Single FETs, MOSFETs

Product Overview The SI3420A is an N-channel MOSFET designed for high power and current handling capabilities. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This MOSFET is available in a lead-free finish and is RoHS compliant, with a halogen-free option available upon request by adding the "-HF" suffix. It is suitable for applications requiring robust power and current performance. Product Attributes

Supertex DN2540 N-Channel Depletion-Mode Vertical DMOS FET The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor designed with an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it free from secondary breakdown and thermally-induced runaway. This device is suitable for various switching and amplifying applications, including normally-on switches, solid-state

Product Overview The LP2317DT2AG is a 20V P-Channel MOSFET designed for various power management applications. It features low RDS(ON) due to trench technology, offering efficient performance with low thermal impedance and fast switching speeds. This device is RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications with unique site and control change requirements. Key application

Product OverviewThe ME4835 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones, notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.Product AttributesBrand: ME (implied from product name ME4835)Technology:

Product OverviewThe SI2302S is a high-performance N-Channel Enhancement Mode MOSFET in a SOT-23 package. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient switching and low power loss.Product AttributesBrand: MicrodiodePackage Type: SOT-23Technology: Advanced trench processCell Design: High DensityMode: N-Channel Enhancement ModeTechnical Specification

Product OverviewThe ME96N03-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBrand: Not

Product OverviewThe MS25N65HCT1 is a high-performance power semiconductor from Maspower, designed for demanding power applications. It features ultra-low RDS(on) and gate charge, along with 100% UIS tested reliability. This device is ideal for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).Product AttributesBrand: MaspowerModel: MS25N65HCT1Compliance: RoHS compliantTechnical SpecificationsParameterSymbolTest

Product Overview The MS4N1350/S/T/E/W is a high-performance MOSFET designed for switching applications. It features a high breakdown voltage (VDS=1500V), a continuous drain current of 4A, and low on-resistance (RDS(on)

Product OverviewThe MS330N15JDF4(C0) is a high-performance power MOSFET from Maspower, designed for efficient power switching applications. It features low RDS(on), fast switching speeds, 100% avalanche tested, low package inductance, a low intrinsic rectifier, and high current handling capabilities. This device is suitable for a wide range of applications including DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor

Product Overview The MSJU11N65 is an N-channel Super-Junction Power MOSFET designed for high-performance applications. It features a very low FOM (RDS(on) x Qg), an epoxy meeting UL 94 V-0 flammability rating, and Moisture Sensitivity Level 1. This device is Halogen Free available upon request and Lead Free/RoHS Compliant. It is suitable for applications requiring efficient power switching. Product Attributes Brand: MCCSEMI Flammability Rating: UL 94 V-0 Moisture Sensitivity

Product OverviewThe 2N6660 is an enhancement-mode, N-Channel, Vertical DMOS FET utilizing a silicon-gate manufacturing process. It offers the power-handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high

Product OverviewThe MDD2304 is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers 5V logic level control and is available in a Pb-free, RoHS compliant SOT23 package.Product AttributesBrand: MDD2304Channel Type: N-ChannelMode: Enhancement ModePackage: SOT23Compliance: PbFree, RoHS CompliantTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitElectri

Product Overview The LBSS139WT1G and S-LBSS139WT1G are N-Channel Power MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable. Featuring a low threshold voltage (VGS(th): 0.5V - 1.5V), they are ideal for low-voltage applications. The MOSFETs offer ESD protection up to 1500V and are RoHS compliant and Halogen Free. They are supplied in a SC-70 (SOT-323) package.

Product Overview The LP2307LT1G and S-LP2307LT1G are P-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD. These devices utilize advanced trench process technology and a high-density cell design for ultra-low on-resistance. They are designed for applications requiring a small package outline and are available as Surface Mount Devices (SMD) in the SOT-23 (TO-236AB) package. The S-prefix variants are qualified for automotive and other applications requiring unique

Product Overview The LESHAN RADIO COMPANY, LTD. LBSS138LT1G is an N-Channel Power MOSFET designed for low voltage applications. It features a low threshold voltage (VGS(th): 0.5V...1.5V) and a miniature SOT-23 surface mount package, making it ideal for space-constrained designs. Typical applications include DC-DC converters and power management in portable and battery-powered devices such as computers, printers, PCMCIA cards, cellular, and cordless telephones. The device is

Product OverviewThe ME2309 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Its super high density cell design offers

Product OverviewThe ME25N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include low RDS(ON) at

Product Overview The BSS123K is an N-Channel MOSFET designed for various applications. It features ESD protection up to 2KV (HBM), a Moisture Sensitivity Level 1 rating, and is a Halogen Free, "Green" Device. The epoxy meets UL 94 V-0 flammability rating, and the device is Lead Free/RoHS Compliant. It operates within a junction temperature range of -55C to +150C. Product Attributes Brand: MCCSEMI.COM Product Code: BSS123K Type: N-Channel MOSFET Certifications: UL 94 V-0

Product OverviewThe MS80N65ICC0 H1.02 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features ultra-low RDS(on) and gate charge, ensuring high efficiency and fast switching. This device is 100% UIS tested and RoHS compliant, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).Product AttributesBrand: MaspowerModel: MS80N65ICC0 H1.02Certifications:

Product OverviewThe MDP10N055TH is a single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd. It offers high performance with excellent on-state resistance and fast switching capabilities. This MOSFET is suitable for industrial applications including low power drives for e-bikes (e-vehicles), DC/DC converters, and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Type: Single N-Channel Trench MOSFETPackage Type: TO-220RoHS