Single FETs, MOSFETs

quality P Channel Enhancement Mode MOSFET DIODES DMP2165UW 7 for Power Management Motor Control Applications factory

P Channel Enhancement Mode MOSFET DIODES DMP2165UW 7 for Power Management Motor Control Applications

Product Overview The DMP2165UW is a P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for motor control and power management functions, this device offers low input capacitance, fast switching speed, and low input/output leakage. It is also Totally Lead-Free & Fully RoHS Compliant, and a Halogen and Antimony Free Green Device. Product

quality P Channel Enhancement Mode MOSFET Diodes DMP3098LQ 7 with Low On Resistance and Fast Switching Speed factory

P Channel Enhancement Mode MOSFET Diodes DMP3098LQ 7 with Low On Resistance and Fast Switching Speed

Product Overview The DMP3098LQ is a new generation P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high efficiency power management applications, including power management functions, analog switches, load switches, and boost switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output

quality Diodes DMN6068SE 13 60V N channel MOSFET ideal for transformer driving switches and DC DC converters factory

Diodes DMN6068SE 13 60V N channel MOSFET ideal for transformer driving switches and DC DC converters

Product Overview The Diodes Incorporated DMN6068SEQ is a 60V N-channel enhancement mode MOSFET designed for demanding automotive applications. It meets stringent AEC-Q101 qualification standards, is PPAP capable, and manufactured in IATF 16949 certified facilities. This MOSFET offers low on-resistance and fast switching speeds, making it ideal for motor controls, transformer driving switches, DC-DC converters, power-management functions, and uninterrupted power supplies. It

quality Vertical DMOS FET P Channel Enhancement Mode DIODES ZVP3306A with High Pulsed Drain Current and Low On State Resistance factory

Vertical DMOS FET P Channel Enhancement Mode DIODES ZVP3306A with High Pulsed Drain Current and Low On State Resistance

Product Overview This P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET is designed for various applications requiring a 60 Volt VDS rating and a low on-state resistance of 14. It offers a continuous drain current of -160 mA at 25C ambient temperature and a pulsed drain current capability of -1.6 A. The device operates within a wide temperature range of -55 to +150 C, making it suitable for demanding environments. Key electrical characteristics include a Drain-Source Breakdown

quality Fully RoHS Compliant Green Device DIODES DMG2305UXQ 7 P Channel MOSFET for Automotive and Industrial factory

Fully RoHS Compliant Green Device DIODES DMG2305UXQ 7 P Channel MOSFET for Automotive and Industrial

Product Overview The DMG2305UXQ is a P-Channel Enhancement Mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified and PPAP capable, making it ideal for use in backlighting, power management functions, DC-DC converters, and motor control. Key features include low on-resistance, low input capacitance, and fast switching speed. This device is also totally lead-free, fully RoHS compliant, and halogen and antimony-free,

quality 60 Volt VDS Rating DIODES ZVP3306FTA P Channel Enhancement Mode Vertical DMOS FET in SOT23 Package factory

60 Volt VDS Rating DIODES ZVP3306FTA P Channel Enhancement Mode Vertical DMOS FET in SOT23 Package

Product Overview The ZVP3306F is a P-Channel enhancement mode vertical DMOS FET designed for various applications. It features a 60 Volt VDS rating and a low RDS(on) of 14 Ohms. This device is complementary to the ZVN3306F and is supplied in a SOT23 package. Product Attributes Package Type: SOT23 FET Type: P-Channel Enhancement Mode Vertical DMOS Complementary Type: ZVN3306F Part Marking Detail: ML Technical Specifications Parameter Symbol Min. Max. Unit Conditions Drain

quality Low RDS ON P Channel Enhancement Mode Transistor Doeshare DP3415 Featuring Trench Power LV MOSFET and ESD Protection factory

Low RDS ON P Channel Enhancement Mode Transistor Doeshare DP3415 Featuring Trench Power LV MOSFET and ESD Protection

Product Overview The DP3415 is a P-Channel Enhancement Mode Field Effect Transistor designed with Trench Power LV MOSFET technology. It features a high-density cell design for low RDS(ON), high-speed switching capabilities, and ESD protection up to 2.0KV (HBM). This device is suitable for applications such as battery protection, load switches, and power management. Product Attributes Brand: DOESHARE Device Type: P-Channel Enhancement Mode Field Effect Transistor Technology:

quality High reliability DIODES DMG6602SVT 7 MOSFET fully RoHS compliant and qualified to AEC Q101 standards factory

High reliability DIODES DMG6602SVT 7 MOSFET fully RoHS compliant and qualified to AEC Q101 standards

Product Overview The DMG6602SVT is a new generation complementary pair enhancement mode MOSFET designed for high-efficiency power management applications. It minimizes on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for backlighting, DC-DC converters, and power management functions, this device offers low input capacitance, fast switching speed, and low input/output leakage. It is totally lead-free, fully RoHS compliant, halogen and

quality DIODES ZVN3320FTA vertical mosfet designed for low on resistance and switching in power management systems factory

DIODES ZVN3320FTA vertical mosfet designed for low on resistance and switching in power management systems

ZVN3320F N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET Product Overview The ZVN3320F is a high-performance N-channel enhancement mode vertical MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including DC-DC converters, power management functions, battery-operated systems, and solid-state relays. It also serves as a versatile driver for relays,

quality Low RDS ON P Channel MOSFET Diodes DMP3013SFV 7 Ideal for DC DC Converters and Backlighting Systems factory

Low RDS ON P Channel MOSFET Diodes DMP3013SFV 7 Ideal for DC DC Converters and Backlighting Systems

Product Overview The DMP3013SFV is a P-Channel Enhancement Mode MOSFET designed to achieve minimal on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, general power management functions, and DC-DC converters. Its compact and thermally efficient PowerDI3333-8 package enables higher density end products, occupying significantly less board space

quality Diodes dmp4025sfg 13 40V p channel mosfet with molded plastic green molding compound and low losses factory

Diodes dmp4025sfg 13 40V p channel mosfet with molded plastic green molding compound and low losses

Product Overview The DMP4025SFG is a 40V P-CHANNEL ENHANCEMENT MODE MOSFET designed to minimize on-state resistance and optimize switching performance. This makes it an ideal component for high-efficiency power management applications, including motor controls, backlighting, DC-DC converters, and printer equipment. Key benefits include reduced conduction and switching losses, and a "Green" device designation, being totally lead-free, fully RoHS compliant, and halogen and

quality Diodes DMG2302UK 7 N Channel Enhancement Mode MOSFET with Low On Resistance and High Switching Speed factory

Diodes DMG2302UK 7 N Channel Enhancement Mode MOSFET with Low On Resistance and High Switching Speed

Product Overview The Diodes Incorporated DMG2302UK is an N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for backlighting, power management functions, DC-DC converters, and motor control. This device features low input capacitance, fast switching speed, and an ESD protected gate. It is also totally lead-free, fully RoHS

quality Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and level shift applications factory

Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and level shift applications

Product Overview The Diodes Incorporated BSS127 is a new generation N-channel enhancement mode Field-Effect MOSFET utilizing advanced planar technology. It offers excellent high voltage and fast switching capabilities, making it ideal for small-signal and level shift applications. This device is designed for applications such as motor control, backlighting, DC-DC converters, and power management functions. Key features include low input capacitance, a high BVDSS rating for

quality Diodes DMN3053L 7 N Channel MOSFET with Low Input Output Leakage and Qualified to AEC Q101 Standards factory

Diodes DMN3053L 7 N Channel MOSFET with Low Input Output Leakage and Qualified to AEC Q101 Standards

Product Overview The Diodes Incorporated DMN3053L is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including load switches, DC-DC converters, and other power management functions. It offers low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device

quality DIODES 2N7002DW 7 F ultra small surface mount MOSFET with low input capacitance and high reliability factory

DIODES 2N7002DW 7 F ultra small surface mount MOSFET with low input capacitance and high reliability

Product Overview The 2N7002DW is a dual N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications such as motor control and power management functions. It offers low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is ultra-small, surface-mountable, and is totally lead

quality N channel enhancement mode vertical DMOS FET DIODES ZVNL120A with 200 Volt VDS and low on resistance factory

N channel enhancement mode vertical DMOS FET DIODES ZVNL120A with 200 Volt VDS and low on resistance

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Overview This N-channel enhancement mode Vertical DMOS FET is designed for applications requiring high voltage and low on-resistance. With a 200 Volt VDS rating and an RDS(on) of 10 Ohms, it is suitable for use in telephone handsets and other general-purpose switching applications. Its low threshold voltage simplifies driving circuitry. Product Attributes Type: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Package Compatibil

quality Power MOSFET DIODES ZXMP4A16GTA featuring low on resistance and halogen free green molding compound for automotive factory

Power MOSFET DIODES ZXMP4A16GTA featuring low on resistance and halogen free green molding compound for automotive

Product Overview The ZXMP4A16G is an advanced 40V P-channel enhancement mode MOSFET designed for high-efficiency power management applications. It excels in minimizing on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for DC-DC converters and power management functions, this device offers low input capacitance, fast switching speeds, and is manufactured with a lead-free, halogen- and antimony-free "Green" molding compound. It is suitable

quality Power Management MOSFET Diodes DMN1019USN 7 N Channel with Superior Switching and Gate ESD Protection factory

Power Management MOSFET Diodes DMN1019USN 7 N Channel with Superior Switching and Gate ESD Protection

Product Overview The Diodes Incorporated DMN1019USN is a new generation N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It features minimized on-state resistance (RDS(ON)) and superior switching performance, making it ideal for load switches, DC-DC converters, and power management functions. This device offers ESD protection for its gate and is manufactured to be totally lead-free and fully RoHS compliant, as well as Halogen and

quality power device DIODES DMP10H400SE-13 100V P Channel MOSFET with low on resistance and fast switching capabilities factory

power device DIODES DMP10H400SE-13 100V P Channel MOSFET with low on resistance and fast switching capabilities

Product Overview The Diodes Incorporated DMP10H400SE is a 100V P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance while maintaining superior switching performance, making it ideal for motor control, DC-DC converters, power management functions, and uninterruptible power supplies. This device features low gate drive, low input capacitance, and fast switching speed. It is also Totally Lead-Free & Fully

quality Low RDS on P channel MOSFET DIODES DMP6023LSS 13 designed for power management and DC DC converters factory

Low RDS on P channel MOSFET DIODES DMP6023LSS 13 designed for power management and DC DC converters

Product Overview The DMP6023LSS is a 60V P-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including backlighting, power management functions, and DC-DC converters. It features low on-resistance, fast switching speed, low threshold, low gate drive, and low input capacitance. The device is Totally Lead-Free & Fully RoHS