Single FETs, MOSFETs
100V Power MOSFET Siliup SP010N01BGHTO featuring N Channel design and advanced split gate trench technology
Siliup Semiconductor Technology Co. Ltd. SP010N01BGHTO 100V N-Channel Power MOSFET The SP010N01BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits
N Channel 100V Power MOSFET Featuring Low Gate Charge and Fast Switching Siliup SP010N04BGTQ for DC DC Converters
Product Overview The SP010N04BGTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, low gate charge, and low Rdson, enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters, motor control, and portable equipment applications. Product Attributes Brand: Siliup Semiconductor
40V N Channel Power MOSFET Siliup SP40N02AGTH Featuring Split Gate Trench Technology and TO 252 Package
Product Overview The SP40N02AGTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Power MOSFET 100V N-Channel Device Siliup SP010N08GTQ with Low Gate Charge and Fast Switching
Product Overview The SP010N08GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is 100% tested for single pulse avalanche energy. Ideal for power switching applications, battery management, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010N08GTQ
N Channel Power MOSFET SP40N03GNJ Featuring Tested Single Pulse Avalanche Energy and Low Gate Charge
Product Overview The SP40N03GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for high-efficiency applications. It features fast switching speeds, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters, motor control, and portable equipment applications. Product Attributes Brand: Siliup Semiconductor
Siliup SP40N03AGNK Power MOSFET 40V N Channel optimized for DC DC converters and PWM applications
Product Overview The SP40N03AGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N03AGNK Device
650V Super Junction MOSFET Siliup SP47MF65TF for Fast Switching PWM and Power Management Applications
Product Overview The SP47MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 47MF65 Package: TO-247
40 Volt N Channel MOSFET Siliup SP40N08P8 with Low Gate Charge and Single Pulse Avalanche Energy Test
Product Overview The SP40N08P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. It undergoes 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 40N08 Package: SOP-8L
High power handling Siliup 2SK3019A N Channel MOSFET with 60V drain source voltage and ESD protection up to 2KV
Product Overview The 2SK3019A is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device offers ESD protection up to 2KV. Its key applications include battery switches and DC/DC converters, providing reliable performance in compact electronic systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: Siliup Material: Silicon Package Type: SOT-523 Circuit Diagram
20V N Channel MOSFET Siliup SP2300T2 Featuring Low On Resistance and Surface Mount SOT23 Package
SP2300T2 20V N-Channel MOSFET Product Overview The SP2300T2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a surface mount SOT-23 package and is suitable for applications such as battery switches and DC/DC converters. This device offers efficient performance with low on-resistance at various gate drive voltages. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Power Switching N Channel MOSFET Siliup SP010N70P8 100V Low Gate Charge and Low RDSon for UPS Systems
Product Overview The SP010N70P8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, this MOSFET features fast switching, low gate charge, and low RDS(on). It is suitable for hard switched and high frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. The device is tested for 100% single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line:
Power MOSFET Siliup SP015N09GHTQ 150V N Channel Fast Switching Low Gate Charge Device
Product Overview The SP015N09GHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor
80V N Channel Power MOSFET Siliup SP80N03BGHTQ Low RDSon Suitable for Power Supply Applications
Product Overview The SP80N03BGHTQ is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product
Power Switching MOSFET Siliup SP20N03TH 20V N Channel Device with Low RDS on and Fast Switching Speed
Product Overview The SP20N03TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single-pulse avalanche energy. The device is supplied in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
Dual N Channel MOSFET Siliup SP6005ADP8 60V 5.5A Low On Resistance Power Switching Component
Product Overview The SP6005ADP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP6005ADP8 Product Type: Dual N-Channel
60V N Channel Power MOSFET Siliup SP60N10GDNK Featuring Low On State Resistance and High Reliability
Product Overview The SP60N10GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology for fast switching speeds and enhanced performance. This surface mount device is ideal for demanding applications such as DC-DC converters and motor control, offering a continuous drain current of 35A and a low on-state resistance. It features 100% Single Pulse avalanche energy testing for reliability. Product
Low RDS on 40V N Channel MOSFET Siliup SP40N06GNK with Fast Switching and Avalanche Energy Testing
Product Overview The SP40N06GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co.
N Channel MOSFET SP60N03GHTD 60V 140A Low RDSon TO263 Package Ideal for Power Switching Applications
Product Overview The SP60N03GHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a TO-263 package. Product Attributes
High Speed Switching 1200V 240A SiC MOSFET Module Sichainsemi S1P05R120HBB Suitable for UPS Systems
Product Overview The S1P05R120HBB is a 1200V / 240A All-Silicon Carbide (SiC) MOSFET Half-Bridge Module from Qingchun Semiconductor (Ningbo) Co., Ltd. This module is designed for high-speed switching, high power density, and high-frequency operation, offering ultra-low losses. It is suitable for a wide range of applications including servo drives, UPS systems, motor drives, high power converters, photovoltaic systems, wind power generation, and induction heating equipment.
Low On Resistance 30V N Channel MOSFET Siliup SP2304T2J for Power Management Applications
Product Overview The SP2304T2J is a 30V N-Channel MOSFET designed for efficient power management in various electronic applications. Featuring low on-resistance (RDS(on)) at different gate voltages (37m@10V, 57m@4.5V) and a continuous drain current (ID) of 3.3A, this MOSFET is suitable for DC/DC converters and load switching in portable devices. Its TrenchFET Power MOSFET technology ensures high performance and reliability. Product Attributes Brand: Shanghai Siliup Semiconduc
