Single FETs, MOSFETs
MCC 2SK3019A TP N Channel MOSFET Designed for Fast Switching and Environmental Compliance in Circuits
Product Overview The 2SK3019A is an N-Channel MOSFET from MCC Semi, designed for applications requiring low ON-resistance and fast switching speeds. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, making it a "Green" device. It is also Lead Free ...
NChannel MOSFET LRC LNA2306LT1G 30V 5.8A Continuous Drain Current RoHS Compliant Halogen Free Device
Product Overview The LNA2306LT1G and S-LNA2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These MOSFETs are suitable for automotive and other applications requiring unique site and ...
Soft body diode featured in MDD Microdiode Semiconductor MDDG10R20D N Channel Enhancement Mode MOSFET
Product OverviewThe MDDG10R20D is a 100V N-Channel Enhancement Mode MOSFET utilizing MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. Optimized for minimal on-state resistance and superior switching performance, it features an extremely low reverse recovery charge and ...
High Current Switching Power MOSFET Minos MPT028N10 Featuring Double Trench Technology for Efficiency
Product DescriptionThe MPT028N10 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) ...
High saturation current N Channel MOSFET MDD Microdiode Semiconductor MDD2002KDW with ESD protection
Product OverviewThe MDD2002KDW is an N-Channel Enhancement Mode MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(ON), making it suitable for voltage-controlled small signal switching applications. This rugged and reliable MOSFET offers high saturation current ...
Low on resistance P channel transistor MATSUKI ME60P06T ideal for DC DC converters and load switches
Product OverviewThe ME60P06T is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power ...
Low On Resistance Dual N Channel MOSFET MATSUKI ME4970 Suitable for Cellular Phone and Notebook Power
Product Overview The ME4970 is a Dual N-Channel logic enhancement mode power MOSFET featuring high cell density, DMOS trench technology for minimized on-state resistance. It is ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery...
Advanced trench process technology in LRC LP2305ALT1G 20V P Channel Enhancement Mode MOSFET for power control
Product Overview The LP2305ALT1G is a 20V P-Channel Enhancement-Mode MOSFET manufactured by Leshan Radio Company, LTD. It features an advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is fully characterized for avalanche voltage and current, ...
Low voltage power transistor MATSUKI ME2320D featuring low inline power loss and high side switching
Product OverviewThe ME2320D is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones ...
N Channel Power MOSFET Minos MDT60N10D with Low Gate Charge and High Thermal Dissipation Capability
Product OverviewThe MDT60N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power ...
MDD Microdiode Semiconductor MDDG10R04P 100V N Channel MOSFET Featuring Low RDSon and RoHS Compliance
Product OverviewThe MDDG10R04P is a 100V N-Channel Enhancement Mode MOSFET featuring an extremely low Max RDS(on) of 4.4 m at VGS = 10V, ID = 100A. Produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology, it offers optimized on-state resistance and superior ...
High Voltage MOS Power Transistor MASPOWER MS5N100 with Excellent Avalanche Energy Handling Capacity
Product OverviewThe MS5N100/S/FT/FE/FD is a Planar Process N-channel 1000V MOS power transistor. It features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This device is suitable for ...
Power Management MOSFET MATSUKI ME12N04 N Channel Logic Enhancement Mode with Low On State Resistance
Product OverviewThe ME12N04 is an N-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as ...
Trench MV MOSFET Technology in MCC 2N7002KHE3 TP N Channel MOSFET with UL 94 V 0 Flammability Rating
Product Overview The 2N7002KHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification and ESD protection up to 2KV (HBM). It utilizes Trench MV MOSFET Technology and is designed for high reliability with Moisture Sensitivity Level 1 and Halogen Free ("Green" Device) compliance. The epoxy meets UL ...
High Current Dual Channel N Channel MOSFET MCC SI3134KE TP with Fast Switching and Low On Resistance
Product Overview The 0M6S0M1C0M is a dual channel N-channel MOSFET designed for high-performance applications. It features low on-resistance, fast switching speed, and meets UL 94V-0 flammability rating. This device is moisture sensitivity level 1, Halogen Free, and Lead-Free compliant, adhering to ...
MCC MCT04N10 TP N Channel MOSFET with Fast Switching and Lead Free Finish in Compact SOT 223 Package
Product Overview The MCT04N10 is an N-Channel MOSFET designed for efficient power switching applications. It features ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. This MOSFET is housed in a SOT-223 package and meets UL 94 V-0 flammability rating. It is ...
Low On Resistance MOSFET MASPOWER MS120N15FE 150V 120A TO263 Package Suitable for Switching Circuits
Product OverviewThe MS120N15FT/E/B is a high-performance N-channel MOSFET from Maspower, designed for switching applications. It features a high drain-source voltage of 150V and a continuous drain current of 120A at a gate-source voltage of 10V. Its key advantage is a very low on-resistance (RDS(ON) ...
Fast Switching N Channel Power MOSFET MIRACLE POWER MPD05N50 with Low Crss and 1.5 Max On Resistance
Product Overview The MPD05N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 5A, and a low on-resistance of 1.5 (Max.) at VGS = 10V. This MOSFET offers low Crss, fast ...
MEM2402K3G N Channel Trench MOSFET with Ultra Low On Resistance and 60V Drain Source Voltage Rating
Product OverviewThe MEM2402 is an N-CHANNEL Trench Power MOSFET designed with advanced trench MOSFET technology for extremely low RDS(ON). Its low resistance package makes it suitable for PWM, load switching, and general-purpose applications. Key features include VDS of 60V, ID of 15A, and ultra-low ...
20V P Channel Enhancement Mode MOSFET LRC LP2301LT1G with low on resistance and simple drive requirements
Product Overview This 20V P-Channel Enhancement-Mode MOSFET, manufactured using an advanced trench process technology and high-density cell design, offers ultra-low on-resistance. It features fully characterized avalanche voltage and current, improved shoot-through FOM, and simple drive requirements...
