Single FETs, MOSFETs

Product Overview The BMx12N60 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC., designed with advanced planar process technology. It offers a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 12A, with a typical on-resistance (RDS(ON)) of 0.56 at VGS=10V. This MOSFET is characterized by its fast switching speeds and good EMI performance, making it suitable for various power management applications, including load switching and PWM

Product Overview The Bruckewell MS34P01 is a P-Channel 30-V (D-S) MOSFET designed using advanced processing techniques to achieve extremely low on-resistance and high efficiency. This cost-effective device is ideal for commercial-industrial surface mount applications and low voltage scenarios such as DC/DC converters. It meets RoHS and Green Product requirements, offering full function reliability. Product Attributes Brand: Bruckewell Technology Corporation Product Type: P

Product Overview The BMI403NP1136 is a high-performance N+P-Channel MOSFET designed for various electronic applications. It features enhancement mode operation, very low on-resistance, and fast switching capabilities. This device is Pb-free and RoHS compliant, ensuring environmental responsibility. It is available in a TO-252-4L package. Product Attributes Brand: BMI Channel Type: N+P-Channel Mode: Enhancement Lead Plating: Pb-free Compliance: RoHS compliant Package: TO-252

Product Overview The BRCS3401MCQ is a P-Channel MOSFET in a SOT23-3 plastic package, designed for high reliability and automotive applications. It meets AEC-Q101 standards and is a halogen-free product. This device is suitable for use as a load switch or in Pulse Width Modulation (PWM) applications, fulfilling the stringent requirements of automotive environments. Key electrical characteristics include a VDS of -30V, ID of -4.2A at VGS = -10V, and low on-state resistance (RDS

Product Overview The SI2302 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, making it suitable for various electronic applications requiring efficient power switching. Key electrical characteristics include a drain-source breakdown voltage of 20V and low on-state resistance values of 30m at VGS = 4.5V and 37m at VGS = 2.5V. The device is designed

Product Overview The BRCS080N10SDP is an N-channel MOSFET in a TO-252 plastic package, designed for high-frequency switching and synchronous rectification applications. It offers a Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 68A. Key features include low on-resistance at both 10V (8m Typ. 6.2m) and 4.5V (12m Typ. 8.2m), and it is a Halogen-Free (HF) product. Product Attributes Brand: FSBREC Product Code: BRCS080N10SDP Package Type: TO-252 Channel

Product Overview The MSQ30P15 is a high-performance trench P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key applications include MB, VGA, Vcore, POL applications, load switches, and LED applications. Product Attributes Brand: Bruckewell

Product Overview The SI2301-P is a P-Channel MOSFET utilizing advanced trench process technology and high-density cell design for ultra-low on-resistance. This RoHS-compliant SOT-23 package component is designed for efficient power management applications. Product Attributes Brand: BORN Technology: Advanced Trench Process Cell Design: High Density Cell Design Type: P-Channel MOSFET Package: SOT-23 Compliance: ROHS Technical Specifications Parameter Symbol Condition Min. Typ.

Product Overview The MSQ60P04D is a high-performance P-Channel 60-V (D-S) MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge. It is well-suited for high-efficiency, fast-switching applications and meets RoHS and Green Product requirements. Typical applications include MB, VGA, Vcore, POL applications, and SMPS 2nd SR. Product Attributes Brand: Bruckewell Technology Corporation Product Type: P-Channel MOSFET Voltage Rating: 60 V (Drain

Product Overview The BRCS18N20RA is an N-Channel MOSFET housed in a TO-220 plastic package. It is engineered for fast-switching applications, offering low gate charge and low RDS(on). This MOSFET is ideally suited for low-voltage applications, including automotive circuits, DC/DC converters, and high-efficiency power conversion for portable and battery-operated products. Product Attributes Brand: Fsb (implied by http://www.fsbrec.com) Package Type: TO-220 Plastic Package

Product Overview The Bruckewell CMS120N080B is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, contributing to low capacitance and high system efficiency. This MOSFET is suitable for easy paralleling and is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters.

Product Overview The BRCS4606SC is a complementary enhancement mode MOSFET offered in a SOP-8 plastic package. It is designed for high-efficiency switching DC/DC converters and power switch applications. This device is well-suited for use as a load switch or in PWM applications. The product is halogen-free. Product Attributes Brand: FS (implied by URL http://www.fsbrec.com) Package Type: SOP-8 Certifications: Halogen-free Technical Specifications Parameter Symbol N-channel

Product Overview The MSD100N110SC is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval.

Product Overview The BR2N7002K2Q is an N-channel MOSFET in a SOT-23 plastic package. It features sensitive gate trigger current and low holding current, with ESD protection up to 2KV. This device is qualified to AEC-Q101 Standards for High Reliability and is a halogen-free product. It is intended for general-purpose switching and phase control applications, meeting the stringent requirements of automotive applications. Product Attributes Brand: FS (fsbrec.com) Package Type:

Product Overview The MSH40N70D is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability

Product Overview The BRCS4953DMF is a dual P-Channel MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. It features a super high-density cell design, offering low on-state resistance (RDS(ON)) and robust reliability. Encased in a SOT23-6 plastic package, this device provides efficient performance for demanding power control needs. Product Attributes Brand: FSB Package Type: SOT23-6 Channel Type: Dual P

Product Overview The MSH100N045SA is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideally suited for high efficiency, fast switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability

Product Overview The BRCS060N15SHRA is an N-channel MOSFET in a TO-220 plastic package, designed for high-performance applications. It features a Drain-Source Voltage (VDS) of 150V and a continuous Drain Current (ID) of 123A at 25C. With a low static drain-source on-resistance (RDS(on)) of 6.2m (typ. 5.8m) at 10V, this RoHS-compliant, halogen-free product is ideal for Telecom, Industrial Power Supply, and Load Switch applications. Its robust design ensures reliable operation

Product Overview The IRLML6401 is a P-Channel MOSFET designed for fast switching applications. It features a High Density Cell Design for ultra-low on-resistance and is available in a SOT-23-3L package for surface mount applications. Key electrical characteristics include a drain-source voltage of -12V and a continuous drain current of -4.3A at 25 with VGS=4.5V. The device offers a maximum on-resistance of 50m at VGS = -4.5V and 85m at VGS = -2.5V. Product Attributes Brand:

Product Overview The BM3134KE is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for surface mount applications using the SOT-723 package. This lead-free product is suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shift applications. Product Attributes Brand: Born-TW (implied by www.born-tw.com) Package