Single FETs, MOSFETs
switching MOSFET MASPOWER MS100N60ICC0 with 650V drain source voltage and 100A continuous drain current
Product OverviewThe MS100N60ICB3(C0) is a high-performance N-channel Power MOSFET from Maspower, designed for demanding power applications. It features ultra-low RDS(on) of 33.5m (typ.) and ultra-low gate charge, with 100% UIS tested for reliability. This RoHS compliant component is ideal for Power ...
Power MOSFET MATSUKI ME95N03-G Featuring Low RDS ON and High Continuous Drain Current for Electronics
Product Overview The ME95N03 is an N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as LCD inverters, computer power ...
MOSFET MASPOWER MS120P20HDC1 featuring low RDSon 55m and 200V drain source voltage for power supplies
Product OverviewThe MS120P20HDC1 is a high-performance Maspower MOSFET designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications. It features a VDS of -200V, ID of -120A, and a low RDS(on) of 55m at -1A. Key advantages ...
Compact sot 23 package n channel power mosfet LRC LBSS123LT1G with ppap capability and pb free option
Product Overview The LESHAN RADIO COMPANY, LTD. LBSS123LT1G is a N-CHANNEL POWER MOSFET in a SOT-23 package. It offers a Pb-Free package option and is available in automotive-grade (S- prefix) variants that are AEC-Q101 Qualified and PPAP Capable. This device is suitable for various applications ...
MASPOWER MS60N350DD1 N channel MOSFET for power factor correction and power management solutions
Product OverviewThe MS60N350DD1 is a high-performance N-channel MOSFET from Maspower, designed for demanding power applications. It features a VDS of 60V and an ID of 30A, with a low RDS(ON) of 35m at VGS=10V. Its Super High Dense Cell Design ensures reliability and ruggedness, making it suitable ...
N Channel MOSFET LRC L2SK801LT1G Featuring Switching and Low On Resistance in Pb Free SOT 23 Package
Product Overview The LESHAN RADIO COMPANY, LTD. L2SK801LT1G is a Small Signal N-Channel MOSFET designed for various electronic applications. This device features a SOT-23 (TO-236AB) package, offering a 310 mAmps continuous drain current and 60 Volts drain-source voltage. It is characterized by its ...
High speed switching N channel MOSFET MagnaChip Semicon MDD14N25CRH with 0.28 ohm RDS ON and 250V VDS
Product OverviewThe MDD14N25C is an N-channel MOSFET manufactured using MagnaChip's advanced MOSFET technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features ...
Vertical DMOS N Channel FET MICROCHIP TN0104N3 G Designed for Solid State Relays and Battery Systems
Product OverviewThe TN0104 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling of bipolar transistors with the ...
P Channel Enhancement Mode MOSFET LRC LP3407LT1G 30V Low RDS ON Ideal for Load Switch and PWM Applications
Product Overview The LP3407LT1G is a 30V P-Channel Enhancement-Mode MOSFET manufactured by LESHAN RADIO COMPANY, LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for load switch and PWM applications. This device is available in the SOT23 ...
MCC SI2305B TP P Channel MOSFET with Gate Source Voltage of 10 Volts and Moisture Sensitivity Level 1
Product Overview The SI2305B is a P-Channel MOSFET designed for various applications. It features low RDS(ON) and meets UL 94 V-0 flammability rating. This device is moisture sensitivity level 1 and is RoHS compliant, with a halogen-free option available. It operates within a junction temperature ...
Power MOSFET ME55N06A N Channel 75 Volt Drain Source Voltage for Small Outline Surface Mount Devices
Product OverviewThe ME55N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power ...
N Channel small signal MOSFET LRC LNTK2575LT1G featuring ESD protection and SOT 23 3 lead package
Product Overview The LESHAN RADIO COMPANY, LTD. LNTK2575LT1G is a single, N-Channel, small signal MOSFET with ESD protection, housed in a SOT-23 (3-Leads) package. It features advanced planar technology for fast switching and low RDS(on), contributing to higher efficiency and extended battery life. ...
Single N Channel Trench MOSFET Semiconductor 100V MagnaChip Semicon MDF1922TH for Power Dissipation
MDF1922 Single N-Channel Trench MOSFET 100V The MDF1922 utilizes Magnachip's advanced MOSFET Technology, offering superior on-state resistance and fast switching performance. This MOSFET is ideal for synchronous rectification in server/adapter applications and general-purpose use. Product Attributes ...
Low On State Resistance Power Transistor MATSUKI ME20N15 N Channel DMOS Trench Technology for Switching
Product OverviewThe ME20N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones and notebook ...
N Channel MOSFET LRC LN8342DT1AG 30 Volt Low RDS on Trench Technology for Power Routing Applications
Product Overview The LN8342DT1AG is a high-performance N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and ...
MDD Microdiode Semiconductor MDD2002KT 20V N channel MOSFET suitable for load switching applications
Product DescriptionThis 20V N-channel MOSFET is based on MDD's unique device design, achieving low RDS(on), fast switching, and good ESD rating performance. It is suitable for load switching in portable devices, battery-powered systems, DC-DC converters, and LCD display inverters.Product AttributesB...
Low On State Resistance MOSFET LRC LDN3408ET1G 30V N Channel Enhancement Mode Device for Electronics
Product Overview The LDN3408ET1G and S-LDN3408ET1G are 30V N-Channel Enhancement Mode MOSFETs designed for various applications. These devices offer excellent ESD protection (2KV HBM) and low on-state resistance (RDS(ON)) across different gate-source voltages and drain currents. They are RoHS ...
power MOSFET MASPOWER MS30N100HGC0 offering low on resistance below 0.38 and 1000V voltage rating
Product OverviewThe MS30N100HGC1/C0 H1.06 Maspower is a high-performance power semiconductor designed for demanding applications. It features a high breakdown voltage of 1000V and a continuous drain current of 30A, with a low on-resistance of less than 0.38. This device is avalanche tested and ...
P Channel DMOS trench technology transistor MATSUKI ME2301 designed for power management solutions
Product OverviewThe ME2301 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Power switching MOSFET MCC 2SK3018-TP with low input capacitance and wide operating temperature range
Product Overview The SK3018 is a MOSFET designed for low on-resistance and low input capacitance. It meets UL 94V-0 flammability rating and is available in RoHS compliant and Halogen Free (suffix 'FH') options. This device is suitable for applications requiring efficient power switching with a wide ...
