Single FETs, MOSFETs

Product Overview The SI2304 is an N-Channel MOSFET featuring Trench LV MOSFET Technology, designed for voltage-controlled small signal switching applications. It is a "Green" device, Halogen Free, and meets UL 94 V-0 flammability rating. This RoHS compliant component is suitable for a wide operating temperature range from -55C to +150C. Product Attributes Brand: MCC SEMI Technology: Trench LV MOSFET Moisture Sensitivity Level: 1 Flammability Rating: UL 94 V-0 Compliance:

Product OverviewThe MS140N30HGB3/C0 is a high-performance Maspower MOSFET designed for power switching applications. It features a VDS of 300V and an ID of 140A with an ultra-low RDS(on) of less than 35m at VGS=10V, achieved through a high-density cell design. Key advantages include low gate charge and improved dv/dt capability, making it suitable for isolated DC/DC converters in Telecom and Industrial sectors, as well as synchronous rectification in DC/DC Converters. This

Product OverviewThe MS30N90ICE0/C0 is a high-performance power semiconductor from Maspower, designed for demanding applications. It features very low RDS(on) and Qg, ensuring efficient operation. The device is 100% avalanche tested and easy to drive, making it a practical choice for Uninterruptible Power Supply and Power Factor Correction systems. It is also RoHS compliant.Product AttributesBrand: MaspowerCertifications: RoHS compliantTechnical SpecificationsModelDrain-Source

Product Overview The LESHAN RADIO COMPANY, LTD. S-LSI1012LT1G is an N-Channel 1.8-V (G-S) Power MOSFET designed for high-side switching applications. It features TrenchFET technology, offering low on-resistance and a low threshold voltage for ease of driving and low-voltage operation. The device includes Gate-Source ESD protection, fast switching speeds, and is suitable for battery-operated systems and power supply converter circuits. Applications include drivers for relays,

MDF3752TH P-Channel Trench MOSFETThe MDF3752TH is a P-Channel Trench MOSFET from Magnachip Semiconductor Ltd., leveraging advanced Trench MOSFET Technology to deliver high performance in on-state resistance and switching characteristics. Its low RDS(ON) and low Gate Charge offer significant benefits in various applications. This MOSFET is designed for inverters and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Part Number: MDF3752THTechnolo

Product OverviewThe ME4565A series are N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology is optimized to minimize on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount

Product OverviewThe MS15N170HGC0 H1.01 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high-speed switching, and very low on-resistance. This makes it ideal for use in PV inverters and other switching applications.Product AttributesBrand: MaspowerModel: MS15N170HGC0 H1.01Technical SpecificationsParameterSymbolTest

Product OverviewThe ME4565AD4 is a series of N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package

Product OverviewThe MDDG04R01L is a 40V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. It offers extremely low RDS(on) of 0.85 m at VGS = 10V, ID = 75A, and superior switching performance with a best-in-class soft body diode. This MOSFET is 100% UIS and dVDS tested.Product AttributesBrand: MDD SemiconductorOrigin: Shenzhen (implied by disclaimer)Material: Not specifiedColor: Not specifiedCertif

Product Overview The LBSS138WT1G and S-LBSS138WT1G are N-Channel Power MOSFETs designed for low voltage applications. The S-prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These devices offer a low threshold voltage (VGS(th): 0.5V to 1.5V) and compliance with RoHS and Halogen Free requirements. Product Attributes Brand: Leshan Radio Company, LTD. Product

Product OverviewThe MPT012N08-T is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy, making it ideal for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNSCertifications: RoHS productTechnical SpecificationsParameterValueUnitDescriptionVDSS80VDrain-Source VoltageID360AContinuous

Product OverviewThe MDD30P04D is a 40V P-Channel Enhancement Mode MOSFET designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies. It utilizes Microdiode's advanced Power Trench technology, optimized for low on-state resistance and superior switching performance with a best-in-class soft body diode. Key features include extremely low reverse recovery charge, a maximum RDS(on) of 18m, and 100% UIS tested

Product Overview The LP4217T1G is a 20V P-Channel (D-S) MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. The product complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS, Halogen Free Device Type: P-Channel (D-S) MOSFET Technology: Trench technology Technical

Product OverviewThe ME2345A is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring efficient switching and low power loss in a compact surface-mount package.Product AttributesBrand: ME (implied by model number)Product Line:

Product OverviewThe Magnachip MDQ20N116PTFTH is a single N-channel Trench MOSFET designed for high-performance applications. Featuring Trench power MOSFET technology, it offers enhanced avalanche ruggedness and improved diode reverse recovery time for increased efficiency. This MOSFET is ideal for motor drive systems, battery-powered systems, and DC/DC and AC/DC converters, operating reliably up to a maximum junction temperature of 175C.Product AttributesBrand: Magnachip

Product Overview The LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters. The material complies with RoHS requirements and is Halogen

Product Overview The SI1012 is an N-Channel MOSFET designed for various applications. It features a low threshold voltage, ESD protected gate, and is housed in a SOT-523 package. The epoxy material meets UL 94 V-0 flammability rating and it offers Moisture Sensitivity Level 1. This MOSFET is available in Halogen Free and Lead Free/RoHS Compliant options. It is suitable for applications requiring efficient switching and low power dissipation. Product Attributes Brand: MCC

Product OverviewThe MMIS90R1K4P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This device provides designers with the advantage of low EMI and reduced switching losses, making it suitable for applications requiring high efficiency and low power loss.Product AttributesBrand: Magnachip Semiconductor Ltd.Material: N

Product Overview The SI3401AHE3 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(on) and exceptional on-resistance and maximum DC current capability. This AEC-Q101 qualified device features a high-density cell design and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power handling and reliable performance. Product Attributes Brand: MCC (Micro Commercial Components) Model: SI3401AHE3 Channel

Product OverviewThe MDD1951 is a single N-Channel Trench MOSFET from MagnaChip Semiconductor, utilizing advanced trench MOSFET technology. It offers high performance in on-state resistance, switching performance, and reliability, with low RDS(ON) and low gate charge providing superior benefits in applications such as inverters and general-purpose applications.Product AttributesBrand: MagnaChip Semiconductor Ltd.Certifications: Halogen FreeTechnical SpecificationsCharacteristi