Single FETs, MOSFETs

Product OverviewThe JX3400AS3 is an N-Channel Enhancement Mode MOSFET featuring 30V MOSFET technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications.Product AttributesBrand: JX (implied from part number and URL)Origin: ...

Product OverviewThe AO6601 (KO6601) is a complementary trench MOSFET designed for various applications. It offers both N-channel and P-channel configurations, providing flexibility for circuit design. Key features include a drain-source voltage of 30V for N-channel and -30V for P-channel, with ...

Product OverviewThis 4A, 900V N-Channel MOSFET from KIA SEMICONDUCTORS, model 4390A, utilizes a proprietary new planar technology to offer low gate charge for minimized switching loss and a fast recovery body diode. It is designed for applications such as CRT, TV/Monitor, and other general-purpose ...

Product Overview The 2N7002W is a MOSFET transistor designed for general-purpose applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various switching and amplification tasks in electronic circuits. Product ...

Product OverviewThe KIA SEMICONDUCTORS KNX42120A is a 3.0A, 1200V N-CHANNEL MOSFET designed for various power applications. It features low gate charge for minimized switching loss and a fast recovery body diode. Key advantages include RoHS compliance and a typical RDS(ON) of 7.0 at VGS=10V. This ...

Product OverviewThe N-Channel 20-V(D-S) TrenchFET Power MOSFET (Model: KSI2302W) is designed for load switching in portable devices and DC/DC converters. It features a SOT-323 plastic-encapsulated package and offers efficient power management capabilities.Product AttributesBrand: YongyutaiModel: ...

Product OverviewThe KIA SEMICONDUCTORS 4365A is a 650V N-CHANNEL MOSFET designed for high-frequency switching mode power supplies, uninterruptible power supplies (UPS), and electronic ballasts. It features a low on-resistance (RDS(ON) typ.=2.0 @VGS=10V,ID=2A), fast switching speeds, and is 100% ...

Product OverviewThis 10A, 450V N-Channel MOSFET from KIA SEMICONDUCTORS, model KNF6145A, utilizes proprietary new planar technology for high performance. It offers a low ON-resistance of 0.39 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal ...

Product OverviewN-Channel 30-V(D-S) MOSFET featuring TrenchFET technology for exceptional on-resistance and maximum DC current capability. Designed with a high-dense cell structure for extremely low RDS(ON), this MOSFET is ideal for load switching in portable devices and DC/DC converters.Product ...

Product OverviewThis P-CHANNEL MOSFET, rated at -10A and -150V, features advanced high cell density Trench technology for minimized conductive loss and fast switching due to low Gate Charge. It offers low thermal resistance and is 100% Avalanche and DVDS tested. Applications include MB/VGA Vcore, ...

Product OverviewThe SI2308DS (KI2308DS) is an N-Channel MOSFET designed for various electronic applications. It offers a high drain-source voltage of 60V and a continuous drain current of up to 2A. With low on-resistance values (RDS(ON) < 160m at VGS=10V), it provides efficient power handling. This ...

Product OverviewThis 650V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 65R700, is engineered with advanced super-junction technology. It is optimized to reduce conduction losses, enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation ...

Product OverviewThe BSS138AF7 is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON) and extremely low threshold voltage. It offers ESD protection and meets UL 94 V-0 flammability rating, making it a rugged and reliable component for various applications.Product AttributesFlamma...

P-CHANNEL MOSFET -3.5A, -20V This P-Channel MOSFET from KIA SEMICONDUCTORS is designed for various applications requiring a -20V drain-source voltage and a continuous drain current of -3.5A. It offers low on-resistance at different gate-source voltages, making it suitable for switching and ...

Product OverviewThe 2SK3018 is a Silicon N-channel MOSFET designed for applications requiring low on-resistance and fast switching speeds. Its simple drive circuit requirements make it suitable for various electronic designs.Product AttributesBrand: Kexin (implied by website)Origin: China (implied ...

Product Overview The 60V N-Channel Enhancement Mode MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible ...

Product OverviewThe KCX3406A is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's LVMOS technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is ideal for secondary synchronous ...

Product OverviewThe FDC3612-HF is an N-Channel MOSFET designed for efficient power switching applications. It features a high breakdown voltage of 100V and a continuous drain current of 2.6A. With low on-resistance values (RDS(ON) < 125m at VGS=10V) and fast switching speeds, this MOSFET is suitable ...

Product OverviewThis 15A, 100V N-Channel MOSFET is manufactured using KIA's advanced planar stripe TRENCH technology. This technology is designed to minimize conduction loss, offer superior switching performance, and ensure high energy pulse withstand capability in avalanche and commutation modes. ...

Product OverviewThe KIA SEMICONDUCTORS KNX7650A is a 25A, 500V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for high-efficiency applications such as BLDC motor drivers, electric welders, ...