Single FETs, MOSFETs
650V Silicon Carbide MOSFET Siliup SP75N65CTF Designed for High Current and High Voltage Applications
Product Overview The SP75N65CTF is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances. It offers high blocking voltage combined with low RDS(on), making it easy to parallel and simple to drive. This RoHS compliant device is suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters,
SP010N02BGHTD 100V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology
Product Overview The SP010N02BGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, DC-DC converters, and power management systems. The device comes in a TO-263 package. Product Attributes Brand: Siliup Semiconductor Technology
Low Input Capacitance 20V Dual P Channel MOSFET Siliup SP20P50DNQ in PDFN2X2 6L Package for Power Conversion
Product Overview The SP20P50DNQ is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 20P50D Package: PDFN2X2-6L Technical Specifications Parameter Symbol Conditions Rating Unit Product Summary
40V P Channel MOSFET Siliup SP40P25TH Featuring Low Gate Charge and High Avalanche Energy Capability
Product Overview The SP40P25TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40P25TH Device Code: 40P25 Technical Specifications Parameter Symbol Conditions Min. Typ.
SP010N13GTQ N Channel 100V Power MOSFET Featuring Split Gate Trench Technology for Battery Management
Product Overview The SP010N13GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features advanced Split Gate Trench Technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for battery management and uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co.
Power MOSFET Shenzhen ruichips Semicon RU40120M designed for fast switching and power conversion
Product OverviewThe RU40120M is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance and fast switching speed. It is 100% avalanche tested and available in lead-free and green devices. This MOSFET is ideal for DC/DC converters and power supply applications.Product AttributesBrand: Ruichips Semiconductor Co., LtdModel: RU40120MPackage: PDFN5060Certifications: Lead Free and Green Devices Available
Siliup SP30N04TH 30 Volt MOSFET Featuring TO 252 Package and Low Rdson for Power Switching Applications
Product Overview The SP30N04TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for applications like DC-DC converters and load switching. This device features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP30N04TH Device Code: 30N04 Package: TO-252 Technical Specification
Power switching MOSFET Siliup SP3070TH 30V N Channel device tested for single pulse avalanche energy
Product Overview The SP3070TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on) for optimal performance. The device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
Complementary MOSFET 60V lead free surface mount device Siliup SP6023CP8 for power management circuits
Product Overview The SP6023CP8 is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with distinct N-channel and P-channel characteristics for versatile circuit designs. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type:
N Channel Power MOSFET 150V Siliup SP015N09GHTD Featuring Split Gate Trench Technology for Switching
Product Overview The SP015N09GHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched and high-frequency circuits, and power management solutions. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:
Complementary MOSFET Siliup SP1022CP8 100V Drain Source Voltage 2.5A Continuous Current SOP8L Package
SP1022CP8 100V Complementary MOSFET The SP1022CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It features a lead-free product acquisition and is available in a surface mount SOP-8L package. The SP1022CP8 has undergone 100% single pulse avalanche energy testing. Product Attributes
Surface mount N Channel MOSFET Siliup SP010N110GTH designed for robust electronic system applications
Product Overview The SP010N110GTH is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device is suitable for surface mount applications. Key applications include battery switches and DC/DC converters, offering robust performance for demanding electronic systems. Product Attributes Brand: Siliup Technology: N-Channel MOSFET Package: TO-252 Device Code: SP010N110G Technical Specifications Parameter Symbol
Surface Mount 100V N Channel MOSFET Siliup SP010N35NK ROHS Compliant Halogen Free Suitable for DC DC Conversion
Product Overview The SP010N35NK is a 100V N-Channel MOSFET designed by Siliup Semiconductor Technology Co., Ltd. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters and Motor Control. It is available in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP010N35NK
Power MOSFET 40V 370A Low RDSon TOLL Package Siliup SP40N01AGHTO Suitable for PWM Circuits
Product Overview The SP40N01AGHTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package. Product Attributes Brand: Siliup Semiconduc
30V P Channel MOSFET Siliup SP4435BP8 Featuring Low Gate Charge and Fast Switching for Power Devices
Product Overview The SP4435BP8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 4435 Package: SOP-8L Origin: China
Low RDS on 30V N Channel MOSFET Siliup SP3400AT1 for Battery Switch and DC DC Converter Applications
Product Overview The SP3400AT1 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. Key applications include battery switches and DC/DC converters. This device features low on-resistance at various gate-source voltages, including 20m at 10V, 25m at 4.5V, and 30m at 2.5V. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP3400AT1 Package:
30V N Channel MOSFET Siliup SP30N02BTH Offering Low RDS on and Fast Switching for Power Circuits
Product Overview The SP30N02BTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for demanding applications. This MOSFET is 100% tested for single pulse avalanche energy and is designed for use in DC-DC converters and load switching scenarios. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30N02B Package: TO-252 Technical Specifications
P Channel MOSFET 20V Device Siliup SP2013TS Offering Low RDS on 13.5m and High Current Handling up to 11A
Product Overview The SP2013TS is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. This device offers a low RDS(on) of 13.5m at -4.5V and a continuous drain current of -11A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP2013TS Technology: P-Channel
Siliup SP60P03GHTQ 60V P Channel Power MOSFET Featuring Split Gate Trench Technology for Power Switching
Product Overview The SP60P03GHTQ is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge and Rds(on), and utilizes advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60P03GH Package: TO-220-3L
Siliup SP2006KT2 20V P Channel MOSFET Featuring 2KV ESD Protection for Battery Switch and Power Conversion
Product Overview The SP2006KT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP2006KT2 Package: SOT-23 Circuit Diagram Marking: 06K ESD Protection: 2KV Technical Specifications Parameter
