Single FETs, MOSFETs

quality High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance factory

High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance

Product OverviewThis Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior avalanche and commutation mode energy handling. It is designed for applications requiring low on-resistance, fast switching, and high dv/dt ...

quality Fast Switching Speed ROHS Compliant 60V P Channel MOSFET Siliup SP60P25NK with Surface Mount Package factory

Fast Switching Speed ROHS Compliant 60V P Channel MOSFET Siliup SP60P25NK with Surface Mount Package

Product Overview The SP60P25NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC...

quality 20V P Channel MOSFET Siliup SP2004KT7 Featuring 2KV ESD Protection Suitable for DC DC Converters factory

20V P Channel MOSFET Siliup SP2004KT7 Featuring 2KV ESD Protection Suitable for DC DC Converters

Product Overview The SP2004KT7 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, along with ESD protection up to 2KV. It is designed for applications such as battery switches and DC/DC converters. ...

quality Power Switching MOSFET Siliup SP40N01HTQ 40V N Channel Device with TO 220 3L Package and Low RDS factory

Power Switching MOSFET Siliup SP40N01HTQ 40V N Channel Device with TO 220 3L Package and Low RDS

Product Overview The SP40N01HTQ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse ...

quality Low RDSon 60V N Channel MOSFET Siliup SP60N03GHTH Designed for Fast Switching and Power Switching Applications factory

Low RDSon 60V N Channel MOSFET Siliup SP60N03GHTH Designed for Fast Switching and Power Switching Applications

Product Overview The SP60N03GHTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...

quality Power MOSFET Siliup SP40N01AAGTO 40V N Channel with Low On Resistance and Fast Switching Performance factory

Power MOSFET Siliup SP40N01AAGTO 40V N Channel with Low On Resistance and Fast Switching Performance

Product Overview The SP40N01AAGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy. This MOSFET is ...

quality 20V Complementary MOSFET Siliup SP2012CNJ Featuring Low RDSon and Gate Charge for Power Applications factory

20V Complementary MOSFET Siliup SP2012CNJ Featuring Low RDSon and Gate Charge for Power Applications

Product Overview The SP2012CNJ is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. This device is suitable for applications such as bridges and inverters. It is available in a PDFN3X3-8L package. ...

quality Siliup SP60N01BGHMT Power MOSFET 60V N Channel with Low Gate Charge and High Continuous Drain Current factory

Siliup SP60N01BGHMT Power MOSFET 60V N Channel with Low Gate Charge and High Continuous Drain Current

Product Overview The SP60N01BGHMT is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low Rdson. This MOSFET is ideal for PWM applications, hard-switched and high-frequency ...

quality N Channel MOSFET Siliup SP2302CT2 20V Low On Resistance SOT 23 Package for Battery Switches factory

N Channel MOSFET Siliup SP2302CT2 20V Low On Resistance SOT 23 Package for Battery Switches

Product Overview The SP2302CT2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance and comes in a ...

quality SP015N03BGHTQ 150V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology factory

SP015N03BGHTQ 150V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology

Product Overview The SP015N03BGHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench ...

quality High Frequency MOSFET Siliup SP13HF30TF 300V Super Junction with Fast Switching and Low Gate Charge factory

High Frequency MOSFET Siliup SP13HF30TF 300V Super Junction with Fast Switching and Low Gate Charge

Product Overview The SP13HF30TF is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching, low gate charge, and low Rdson. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM ...

quality 20V P Channel MOSFET Siliup SP2006KNC Designed for Ultra Small Portable Electronics Applications factory

20V P Channel MOSFET Siliup SP2006KNC Designed for Ultra Small Portable Electronics Applications

Product Overview The SP2006KNC is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. ...

quality 100V N Channel Power MOSFET SP010N02BGHTQ with Low Gate Charge and Fast Switching in TO2203L Package factory

100V N Channel Power MOSFET SP010N02BGHTQ with Low Gate Charge and Fast Switching in TO2203L Package

Product Overview The SP010N02BGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, ...

quality power switching solution featuring Siliup SP30N01BGNK 30V N Channel Power MOSFET with low gate charge factory

power switching solution featuring Siliup SP30N01BGNK 30V N Channel Power MOSFET with low gate charge

Product Overview The SP30N01BGNK is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device ...

quality Power Management Applications Slkor SL403 P Channel Enhancement Mode MOSFET with Low On Resistance factory

Power Management Applications Slkor SL403 P Channel Enhancement Mode MOSFET with Low On Resistance

SL403 P-Channel Enhancement Mode MOSFETThe SL403 is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers reliable and rugged performance with low on-resistance and high efficiency. Available in lead-free and green devices, it is RoHS compliant.Product AttributesB...

quality N Channel 135V Power MOSFET Siliup SP013N03GHTO Featuring Low RDS on and Fast Switching for Power Management factory

N Channel 135V Power MOSFET Siliup SP013N03GHTO Featuring Low RDS on and Fast Switching for Power Management

Product Overview The SP013N03GHTO is a 135V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...

quality Power switching and battery management solution Siliup SP010P35GNK 100V P Channel MOSFET with low RDS factory

Power switching and battery management solution Siliup SP010P35GNK 100V P Channel MOSFET with low RDS

Product Overview The SP010P35GNK is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, battery ...

quality Power MOSFET Siliup SP011N02GHTF Featuring Low RDSon and Single Pulse Avalanche Energy Tested Device factory

Power MOSFET Siliup SP011N02GHTF Featuring Low RDSon and Single Pulse Avalanche Energy Tested Device

Product Overview The SP011N02GHTF is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench ...

quality High Current 105A 30V N Channel MOSFET Siliup SP30N02BNK for Motor Control and Power Applications factory

High Current 105A 30V N Channel MOSFET Siliup SP30N02BNK for Motor Control and Power Applications

Product Overview The SP30N02BNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount PDFN5X6-8L package, and 100% single pulse avalanche energy testing. This MOSFET is ROHS Compliant & ...

quality Power MOSFET Siliup SP40N03BTH 40V N Channel Device with Low Gate Charge and Avalanche Energy Rating factory

Power MOSFET Siliup SP40N03BTH 40V N Channel Device with Low Gate Charge and Avalanche Energy Rating

Product Overview The SP40N03BTH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This device is 100% tested for single pulse avalanche energy, making it ...

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