Single FETs, MOSFETs

Product OverviewThe MDDG10R20D is a 100V N-Channel Enhancement Mode MOSFET utilizing MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. Optimized for minimal on-state resistance and superior switching performance, it features an extremely low reverse recovery charge and a best-in-class soft body diode. This RoHS compliant MOSFET is ideal for power management in Telecom, Industrial Automation, Motor Drives, and Uninterruptible Power Supplies, as

Product Overview The LNA2306LT1G and S-LNA2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These MOSFETs are suitable for automotive and other applications requiring unique site and control change requirements, with the S-prefix variant being AEC-Q101 qualified and PPAP capable. They are RoHS compliant and Halogen Free. Product Attributes Brand: Leshan Radio Company

Product DescriptionThe MPT028N10 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNS-KX (Shenzhen Minos)Certifications: RoHSTechnical SpecificationsOrdering CodePackageProduct CodeVDS (V)RDS(on)

Product OverviewThe MDD2002KDW is an N-Channel Enhancement Mode MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(ON), making it suitable for voltage-controlled small signal switching applications. This rugged and reliable MOSFET offers high saturation current capability and ESD protection (2kV). It is ideal for load switches in portable devices and DC/DC converters.Product AttributesBrand: MicrodiodePackage Type: SOT-363Material: Plastic

Product OverviewThe ME60P06T is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.Product AttributesBrand: Matsuki Electric/Force MosProduct Variants: ME60P06T (Pb

Product Overview The ME4970 is a Dual N-Channel logic enhancement mode power MOSFET featuring high cell density, DMOS trench technology for minimized on-state resistance. It is ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits requiring high-side switching and low power loss in a small outline surface mount package. Key features include extremely low RDS(ON) and exceptional DC current

Product OverviewThe ME2320D is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features an ESD

Product Overview The LP2305ALT1G is a 20V P-Channel Enhancement-Mode MOSFET manufactured by Leshan Radio Company, LTD. It features an advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is fully characterized for avalanche voltage and current, offering improved Shoot-Through FOM. The material complies with RoHS requirements and is Halogen Free. It is suitable for applications requiring efficient power switching and low on

Product OverviewThe MDT60N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower Rdson, and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with

Product OverviewThe MDDG10R04P is a 100V N-Channel Enhancement Mode MOSFET featuring an extremely low Max RDS(on) of 4.4 m at VGS = 10V, ID = 100A. Produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology, it offers optimized on-state resistance and superior switching performance with a best-in-class soft body diode. This MOSFET is 100% UIS Tested and RoHS Compliant, making it suitable for applications such as synchronous rectification

Product OverviewThe MS5N100/S/FT/FE/FD is a Planar Process N-channel 1000V MOS power transistor. It features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This device is suitable for switching applications.Product AttributesBrand: MaspowerOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbol

Product OverviewThe ME12N04 is an N-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.Product AttributesBrand: Matsuki Electric/Force MosProduct

Product Overview The 2N7002KHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification and ESD protection up to 2KV (HBM). It utilizes Trench MV MOSFET Technology and is designed for high reliability with Moisture Sensitivity Level 1 and Halogen Free ("Green" Device) compliance. The epoxy meets UL 94 V-0 flammability rating, and the device is Lead Free Finish/RoHS Compliant. This MOSFET is suitable for applications requiring robust performance within an operating junction

Product Overview The 0M6S0M1C0M is a dual channel N-channel MOSFET designed for high-performance applications. It features low on-resistance, fast switching speed, and meets UL 94V-0 flammability rating. This device is moisture sensitivity level 1, Halogen Free, and Lead-Free compliant, adhering to RoHS standards. It is suitable for operation within a temperature range of -55C to +150C. Product Attributes Brand: MCC (Micro Commercial Components Corp.) Compliance: RoHS

Product Overview The MCT04N10 is an N-Channel MOSFET designed for efficient power switching applications. It features ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. This MOSFET is housed in a SOT-223 package and meets UL 94 V-0 flammability rating. It is Moisture Sensitivity Level 1 and available in a Halogen Free option by adding the "-HF" suffix. The device is Lead Free Finish/RoHS Compliant, with the "P" suffix designating RoHS

Product OverviewThe MS120N15FT/E/B is a high-performance N-channel MOSFET from Maspower, designed for switching applications. It features a high drain-source voltage of 150V and a continuous drain current of 120A at a gate-source voltage of 10V. Its key advantage is a very low on-resistance (RDS(ON) < 7.2m @VGS=10V), ensuring efficient power delivery and reduced heat generation.Product AttributesBrand: MaspowerPart Number: MS120N15FT/E/BProduct Code: H1.02RoHS: FreeTechnical

Product Overview The MPD05N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 5A, and a low on-resistance of 1.5 (Max.) at VGS = 10V. This MOSFET offers low Crss, fast switching speeds, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications. Product Attributes

Product OverviewThe MEM2402 is an N-CHANNEL Trench Power MOSFET designed with advanced trench MOSFET technology for extremely low RDS(ON). Its low resistance package makes it suitable for PWM, load switching, and general-purpose applications. Key features include VDS of 60V, ID of 15A, and ultra-low on-resistance.Product AttributesBrand: MicroneOrigin: China (www.microne.com.cn)Package Type: TO-252Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitMaximum

Product Overview This 20V P-Channel Enhancement-Mode MOSFET, manufactured using an advanced trench process technology and high-density cell design, offers ultra-low on-resistance. It features fully characterized avalanche voltage and current, improved shoot-through FOM, and simple drive requirements. The device is compliant with RoHS requirements and is Halogen Free. Its small package outline and surface mount capability make it suitable for various electronic applications.

Product Overview The MCU05N60A is a Planar Power MOSFET utilizing advanced technology to achieve lower capacitance and moisture sensitivity. This Halogen-Free, "Green" device meets UL 94 V-0 flammability rating and features a Lead-Free Finish RoHS Compliant design. It is suitable for applications requiring high reliability and compliance with environmental standards. Product Attributes Brand: MCC Technology: Planar Power MOSFET Environmental Compliance: Halogen Free. "Green"