Single FETs, MOSFETs

quality Enhanced Silicon MOSFET Minos MLS65R380D with 650V VDS and 100 Percent Avalanche Testing Reliability factory

Enhanced Silicon MOSFET Minos MLS65R380D with 650V VDS and 100 Percent Avalanche Testing Reliability

Product DescriptionThe MLS65R380D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This technology significantly reduces conduction losses and improves switching performance, making the transistor an ideal choice for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key characteristics include a VDS of 650V, an ID of 11A, and an RDS(ON) of less than 0.33 at VGS=10V. It offers fast switching, 100%

quality Minos MPF5N65 650V N Channel MOSFET designed for power conversion in switch mode power supplies and UPS factory

Minos MPF5N65 650V N Channel MOSFET designed for power conversion in switch mode power supplies and UPS

Product OverviewThis 650V N-Channel MOSFET is designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested performance, and improved dv/dt capability, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems. The device is available in TO-220F, TO-220, TO-251, and TO-252 packages.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaTechnical

quality Low Crss N Channel MOSFET MIRACLE POWER MPF12N80 800V 12A Fast Switching and Avalanche Tested Device factory

Low Crss N Channel MOSFET MIRACLE POWER MPF12N80 800V 12A Fast Switching and Avalanche Tested Device

Product Overview The MPF12N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This device features high voltage capability (800V), a continuous drain current of 12A, and a low on-resistance of 0.68 (typ.) at VGS = 10V. It is designed with low Crss and fast switching characteristics, and is 100% avalanche tested. Applications include chargers and LED power supplies. Product Attributes Brand: Miracle Technology Co., Ltd. Product Line: MPF Series Technology: N

quality Power management transistor MATSUKI ME15N10 G N channel logic enhancement mode field effect transistor factory

Power management transistor MATSUKI ME15N10 G N channel logic enhancement mode field effect transistor

Product OverviewThe ME15N10 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phone power management, notebook computer power management, and other battery-powered circuits. It offers low in-line power loss within a very small outline surface mount package.Product AttributesBrand: Not

quality MATSUKI MEE7816S G N Channel MOSFET Featuring Force MOS ETG Technology for Medium Voltage Power Circuits factory

MATSUKI MEE7816S G N Channel MOSFET Featuring Force MOS ETG Technology for Medium Voltage Power Circuits

Product OverviewThe MEE7816S is an N-Channel enhancement mode power field-effect transistor featuring Force-MOS patented Extended Trench Gate (ETG) technology. This advanced design minimizes on-state resistance and gate charge while enhancing avalanche capability. It is ideal for medium voltage applications such as chargers, adapters, notebook computer power management, and lighting dimming circuits, offering low in-line power loss in a compact surface mount package.Product

quality Industrial grade MCC MCAC80N06Y TP MOSFET featuring Split Gate Trench Technology and RoHS compliance factory

Industrial grade MCC MCAC80N06Y TP MOSFET featuring Split Gate Trench Technology and RoHS compliance

Product Overview The MCAC80N06Y is a high-performance N-channel MOSFET featuring Split Gate Trench MOSFET Technology. It offers very low on-resistance (RDS(ON)) and is designed for applications requiring efficient power switching. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, making it a "Green" device. It is also Lead Free and RoHS Compliant. The operating junction temperature range is -55C to +150C, with a storage

quality MDD Microdiode Semiconductor BSS123 N Channel Enhancement Mode MOSFET 100V low input output leakage factory

MDD Microdiode Semiconductor BSS123 N Channel Enhancement Mode MOSFET 100V low input output leakage

Product OverviewThe BSS123 is a 100V N-Channel Enhancement Mode MOSFET featuring Trench Power MV MOSFET technology. It acts as a voltage-controlled small signal switch with low input capacitance and fast switching speed. The device offers low input/output leakage, making it suitable for applications like small servo motor control, power MOSFET gate drivers, and general switching applications.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedCol

quality MCC MCAC50N06Y TP N Channel MOSFET in DFN5060 Package with Halogen Free Option and Low Gate Charge factory

MCC MCAC50N06Y TP N Channel MOSFET in DFN5060 Package with Halogen Free Option and Low Gate Charge

Product Overview The MCAC50N06Y is an N-Channel MOSFET designed for various applications. It features low gate charge, a DFN5060 package, and meets UL 94 V-0 flammability rating. This MOSFET is Moisture Sensitivity Level 1 compliant and available in a Halogen Free option upon request. It is also Lead Free Finish/RoHS Compliant. Product Attributes Brand: MCC (Micro Commercial Components Corp.) Package Type: DFN5060 Flammability Rating: UL 94 V-0 Moisture Sensitivity Level: 1

quality MCC SICPT2060DY BP 20 Amp Silicon Carbide Schottky Diode 650 Volt VRRM for Motor Drives and Traction factory

MCC SICPT2060DY BP 20 Amp Silicon Carbide Schottky Diode 650 Volt VRRM for Motor Drives and Traction

Product Overview The SICPT2060DY is a 20 Amp Silicon Carbide Schottky Barrier Rectifier with a 650 Volt VRRM rating. It offers temperature-independent performance, low switching loss, and low heat dissipation requirements, making it suitable for high-frequency operation. Key applications include switching power supplies, power factor correction, motor drives, traction, and charging piles. This device features zero reverse recovery current and a positive temperature coefficien

quality power MOSFET MASPOWER MS100N20IDT0 with 200V drain source voltage and 100A continuous drain current factory

power MOSFET MASPOWER MS100N20IDT0 with 200V drain source voltage and 100A continuous drain current

Product OverviewThe MS100N20IDC0/T0 H1.02 Maspower is a high-performance N-channel MOSFET designed for power management applications in inverter systems. It features a VDS of 200V, ID of 100A, and an ultra-low RDS(on) of 23m at VGS=10V due to its high-density cell design. This product offers low gate charge and improved dv/dt capability, making it suitable for demanding power applications. It is a RoHS compliant product.Product AttributesBrand: MaspowerProduct Code:

quality Trench Power LV MOSFET MCC SI2101A TP P Channel Device with Lead Free Finish and Halogen Free Design factory

Trench Power LV MOSFET MCC SI2101A TP P Channel Device with Lead Free Finish and Halogen Free Design

Product Overview The SI2101A is a P-CHANNEL MOSFET featuring Trench Power LV MOSFET Technology. It offers low RDS(ON) and low gate charge, making it suitable for various applications. This device is Moisture Sensitivity Level 1, Halogen Free (Green Device), meets UL 94 V-0 flammability rating, and is Lead Free Finish/RoHS Compliant. The "P" suffix designates RoHS compliance. Product Attributes Brand: MCCSEMI Technology: Trench Power LV MOSFET Moisture Sensitivity Level: 1

quality High voltage N channel MOSFET MASPOWER MS10N100HCT1 with 1000V drain source voltage and 10A current factory

High voltage N channel MOSFET MASPOWER MS10N100HCT1 with 1000V drain source voltage and 10A current

Product OverviewThe MS10N100HCT1(T0) is a high-performance N-channel MOSFET designed for switching applications. It features a VDS of 1000V and an ID of 10A, with low Crss, low gate charge, and improved dv/dt capability, making it suitable for demanding power electronics designs.Product AttributesBrand: MaspowerModel: MS10N100HCT1(T0)Technical SpecificationsParameterSymbolTests conditionsMinTypeMaxUnitTO-220FTO-220Absolute RatingsDrain-Source VoltageVDSS1000VTransient Gate

quality 1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120B for Switching in PV Inverters and Motor Drives factory

1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120B for Switching in PV Inverters and Motor Drives

Product OverviewThe Microchip MSC080SMA120B is a 1200 V, 80 m SiC N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. Leveraging silicon carbide technology, it offers advantages over traditional silicon MOSFETs and IGBTs, including high efficiency, faster switching speeds, and improved thermal capabilities. This device is suitable for demanding applications such as PV inverters, industrial motor drives,

quality N Channel MOSFET MCC MCAC40N10YA TP with 100V Drain Source Voltage and 40A Continuous Drain Current factory

N Channel MOSFET MCC MCAC40N10YA TP with 100V Drain Source Voltage and 40A Continuous Drain Current

Product Overview The MCAC40N10YA is an N-Channel MOSFET featuring an Advanced Trench Cell Design for high-speed switching. It is designed to meet UL 94 V-0 flammability rating and offers Moisture Sensitivity Level 1. This MOSFET is available as Halogen Free upon request by adding the "-HF" suffix and is Lead Free/RoHS Compliant, indicated by the "P" suffix. It is suitable for applications requiring efficient and reliable power switching. Product Attributes Brand: MCC (Micro

quality ME110N10F N Channel trench MOSFET with high DC current capability and low on state resistance design factory

ME110N10F N Channel trench MOSFET with high DC current capability and low on state resistance design

Product OverviewThe ME110N10T/ME110N10F are N-Channel enhancement mode power logic trench MOSFETs utilizing high cell density DMOS technology. This advanced process is optimized to minimize on-state resistance, offering exceptionally low RDS(ON) and high DC current capability. They are designed for applications requiring efficient power switching.Product AttributesBrand: Matsuki (implied by datasheet revision notes)Origin: Not specifiedMaterial: Not specifiedColor: Not

quality Trench MV MOSFET MCC 2N7002KT TP N Channel Device with Moisture Sensitivity Level 1 and Halogen Free factory

Trench MV MOSFET MCC 2N7002KT TP N Channel Device with Moisture Sensitivity Level 1 and Halogen Free

Product Overview This N-Channel MOSFET, designated as the K7 series and compliant with RoHS standards, features Trench MV MOSFET Technology for efficient power management. It offers ESD protection up to 2.5KV (HBM) and is designed with moisture sensitivity level 1. The device is Halogen Free, a "Green" device, and its epoxy meets UL 94 V-0 flammability rating, with a Lead Free finish. It is suitable for applications requiring reliable switching and power control. Product

quality MDD Microdiode Semiconductor MDD4N65F 650V N Channel MOSFET Designed for Power Supply Applications factory

MDD Microdiode Semiconductor MDD4N65F 650V N Channel MOSFET Designed for Power Supply Applications

Product OverviewThe MDD4N65F/MDD4N65P/MDD4N65D is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. Key features include ultra-low gate charge, low reverse transfer capacitance, and fast switching capability, making it suitable for power supplies and electronic ballasts. It offers improved dv/dt capability and high ruggedness.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications:

quality Power MOSFET MIRACLE POWER MJQ54N65FA Suitable for Full Bridge and Phase Shift Bridge Power Conversion factory

Power MOSFET MIRACLE POWER MJQ54N65FA Suitable for Full Bridge and Phase Shift Bridge Power Conversion

Product Overview The MJQ54N65FA is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. This device is 100% avalanche tested and is designed for high-efficiency applications such as soft switching boost PFC, telecom power, EV charging, solar inverters, and server power supplies. It is also suitable for phase-shift-bridge (ZVS), LLC, half bridge, asymmetric half bridge, series resonance half

quality N CHANNEL Super Junction MOSFET MCC MSJAC11N65Y TP with Low Figure of Merit and Halogen Free Option factory

N CHANNEL Super Junction MOSFET MCC MSJAC11N65Y TP with Low Figure of Merit and Halogen Free Option

Product Overview The MSJAC11N65Y is an N-CHANNEL Super-Junction Power MOSFET designed for high-efficiency power applications. It features a very low FOM (RDS(on) Qg) and meets UL 94 V-0 flammability rating. This MOSFET is Moisture Sensitivity Level 1 and is Halogen Free available upon request. It is also Lead Free Finish/RoHS Compliant. Product Attributes Brand: MCC (Micro Commercial Components) Model: MSJAC11N65Y Type: N-CHANNEL Super-Junction Power MOSFET Flammability

quality MCC 2SK3019A TP N Channel MOSFET Designed for Fast Switching and Environmental Compliance in Circuits factory

MCC 2SK3019A TP N Channel MOSFET Designed for Fast Switching and Environmental Compliance in Circuits

Product Overview The 2SK3019A is an N-Channel MOSFET from MCC Semi, designed for applications requiring low ON-resistance and fast switching speeds. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, making it a "Green" device. It is also Lead Free Finish/RoHS Compliant, indicated by the "P" suffix. The device is suitable for various electronic circuits where efficient switching and low power loss are critical. Product