Single FETs, MOSFETs
ESD Protected N-Channel 60 Volt Power MOSFET LRC LBSS260DW1T1G for High Speed Switching Applications
Product Overview This N-Channel 60-V Power MOSFET is designed for high-speed switching applications. It offers ESD protection and complies with RoHS requirements and Halogen Free standards. The 'S-' prefix variants are qualified for automotive and other applications with unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. It is suitable for use in portable appliances and load switch applications. Product Attributes Brand: Leshan
Surface mount SOT 23 package N channel MOSFET MATSUKI ME2306D featuring high cell density and loss
Product OverviewThe ME2306D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection
Compact surface mount TSOP 6 package transistor MATSUKI ME3587 designed for battery powered circuits
Product OverviewThe ME3587 is a series of N- and P-Channel logic enhancement mode power field-effect transistors utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in compact surface-mount packages. Key features include
power MOSFET MagnaChip Semicon MDY10N025RH designed for operation in motor inverters and battery systems
Product OverviewThe Magnachip Power Technology MDY10N025RH is a single N-channel Trench MOSFET designed for high-power applications. It leverages advanced Magnachip's MV MOSFET Technologies to deliver high performance in on-state resistance, fast switching, and parallel performance. The MDY10N025RH is an ideal solution for applications demanding excellent thermal behavior, such as motor inverters, battery management, and power inverters. Its unique driver source pin design
power MOSFET MASPOWER MS350N10JDC0 designed for battery chargers DC DC converters and power supplies
Product OverviewThe MS350N10JDC0 H1.01 Maspower is a high-performance power semiconductor designed for demanding applications. It features low RDS(on), fast switching capabilities, and 100% avalanche testing for reliability. Its low package inductance and low intrinsic rectifier contribute to efficient operation. This product is ideal for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power
High Cell Density DMOS Trench P Channel MOSFET MATSUKI ME20P06 G with Loss and Compact TO 252 Package
Product OverviewThe ME20P06 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits where low power loss is critical in a compact surface-mount package. Key features include exceptionally low RDS(ON) and high DC
Compact Dual N Channel Power Transistor MATSUKI ME4954-G with Logic Enhancement Mode and Dissipation
Product OverviewThe ME4954 is a Dual N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits. Its low in-line power loss and very small outline surface mount package are key advantages.Product AttributesBrand: Matsuki
P channel transistor MICRONE MEM2307XG with dissipation and advanced DMOS trench technology in SOT23
Product OverviewThe MEM2307XG is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is particularly suited for low voltage applications, offering low power dissipation in a subminiature SOT23 surface mount package. Key features include ultra-low on-resistance and a high-density cell design.Product AttributesBrand: MEM2307XG SeriesOrigin: www.microne.com.cnPackage: SOT23Technical
Low Threshold Voltage N Channel Power MOSFET LRC LBSS139DW1T1G with ESD Protection and RoHS Compliance
Product Overview The LBSS139DW1T1G and S-LBSS139DW1T1G are N-Channel Power MOSFETs designed for general-purpose applications. The S-prefix variants are specifically tailored for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V), making them ideal for low-voltage applications. They also offer ESD protection up to 1500V.
High voltage MOSFET MASPOWER MS05N250HGE0 designed for switching in inverter and power supply systems
Product OverviewThe MS05N250HGE0 H1.02 Maspower is a high-voltage power MOSFET designed for high-speed switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, making it suitable for demanding power supply and inverter applications.Product AttributesBrand: MaspowerModel: MS05N250HGE0 H1.02Technical SpecificationsParameterSymbolTest conditionsMinTypMaxUnitDrain-source breakdown voltageV(BR
High Cell Density Trench Technology in Megain MGD60P06L P channel MOSFET with 60 Volt Voltage Rating
Product OverviewThe MGD60P06L is a P-channel MOSFET designed for various power management applications. It features a voltage rating of -60V and a low on-state resistance of typically 60m at VGS=10V. Key advantages include super low gate charge, 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This device is suitable for load switching, PWM applications, and general power management tasks.Product AttributesBrand:
Thermal Management MCC MCAC75N02 TP N Channel MOSFET with RoHS Compliance and Halogen Free Construction
Product Overview The MCAC75N02 is an N-Channel MOSFET featuring an advanced Trench Cell Design, offering low thermal resistance and a halogen-free construction. This component is RoHS compliant and designed for operation within a wide temperature range of -55C to +150C. Its robust design includes a UL 94 V-0 flammability rating for its epoxy encapsulation. The device is suitable for various applications requiring reliable power switching and efficient thermal management.
Extended Trench Gate N Channel MOSFET MATSUKI MEE3710-G for Medium Voltage Power Management Solutions
Product OverviewThe MEE3710-G is a N-Channel enhancement mode power field effect transistor utilizing Force-MOS patented Extended Trench Gate (ETG) technology. This advanced technology is optimized to reduce on-state resistance and gate charge, while enhancing avalanche capability. It is particularly suitable for medium voltage applications such as chargers, adapters, notebook computer power management, and other lighting dimming powered circuits. Its low in-line power loss
Low Voltage Drive N Channel Power MOSFET LRC LNTK3043NT5G Ideal for High Density PCB Manufacturing
Product Overview The LNTK3043NT5G and S-LNTK3043NT5G are N-Channel Power MOSFETs designed for high-density PCB manufacturing. These devices feature a significantly smaller footprint and thinner profile compared to SC-89 packages, making them ideal for extremely thin environments like portable electronics. Their low voltage drive and low threshold levels (< 1.3 V) ensure compatibility with portable equipment and standard logic level gate drives, facilitating future migration
power MOSFET MASPOWER MS40N15JDD0 150V 40A rating low on resistance and avalanche tested for UPS systems
Product OverviewThe MS40N15JDD0 H1.02 from Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. It features a 150V/40A rating with a low on-resistance of 29m (typ.) at VGS=10V, low Crss (41pF typ.), and is 100% avalanche tested for enhanced reliability and ruggedness. This RoHS-compliant product is ideal for high-efficiency switch mode power supplies and electronic lamp ballasts based on half-bridge configurations, as well as UPS systems
20V P Channel MOSFET LRC LP3443LT1G Featuring Low RDS ON and High Density Cell Design for Automotive
Product Overview The LP3443LT1G and S-LP3443LT1G are 20V P-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and high-density cell design for ultra-low on-resistance. These devices are suitable for automotive and other applications requiring unique site and control change requirements, with the 'S-' prefix variants being AEC-Q101 qualified and PPAP capable. They offer excellent performance with low RDS(ON) at various gate-source voltages and
High Cell Density Dual N Channel Power Transistors MATSUKI ME6980ED for Power Management in Devices
Product OverviewThe ME6980ED Dual N-Channel logic enhancement mode power field effect transistors are manufactured using high cell density, DMOS trench technology. This advanced process is optimized to minimize on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface
Halogen Free RoHS Compliant 100V N Channel MOSFET LRC LN7612HDT1WG for Networking Load Switching and LED Lighting
Product Overview The LN7612HDT1WG is a 100V N-Channel MOSFET designed for applications such as networking, load switching, and LED lighting. It offers improved dv/dt capability, fast switching, and is 100% EAS guaranteed. The material complies with RoHS requirements and is Halogen Free. Product Attributes Brand: Leshan Radio Company, LTD. Product Line: LN7612HDT1WG Channel Type: N-Channel Material Compliance: RoHS, Halogen Free Device Marking: LN7612H Packaging: 3000/Tape
Power MOSFET MS15N100HGC0 featuring 1000V VDS and 15A continuous drain current for electronic devices
Product OverviewThe MS15N100HGC0/T1 H1.05 Maspower is a high-efficiency power semiconductor designed for demanding switching applications. It features a high breakdown voltage (VDS=1000V) and a continuous drain current of 15A. Key advantages include low Crss, low gate charge, and improved dv/dt capability, making it ideal for high-efficiency switch mode power supplies and electronic lamp ballasts based on half-bridge configurations, as well as UPS systems.Product AttributesBr
MASPOWER MS13N20HGD0 N channel MOSFET with 140W power dissipation and 52A pulse drain current rating
Product OverviewThe MS13N20HGD0 H1.01 Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. It features low gate charge, low Crss (typical 25pF), and fast switching capabilities, making it ideal for high-efficiency switch mode power supplies and electronic lamp ballasts. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring robust performance and reliability. It is a RoHS compliant product.Product AttributesBran
