is an N-Channel 50V ESD Protection N-MOSFET featuring a super high density cell design for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for various power management applications.Product AttributesBrand: JY-ElectronicsOrigin: ChinaModel: TNM3K50FXRevision: B2Technical SpecificationsParameterSymbolLimitUnitNotesDrain-Source Breakdown VoltageV(BR)DSS50VVGS=0V, ID=250AGate Threshold

Product OverviewThese miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.Product AttributesBrand: JY Electronics (implied by www.jy-electronics.com

Product OverviewThe TNM03K100K is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. The device is packaged in a RoHS-compliant SOT23 package.Product AttributesBrand: JY ElectronicsOrigin: ChinaCertifications: RoHSTechnical SpecificationsPart NumberTypeVDS (V)ID (A)RDS(ON) (m) @ VGS=10VPackageTNM03K100KXN-Channel Enhancement Mode

BSS123X N-Channel MOSFET The BSS123X is an N-Channel MOSFET designed for switching applications. It features a low RDS(on) and is operated at low logic level gate drive, making it suitable for various electronic circuits. This surface mount package device offers efficient performance with key parameters like VDS=100V and ID=0.17A. Product Attributes Brand: JY Electronics Origin: China Model: BSS123X Marking: BSS123 or B123 Technical Specifications Parameter Condition Min. Typ

Product OverviewThe JY3407AX is a product from JY Electronics, designed for various applications. Further details on its function, advantages, and specific application scenarios are not explicitly provided in the source text.Product AttributesBrand: JY ElectronicsOrigin: China (implied by website domain)Technical SpecificationsModelRevisionJY3407AXA4JY3407A43407A42405091034_JingYang-JY3407AX_C3038098.pdf

Product OverviewThe D4N60 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche capabilities. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green"

Product OverviewThe D4N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics, making it suitable for use in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green" molding compound, UL flammability classificati

F16N65L - N-CHANNEL POWER MOSFETThe F16N65L is a high voltage power MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.Product AttributesBrand: Jingdao MicroelectronicsOrigin: ChinaCase Material: "Green" molding compound, UL flammability classification

NM3400 N-Channel MOSFET The NM3400 is an N-Channel MOSFET from Jingdao Microelectronics, designed for high-speed switching and power management applications. Its high-density cell design and Trench Power LV MOSFET Technology contribute to low RDS(ON) values, making it suitable for load switching and PWM applications. The device comes in a SOT-23 package. Product Attributes Brand: Jingdao Microelectronics co.LTD Origin: Shandong, China Package: SOT-23 Technical Specifications

Product OverviewThe PM3401A is a P-CHANNEL MOSFET designed for power management applications. It features a drain-source voltage of -30V and low on-state resistance (RDS(ON) 90m @ VGS = -10V). This MOSFET is suitable for power management in notebooks, portable equipment, battery-powered systems, and load switching.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbs

Product OverviewThe D7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green" molding compound, UL flammability

Product OverviewThese N-channel enhanced VDmosfets, obtained by self-aligned planar technology, reduce conduction loss, improve switching performance, and enhance avalanche energy. They accord with the RoHS standard.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong Jingdao Microelectronics Co., Ltd.Case Material: Green molding compound, UL flammability classification 94V-0, Halogen-freeCertifications: RoHS compliantLead Finish: Lead freeTechnical

Product OverviewThe F7N60L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao MicroelectronicsOrigin: Shandong Jingdao Microelectronics Co., LTDCase Material: "Green" molding compound, UL

Product OverviewThese miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.Product AttributesBrand: JY Electronics (inferred from

Product OverviewThe F5N65 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Case: ITO-220ABWMaterial: "Green" molding compound, UL flammability classificatio

Product OverviewThe N-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for battery protection and other switching applications, offering high power and current handling capabilities.Product AttributesLead-free product acquiredTechnical SpecificationsParameterValueUnitConditionsVDS20VVGS=0VVGS±12VVDS=0VID (Continuous)2.9AIDM (Pulsed

Product OverviewThe TPM3012V1SX is a high cell density trenched P-channel MOSFET, offering excellent RDS(ON) and efficiency for most small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval.Product AttributesBrand: JY Electronics (implied by website)Origin: China (implied by website)Certifications: RoHS, Green ProductTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitDrain-Source