Single FETs, MOSFETs

Product Overview The SI2302A is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The product is lead-free, RoHS compliant, and meets UL 94 V-0 flammability rating. It is also available in a halogen-free option upon request. The SI2302A is rugged and reliable, with a wide operating and

Product OverviewThe APT100F50J is a high-speed, high-voltage N-channel switch-mode power MOSFET featuring a proprietary planar stripe design for excellent reliability and manufacturability. It offers low switching loss due to low input capacitance and ultra-low Crss (Miller capacitance). The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates, resulting in low EMI and reliable paralleling, even at high frequencies. Its high

Product OverviewThe MMUB65R090R is a high-efficiency N-channel MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, enabling significant power loss reduction through high-speed switching. Optimized charge coupling technology enhances efficiency, while user-friendly design provides advantages like low EMI, low switching loss, and excellent ESD capability. This MOSFET is ideal for demanding

Product OverviewThe MDT18N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rds(on), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product OverviewThe ME2333 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBra

Product OverviewThe ME66N04T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is designed for power management, DC/DC converters, and load switch applications.Product AttributesBrand: Matsuki (implied by datasheet)Type: N-Channel 4V (D-S) MOSFETTechnology: High cell density DMOS

Product Overview The MCQ12N06 is an N-Channel Power MOSFET featuring Split Gate Trench Power MV MOSFET Technology. It offers low gate charge and is designed to meet UL 94 V-0 flammability rating. This device is Moisture Sensitivity Level 1 and Halogen Free, designated as a "Green" device. It is lead-free and RoHS compliant. The MCQ12N06 is suitable for applications requiring efficient power switching and control. Product Attributes Brand: MCCSEMI Technology: Split Gate Trench

Product OverviewThe ME08N20 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converter circuits requiring low in-line power loss. It offers an RDS(ON) of 0.4 Ohm at VGS=10V and exceptional DC current capability.Product AttributesProduct Name:

Product Overview The 2N7002K is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. It is rugged, reliable, and ESD protected up to 2KV (HBM). This component is available in a SOT-23 package and is suitable for applications requiring a compact and robust MOSFET. Halogen-free options are available upon request by adding the "-HF" suffix. The epoxy material meets UL 94 V-0 flammability rating, and it is

Product Overview The SI5618 is a P-Channel MOSFET featuring an Advanced Trench Cell Design. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring reliable P-Channel MOSFET performance with a focus on safety and environmental compliance. Product Attributes Brand: MCC (Micro Commercial Components Corp.) Model: SI5618 Flammability Rating: UL 94 V-0 Moisture Sensitivity

Product OverviewThe Microsemi MSC035SMA070B4 is a 700 V, 35 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon solutions. It features low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a reliable body diode, and superior avalanche ruggedness. This device offers high efficiency, enabling lighter and

Product Overview The SI3415B is a P-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering ultra-low RDS(on) and high-speed switching capabilities. It features ESD protection up to 2.5KV (HBM) and utilizes Trench Power LV MOSFET Technology. The epoxy used meets UL 94 V-0 flammability rating, and the device is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request by adding the "-HF" suffix, and

Product Overview The MCMN2012 is an N-Channel Power MOSFET designed for various electronic applications. It features a TrenchFET construction, meeting UL 94 V-0 flammability rating, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring efficient power switching and management. Product Attributes Brand: MCC Product Line: MCMN2012 Construction: TrenchFET Power MOSFET Flammability Rating: UL 94 V-0 Moisture Sensitivity Level: 1 Environmental

Product OverviewThe ME2308S is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include very

Product OverviewThe MDF7N60B is an N-channel MOSFET produced using advanced Magnachip's MOSFET Technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features include a VDS of 600V, VDS of 660V at Tjmax, and an ID of 7.0A at VGS = 10V, with an RDS(ON) of 1.15 at VGS = 10V.Product AttributesBrand: Magnachip Semiconductor Ltd.Origin: Not specifiedM

Product OverviewThe ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface-mount package. Its key features include

Product OverviewThe MDU1721VRH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MOSFET technology to deliver high performance in on-state resistance, fast switching, and excellent quality. It is ideally suited for synchronous rectification in server and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Name: MDU1721VRHTechnology: Trench MOSFETPackage: PDFN56Certifications: Halogen FreeRoHS Status

Product OverviewThe MS15N90ICT1 is a high-efficiency power MOSFET from Maspower, designed for demanding applications. It features a VDS of 900V and ID of 15A, with low Crss, low gate charge, and improved dv/dt capability. This makes it ideal for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and UPS systems.Product AttributesBrand: MaspowerModel: MS15N90ICT1Version: H1.01Technical SpecificationsParameterSymbolTest ConditionsMinTypMa

Product OverviewThe IRF830 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching, adapters, and chargers, offering low ON resistance and low reverse transfer capacitances. The device is 100% tested for single pulse avalanche energy.Product AttributesBrand: mns-kx.comPackage: TO-220Origin: Shenzhen Minos (implied by contact information)Technical

Product OverviewThe ME35N10 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device exceptionally suitable for low-voltage applications. It offers superior on-resistance and maximum DC current capability.Product AttributesBrand: Matsuki Electric/ Force mosCertifications: Pb-free (ME35N10), Green product-Halogen free (ME35N10-G)Technical