Single FETs, MOSFETs

Product Overview The DMG1012UW is an N-channel enhancement mode MOSFET designed for a wide range of applications. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds. This device also features low input/output leakage and is ESD protected up to 2kV. It is a totally lead-free, fully RoHS compliant, and halogen/antimony-free Green device. For automotive applications requiring specific change control, please contact Diodes

Product Overview The Diodes Incorporated 2N7002K is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power-management applications, including motor controls and backlighting. Key features include low input capacitance, fast switching speed, low input/output leakage, and ESD protection up to 2kV. This device is also Totally Lead-Free &

Product Overview The Diodes Incorporated DMN30H4D0L is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications. Product Attributes Brand: Diodes Incorporated Product Line: NEW PRODUCT Material:

Product Overview The Diodes Incorporated DMN3008SFG is a 30V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. It excels in minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for backlighting, power management functions, and DC-DC converters, this MOSFET offers a low RDS(ON) for reduced on-state losses and a small, thermally efficient package that enables higher density and smaller end

Product Overview The Diodes Incorporated BSS84DWQ is a dual P-channel enhancement mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified and PPAP capable, making it ideal for general-purpose interfacing switches, power management functions, and analog switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed. This device is also environmentally friendly,

BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Overview The BSS138K is a 50V N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power-management applications, including load switches. Key features include low on-resistance, low input capacitance, fast switching speed, and an ESD-protected gate. The device is also Totally Lead-Free,

Product OverviewThe ESE3401 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.Product AttributesBrand: ElecSuperMaterial: Halogen freeCertifications: UL 94V-0Color: Not specifiedOrigin: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitAbsolute

Product Overview The DMP2305U is a P-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance at multiple gate-source voltages, low input capacitance, and fast switching speeds. The device also offers low input/output leakage and is manufactured as a totally lead-free and fully RoHS compliant component. It is also Halogen and Antimony free, designated as a "Green" device. For automotive applications requiring specific change control,

Product Overview The DMP3099L is a P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, general power management functions, and DC-DC converters. Key features include low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is

Product Overview The Diodes Incorporated DMN6075S is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) while maintaining superior switching performance. Key applications include DC-DC converters and power management functions. This device is characterized by its low input capacitance, fast switching speed, and is manufactured as a totally lead-free, fully RoHS

Product Overview The DMN60H080DS is a new generation N-channel enhancement mode Field-Effect MOSFET utilizing advanced planar technology. It offers excellent high voltage and fast switching capabilities, making it an ideal choice for small-signal and level shift applications. This device is designed for various applications including motor controls, backlighting, DC-DC converters, and power-management functions. Key features include low input capacitance, a high BVDSS rating

Product Overview The DMC2990UDJQ is a complementary pair of enhancement mode MOSFETs designed to meet the stringent requirements of automotive applications. Qualified to AEC-Q101 standards and supported by PPAP, these MOSFETs are ideal for general-purpose interfacing switches, power management functions, and analog switches. Key features include low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speed, and an ultra-small surface mount

Diodes Incorporated DMN2056U 20V N-Channel Enhancement Mode MOSFET Product Overview The Diodes Incorporated DMN2056U is a 20V N-channel enhancement mode MOSFET designed to offer low on-state resistance (RDS(on)) and superior switching performance. This makes it an ideal component for high-efficiency power management applications, including battery charging, power management functions, DC-DC converters, and portable power adaptors. It features low gate threshold voltage, low

DMN6140L - 60V N-Channel Enhancement Mode MOSFET Product Overview The DMN6140L is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters and power management functions, this MOSFET offers low input capacitance, fast switching speed, and low input/output leakage. It is also Totally Lead-Free & Fully RoHS

Product Overview The Diodes Incorporated DMN3023L is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications such as load switches, DC-DC converters, and general power management functions. It features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The

Product Overview DMP2240UW is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features low on-resistance at different gate-source voltages (-4.5V, -2.5V, -1.8V), a very low gate threshold voltage (VGS(th) 1V), low input capacitance, and fast switching speeds. The device also offers low input/output leakage and is lead-free and RoHS compliant. It is qualified to AEC-Q101 standards for high reliability. Product Attributes Brand: Diodes

Product Overview The DMP4047LFDE is a new generation P-CHANNEL ENHANCEMENT MODE MOSFET designed for high-efficiency power-management applications. It excels at minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for general-purpose interfacing switches, load switching, battery-management applications, and power-management functions, this device offers a low profile (0.6mm) and a compact PCB footprint of 4mm2. It features a low gate

Product OverviewThe AON6204(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating.Product AttributesBrand: ElecSuperModel: AON6204(ES)Package: PDFN5*6-8LMaterial: Halogen free, Pb-freeCertifications: UL 94V-0Origin: ElecSuper IncorporatedTechn

Product Overview The ZXMN10A07F is a 100V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, motor control, and disconnect switches. Product Attributes Brand: Diodes Incorporated Product Line: A Product Line of Diodes Incorporated Package: SOT23 Material: Molded Plastic, "Green" Molding

Product Overview The Diodes Incorporated DMN3067LW is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high efficiency power management applications. Key features include low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, all within a small surface mount package. The device is ESD protected and