Single FETs, MOSFETs
Enhancement mode transistor MICROCHIP TC2320TG-G with low threshold voltage and high input impedance
Product OverviewThe TC2320 is a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and a proven silicon gate manufacturing process, offering the power handling of bipolar ...
MCC SI2302A TP N Channel enhancement mode transistor featuring low RDS ON and wide temperature range
Product Overview The SI2302A is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The product is lead-free, ...
700V MOSFET MagnaChip Semicon MMUB65R090RURH designed for power loss reduction and energy management
Product OverviewThe MMUB65R090R is a high-efficiency N-channel MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, enabling significant power loss reduction through high-speed switching. Optimized charge coupling ...
Durable power MOSFET MICROCHIP APT24F50B optimized for low EMI and high frequency power applications
Product OverviewThe APT100F50J is a high-speed, high-voltage N-channel switch-mode power MOSFET featuring a proprietary planar stripe design for excellent reliability and manufacturability. It offers low switching loss due to low input capacitance and ultra-low Crss (Miller capacitance). The ...
Low RDS ON Power MOSFET Minos MDT18N10D for in Uninterruptible Power Supplies and Switching Circuits
Product OverviewThe MDT18N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power ...
MATSUKI ME2333 G P Channel Power Transistor Designed for Low Voltage High Side Switching Applications
Product OverviewThe ME2333 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones ...
High cell density DMOS trench technology transistor MATSUKI ME66N04T for power management solutions
Product OverviewThe ME66N04T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is designed for power ...
Power MOSFET MCC MCQ12N06 TP Featuring Split Gate Trench Technology and UL 94 V0 Flammability Rating
Product Overview The MCQ12N06 is an N-Channel Power MOSFET featuring Split Gate Trench Power MV MOSFET Technology. It offers low gate charge and is designed to meet UL 94 V-0 flammability rating. This device is Moisture Sensitivity Level 1 and Halogen Free, designated as a "Green" device. It is lead...
High Cell Density DMOS Trench N Channel MOSFET MATSUKI ME08N20 G for DC to DC Conversion Applications
Product OverviewThe ME08N20 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and ...
MCC 2N7002K TP N Channel MOSFET with Low RDS ON and 2KV ESD Protection Featuring Halogen Free Option
Product Overview The 2N7002K is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. It is rugged, reliable, and ESD protected up to 2KV (HBM). This component is available in a SOT-23 package and is suitable for applications ...
MCC SI5618 TP P Channel MOSFET Featuring UL 94 V0 Flammability Rating and Green Device Certification
Product Overview The SI5618 is a P-Channel MOSFET featuring an Advanced Trench Cell Design. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring reliable P-Channel MOSFET performance with a ...
700 Volt Silicon Carbide MOSFET MICROCHIP MSC035SMA070B4 with Low Capacitance and High Current Rating
Product OverviewThe Microsemi MSC035SMA070B4 is a 700 V, 35 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon solutions. It features low capacitances, fast switching ...
High Speed Switching MOSFET MCC SI3415B TP with ESD Protection up to 2.5KV and UL 94 V 0 Rated Epoxy
Product Overview The SI3415B is a P-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering ultra-low RDS(on) and high-speed switching capabilities. It features ESD protection up to 2.5KV (HBM) and utilizes Trench Power LV MOSFET Technology. The epoxy ...
Power MOSFET MCC MCMN2012-TP featuring TrenchFET construction and halogen free RoHS compliant design
Product Overview The MCMN2012 is an N-Channel Power MOSFET designed for various electronic applications. It features a TrenchFET construction, meeting UL 94 V-0 flammability rating, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring efficient power switching ...
N channel power MOSFET MATSUKI ME2308S G designed for battery powered applications and surface mount
Product OverviewThe ME2308S is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
switching MOSFET MagnaChip Semicon MDF7N60BTH with 600 volt drain source voltage and low on resistance
Product OverviewThe MDF7N60B is an N-channel MOSFET produced using advanced Magnachip's MOSFET Technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features include a ...
Low Voltage Power MOSFET MATSUKI ME7114S N Channel with Enhanced Logic Mode and Minimal On Resistance
Product OverviewThe ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Power MOSFET MASPOWER MS15N90ICT1 900V 15A Suitable for Switch Mode Power Supplies and UPS Systems
Product OverviewThe MS15N90ICT1 is a high-efficiency power MOSFET from Maspower, designed for demanding applications. It features a VDS of 900V and ID of 15A, with low Crss, low gate charge, and improved dv/dt capability. This makes it ideal for high efficiency switch mode power supplies, electronic ...
Trench MOSFET MagnaChip Semicon MDU1721VRH Single N Channel Device with RoHS and Halogen Free Status
Product OverviewThe MDU1721VRH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MOSFET technology to deliver high performance in on-state resistance, fast switching, and excellent quality. It is ideally suited for synchronous rectification in server and ...
Power MOSFET Minos IRF830 Silicon N Channel Device with Low On Resistance and High Voltage Capability
Product OverviewThe IRF830 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching, adapters, and chargers, offering low ON resistance and low reverse transfer capacitances. ...
