Single FETs, MOSFETs
switching solution Siliup SP010P190TH 100V P Channel MOSFET with low RDS on and tested avalanche energy rating
Product Overview The SP010P190TH is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient performance, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications ...
Complementary MOSFET Device Siliup SP4606BCP8 with 30V Drain Source Voltage Lead Free Surface Mount
Product Overview The SP4606BCP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead...
60V P Channel MOSFET Siliup SP60P30TH featuring fast switching and low gate charge for load switching
Product Overview The SP60P30TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load ...
Dual N Channel MOSFET Siliup SP8205DTS 20V 5A Drain Current SOT23 6L Package Silicon Semiconductor
Product Overview The SP8205DTS is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product ...
Low RDS on N Channel MOSFET Siliup SP011N02GHTO 110V Rated for High Frequency and Power Management Applications
Product Overview The SP011N02GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
Low Gate Charge 150V N Channel Power MOSFET Siliup SP015N04AGHTO for Power Conversion Applications
Product Overview The SP015N04AGHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is designed for applications requiring high efficiency and ...
Surface Mount SOT 223 Package N Channel MOSFET Siliup SP6003TC Featuring 3A Continuous Drain Current Rating
Product Overview The SP6003TC is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical on-resistance of 80m at 10V ...
20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package
Product Overview The SP2006KT5 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a surface mount package and ESD protection of 2KV. This MOSFET is ideal for applications such as battery switches and DC/DC ...
Power Management MOSFET Siliup SP30N04NJ 30V N Channel with Fast Switching and Low RDS on Resistance
Product Overview The SP30N04NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and low on-resistance, with key parameters like RDS(on)TYP at 4.2m@10V and 5.7m@4.5V. It is 100% tested for ...
100V N Channel MOSFET Siliup SP010N08GTH with Fast Switching Speeds and Low Drain Source Resistance
Product Overview The SP010N08GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for power switching applications, battery ...
Switching MOSFET Siliup SP4N90TG 900V N Channel Device with Low RDS on and Fast Switching Speeds
Product Overview The SP4N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and a low RDS(on) of 3.6 at 10V. It is ideally suited for DC...
High Voltage N Channel Planar MOSFET Siliup SP1N30T1 with Fast Switching and Low Gate Charge Features
Product Overview The SP1N30T1 is a 300V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low Rdson, making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. This device is ...
Silicon Carbide MOSFET Siliup SP25N120CTK 1200V Low On Resistance Device for Photovoltaic Inverters
Product Overview The SP25N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances and high blocking voltage. It offers low RDS(on), ease of paralleling, and simple driving characteristics, ...
Power Control Siliup 2N7002KBDW Dual N Channel MOSFET with High Saturation Current and ESD Protection
Product Overview The 2N7002KBDW is a 60V dual N-Channel MOSFET featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small signal switch, offering a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is suitable ...
Dual N Channel MOSFET Siliup SP30N08DP8 30V 10A Power Switching Device with Low Gate Charge
Product Overview The SP30N08DP8 is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, it features fast switching, low gate charge, and low Rdson. Its 100% single pulse avalanche energy test ensures reliability in demanding ...
N Channel 30V MOSFET Siliup SP30N01AAGTO Featuring Fast Switching Low RDS on and Single Pulse Avalanche Energy Test
Product Overview The SP30N01AAGTO is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
Power Switching MOSFET Siliup SP30N08P8 30V N Channel Device with Low RDS on and Fast Switching
Product Overview The SP30N08P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) at various gate voltages, making it suitable for hard-switched and high-frequency circuits, ...
650V Silicon Carbide MOSFET Siliup SP75N65CTF Designed for High Current and High Voltage Applications
Product Overview The SP75N65CTF is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances. It offers high blocking voltage combined with low RDS(on), making it easy to parallel and simple to drive. This ...
SP010N02BGHTD 100V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology
Product Overview The SP010N02BGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
40V P Channel MOSFET Siliup SP40P25TH Featuring Low Gate Charge and High Avalanche Energy Capability
Product Overview The SP40P25TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche ...
