Single FETs, MOSFETs
Split Gate Trench MOSFET MCC MCAC100N08Y-TP with RoHS compliant lead free finish and UL 94 V0 rating
Product Overview This high-density Split Gate Trench MOSFET, designed with an excellent package for heat dissipation, offers low RDS(ON) and is built using advanced cell design. It is a Halogen-free "Green" device, meeting UL 94 V-0 flammability rating, and is lead-free and RoHS compliant. Suitable ...
Low threshold voltage transistor MICROCHIP DN2540N5-G designed for fast switching and low capacitance
Supertex DN2540 N-Channel Depletion-Mode Vertical DMOS FET The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor designed with an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it ...
Power MOSFET MCC SI3420A TP featuring moisture sensitivity level 1 and lead free finish for industrial
Product Overview The SI3420A is an N-channel MOSFET designed for high power and current handling capabilities. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This MOSFET is available in a lead-free finish and is RoHS ...
Power device LRC LP2317DT2AG 20V P Channel MOSFET with RoHS compliance and halogen free construction
Product Overview The LP2317DT2AG is a 20V P-Channel MOSFET designed for various power management applications. It features low RDS(ON) due to trench technology, offering efficient performance with low thermal impedance and fast switching speeds. This device is RoHS compliant and Halogen Free. The 'S...
Low On Resistance P Channel MOSFET MATSUKI ME4835 for Power Switching in Portable Electronic Devices
Product OverviewThe ME4835 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones, notebook computers, and other battery...
Loss N Channel MOSFET MDD Microdiode Semiconductor SI2302S Featuring Advanced Trench Process SOT 23
Product OverviewThe SI2302S is a high-performance N-Channel Enhancement Mode MOSFET in a SOT-23 package. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient switching and low ...
Surface Mount Power MOSFET MATSUKI ME96N03-G Ideal for Notebook Computers and Mobile Device Circuits
Product OverviewThe ME96N03-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Power MOSFET MASPOWER MS25N65HCT1 with ultra low gate charge and 650 volt drain source voltage rating
Product OverviewThe MS25N65HCT1 is a high-performance power semiconductor from Maspower, designed for demanding power applications. It features ultra-low RDS(on) and gate charge, along with 100% UIS tested reliability. This device is ideal for power factor correction (PFC), switched-mode power ...
Power MOSFET MASPOWER MS330N15JDF4 with fast switching speeds and high avalanche current capability
Product OverviewThe MS330N15JDF4(C0) is a high-performance power MOSFET from Maspower, designed for efficient power switching applications. It features low RDS(on), fast switching speeds, 100% avalanche tested, low package inductance, a low intrinsic rectifier, and high current handling capabilities...
switching MOSFET MASPOWER MS4N1350 with 1500 volt drain source voltage and low intrinsic capacitance
Product Overview The MS4N1350/S/T/E/W is a high-performance MOSFET designed for switching applications. It features a high breakdown voltage (VDS=1500V), a continuous drain current of 4A, and low on-resistance (RDS(on)
N channel Super Junction Power MOSFET MCC MSJU11N65 TP with Low FOM and UL 94 V 0 Flammability Rating
Product Overview The MSJU11N65 is an N-channel Super-Junction Power MOSFET designed for high-performance applications. It features a very low FOM (RDS(on) x Qg), an epoxy meeting UL 94 V-0 flammability rating, and Moisture Sensitivity Level 1. This device is Halogen Free available upon request and ...
Microdiode Semiconductor MDD MDD2304 30V N Channel Enhancement Mode MOSFET with Pb Free SOT23 package
Product OverviewThe MDD2304 is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers 5V logic level control and is available in a Pb-free, RoHS compliant SOT23 package.Product ...
High breakdown voltage MICROCHIP 2N6660 N Channel Vertical DMOS FET for switching and amplification
Product OverviewThe 2N6660 is an enhancement-mode, N-Channel, Vertical DMOS FET utilizing a silicon-gate manufacturing process. It offers the power-handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from ...
N Channel Power MOSFET LRC LBSS139WT1G Offering Low Threshold Voltage and High ESD Protection Level
Product Overview The LBSS139WT1G and S-LBSS139WT1G are N-Channel Power MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable. Featuring a low threshold voltage (VGS(th): 0.5V - 1.5V), they ...
Surface Mount Device P Channel MOSFET LRC LP2307LT1G with High Density Cell and Low On Resistance
Product Overview The LP2307LT1G and S-LP2307LT1G are P-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD. These devices utilize advanced trench process technology and a high-density cell design for ultra-low on-resistance. They are designed for applications requiring a small package ...
Power MOSFET LRC LBSS138LT1G N Channel SOT23 Package Suitable for Computer and Printer Devices
Product Overview The LESHAN RADIO COMPANY, LTD. LBSS138LT1G is an N-Channel Power MOSFET designed for low voltage applications. It features a low threshold voltage (VGS(th): 0.5V...1.5V) and a miniature SOT-23 surface mount package, making it ideal for space-constrained designs. Typical applications ...
Power management P channel MOSFET MATSUKI ME2309 G offering low inline power loss in compact package
Product OverviewThe ME2309 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
Low resistance power transistor MATSUKI ME25N06 optimized for power management in mobile electronics
Product OverviewThe ME25N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
MCC BSS123K TP N Channel MOSFET Offering 100V Drain Source Voltage and 2KV ESD Protection Capability
Product Overview The BSS123K is an N-Channel MOSFET designed for various applications. It features ESD protection up to 2KV (HBM), a Moisture Sensitivity Level 1 rating, and is a Halogen Free, "Green" Device. The epoxy meets UL 94 V-0 flammability rating, and the device is Lead Free/RoHS Compliant. ...
N channel MOSFET MASPOWER MS80N65ICC0 suitable for power factor correction switched mode power supplies and UPS systems
Product OverviewThe MS80N65ICC0 H1.02 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features ultra-low RDS(on) and gate charge, ensuring high efficiency and fast switching. This device is 100% UIS tested and RoHS compliant, making it suitable for power ...
