Single FETs, MOSFETs
Power MOSFET JSMSEMI IRFR5305-JSM P Channel 60 Volt TrenchFET Technology Load Switching Device
JSMICRO Semiconductor IRFR5305 P-Channel 60 V (D-S) MOSFET The JSMICRO IRFR5305 is a P-Channel TrenchFET Power MOSFET designed for load switching applications. Its advanced TrenchFET technology offers improved performance and efficiency. This device is suitable for applications requiring a 60V drain...
Power Switching N Channel MOSFET JSCJ CJU15SN10 Featuring Low RDS ON and Excellent Heat Dissipation
Product Overview The CJU15SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include an ...
Compact Power N Channel MOSFET JSCJ CJ2312 with 20 Volt Drain Source Voltage and Thermal Performance
Product Overview The CJ2312 is a N-Channel 20-V(D-S) MOSFET in a SOT-23 package, designed for DC/DC converters and load switching in portable applications. It offers efficient power handling with a maximum power dissipation of 0.35 W and a junction temperature up to 150C. Product Attributes Brand: ...
dual N Channel MOSFET JSCJ CJQ4824 ideal for load switch and PWM applications in electronic systems
Product OverviewThe CJQ4824 is a dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for use as a load switch or in PWM applications.Product AttributesBrand: JIANGSU CHANGJING ...
Power MOSFET JSCJ CJS2016 Featuring Low Gate Charge and High Current Capacity for Electronic Devices
Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Dual N-Channel MOSFET (CJS2016) is a high-performance power MOSFET designed for surface mount applications. It features TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling ...
Power MOSFET JSCJ CJ1012 C Single N Channel Device Featuring Low Threshold Voltage and ESD Protection
Product OverviewThe CJ1012 is a Single N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed using an advanced Power Trench process to optimize RDS(ON). This MOSFET offers high-side switching, low on-resistance, low threshold voltage, and fast switching speed, ...
Low Gate Charge P Channel Field Effect Transistor JSCJ CJMP3009 Designed for PWM and Load Switch Circuits
Product OverviewThe CJMP3009 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., ...
switching device JSCJ CJU40N10 N Channel Power MOSFET with ultra low RDS on and avalanche capability
Product Description This advanced high voltage N-Channel Power MOSFET is designed for high energy applications in avalanche mode and efficient switching. It features a fast recovery time for its drain-to-source diode. Ideal for high voltage, high-speed switching applications such as power supplies, ...
Power MOSFET JSCJ CJT03P10 P Channel Type with Superior Thermal Resistance and SOT 223 Package Design
Product OverviewThe CJT03P10 is a P-Channel Power MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON) and it is fully characterized for avalanche voltage and current. The SOT-223 package provides excellent heat ...
Dual N Channel MOSFET JSCJ CJND2004 with Common Drain Configuration and Plastic Encapsulated Package
Product DescriptionThe CJND2004 is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration.Product ...
P Channel MOSFET for Surface Mount Applications Low RDS on JSCJ CJBB3139K DFN1006 3L A Package Device
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L-A Plastic-Encapsulate MOSFETs CJBB3139K P-Channel MOSFETThe CJBB3139K is a P-Channel MOSFET in a DFN1006-3L-A package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD ...
N Channel Power MOSFET JSCJ CJAB3R9SN04C with Low On State Resistance and High Pulsed Drain Current
Product OverviewThe CJAB3R9SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is optimized for minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. ...
JSMSEMI FDS4675 NL JSM P Channel Enhancement Mode MOSFET Designed for Low RDS ON and Power Electronics
Product OverviewThe FDS4675-NL is a -40V P-Channel Enhancement Mode MOSFET designed for reliable and rugged performance. It features low on-state resistance, with RDS(ON) of 13m (typ.) at VGS=-10V and 18m (typ.) at VGS=-4.5V. This device is suitable for power management applications, particularly in ...
N Channel Power MOSFET JSCJ CJU04N65 650V 4A TO252 Package Suitable for DC DC Converter Applications
Product OverviewThe CJU04N65 is an N-channel mode power MOSFET utilizing advanced planar stripe technology. This design ensures minimal on-state resistance and superior switching performance, with the capability to withstand high energy pulses in avalanche and commutation modes. It is ideal for high...
Dual N Channel MOSFET JSCJ CJL8820 Featuring ESD Protection and Suitable for Load Switch Applications
Product OverviewThe CJL8820 is a dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is ...
Power Dual N Channel TrenchFET Power MOSFET JSCJ CJL2322 for Commercial and Industrial Applications
Product OverviewThe CJL2322 is a Dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for DC/DC converters, load switches in portable devices, and various commercial and industrial applications. The ...
Surface Mount Dual N Channel MOSFET JSCJ CJS2013 Featuring Low Gate Charge and High Power Capability
Product OverviewThe CJS2013 is a Dual N-Channel MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. It is suitable for applications such as battery protection, load switching, and power ...
Surface Mount N Channel MOSFET with Low RDS on and ESD Protection JSCJ CJBA3541K in DFN1006 3L Package
Product OverviewThe CJBA3541K is an N-Channel MOSFET in a DFN1006-3L surface mount package. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This lead-free product is designed for load/power switching, interfacing switching, battery ...
P Channel Power MOSFET JSCJ CJ3139KW with Plastic Encapsulate Package and Low Gate Threshold Voltage
Product OverviewThe CJ3139KW is a P-Channel Power MOSFET designed using an advanced Power Trench process to optimize RDS(ON). It features high-side switching, low on-resistance, low threshold voltage, and fast switching speed, making it suitable for various driver applications, battery-operated ...
High Current N Channel MOSFET JSMSEMI JSM2050 with Low RDS ON and Enhanced Power Management Features
Product DescriptionThe JSM2050 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This high power and current handling capability makes it suitable for applications such ...
