Single FETs, MOSFETs

Product OverviewThis 30V P-Channel Power MOSFET features a high-density design with ultra-low On-Resistance, making it suitable for power management in notebook computers, portable equipment, and battery-powered systems. It offers reliable and rugged performance.Product AttributesBrand: TITAN MICROOrigin: www.jy-electronics.com.cnPackage: SOP8Technical SpecificationsSymbolParameterTest ConditionMin.Typ.Max.UnitBVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250A-30VIDSSZero

Product OverviewThe TNM2030N3X is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.Product AttributesCertifications: RoHS, Green ProductOrigin: www.jy-electronics.com.cnContact: service@jy-electronics.com.cnTechnical SpecificationsParameterSymbolRa

Product OverviewThe F4N65L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaMaterial: "Green" molding compound, UL flammability classificatio

Product OverviewThe F7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDModel: F7N70Case: ITO-220ABWMaterial: "Green" molding compound, UL flammability

Product OverviewThe 2N7002KDWX is a 60V N-Channel MOSFET designed with a high-density cell structure for low on-resistance (RDS(on)). It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This MOSFET is ESD protected with a Gate HBM rating of 2.5KV and is suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JY Electronics (implied by website)Model: 2N7002KDWX

Product OverviewThe F12N60L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao MicroelectronicsOrigin: Shandong, ChinaMaterial: "Green" molding compound, UL flammability classification 94V-0

Product OverviewThe F7N70 is a high voltage N-channel Power MOSFET from Jingdao Microelectronics, designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This makes it ideal for use in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green"

Product OverviewThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. They offer high power and current handling capability in a miniature SOP-8 surface mount package, saving board space. Their low RDS(on) provides higher efficiency and extends battery life. Typical applications include DC-DC converters and power management in portable and battery-powered products such as

Product OverviewThe D2N65 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology, offering fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This makes it suitable for use in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaMaterial: "Green" molding compound, UL flammability

Product OverviewThe TNM2K30K-BI is an N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and easily designed drive circuits. This device is also suitable for interfacing and switching applications and can be easily paralleled.Product AttributesBrand: JY ElectronicsModel: TNM2K30K-BIMarking: 3N2KOrigin: ChinaWebsite: www.jy-electronics.com.cnContact: service@jy-electronics

Product OverviewThe TPM05K20CX is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on), operates at low logic level gate drive, and is suitable for load/power switching, interfacing, and logic switching. It is an ideal choice for battery management in ultra-small portable electronics.Product AttributesLead Free ProductSurface Mount PackageTechnical SpecificationsSymbolParameterConditionMin.Typ.Max.UnitVDSDrain-Source Voltage-20VVGSGate-Source

Product OverviewThe F12N60 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDModel: F12N60Package: ITO-220ABWMaterial: "Green" molding compound, UL flammability

Product DescriptionThe F4N60L is a high voltage power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This power MOSFET is commonly used in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong Jingdao Microelectronics Co., Ltd.Material: "Green" molding compound, UL

Product OverviewThe D4N65 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics such as fast switching times, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adaptors.Product AttributesBrand: Jingdao Microelectronics co.LTDOrigin: Shandong, ChinaCase Material: "Green" molding

Product OverviewThese miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones. Features include low RDS(on) for higher efficiency and extended battery

Product OverviewThe P-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as -4.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capability.Product AttributesLead free product is acquiredTechnical SpecificationsDevice MarkingVDS (V)ID (A)RDS(ON) @ VGS=-10V (m)RDS(ON) @ VGS=-4.5V (m)PackageOrdering QuantityJY3407X-30

Product OverviewThis N-Channel Enhancement Mode Power MOSFET is designed for high power and current handling capabilities. It features a low on-state resistance and direct logic-level interface for TTL/CMOS compatibility. Suitable for various driver applications, battery-operated systems, and solid-state relays, this lead-free product comes in a surface mount package.Product AttributesBrand: JY Electronics (implied from website)Origin: China (implied from website)Material:

Product OverviewThe 2N7002X is an N-Channel Enhancement Mode Power MOSFET designed for direct logic-level interfacing with TTL/CMOS. It is suitable for driving various loads including relays, solenoids, lamps, hammers, displays, memories, and transistors, making it ideal for battery-operated systems and solid-state relays. This lead-free product is available in a surface mount SOT-23 package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedCol

Product OverviewThe N-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capability. It is a lead-free product available in a surface mount package.Product AttributesBrand: JY (implied by www.jy-electronics.com.cn)Origin: China (implied by www.jy-electronics.com

Product OverviewThe TNM3K60FEX is an N-Channel Enhancement Mode Power MOSFET utilizing advanced technology. It offers excellent RDS(ON), low gate charge, and operates with low gate voltages, making it suitable for load switch and PWM applications.Product AttributesROHS compliantMSL: 3Technical SpecificationsParameterSymbolRatingsUnitTest ConditionsMinTypMaxDrain-Source Breakdown VoltageV(BR)DSS60VVGS=0VID=250uA60----Zero Gate Voltage Drain CurrentIDSS--uAVDS=48VVGS=0V---