Single FETs, MOSFETs

Product Overview The ME95N03 is an N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as LCD inverters, computer power management, and DC to DC converter circuits requiring low in-line power loss. Key features include exceptionally low RDS(ON) and high DC current capability. Product Attributes Brand:

Product OverviewThe MS120P20HDC1 is a high-performance Maspower MOSFET designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications. It features a VDS of -200V, ID of -120A, and a low RDS(on) of 55m at -1A. Key advantages include low gate charge and improved dv/dt capability, making it suitable for hard-switched and high-frequency circuits.Product AttributesBrand: MaspowerModel: MS120P20HDC1Technic

Product Overview The LESHAN RADIO COMPANY, LTD. LBSS123LT1G is a N-CHANNEL POWER MOSFET in a SOT-23 package. It offers a Pb-Free package option and is available in automotive-grade (S- prefix) variants that are AEC-Q101 Qualified and PPAP Capable. This device is suitable for various applications requiring efficient power switching. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Package Type: SOT-23 Technology: N-CHANNEL POWER MOSFET Certifications: AEC-Q101 Qualified

Product OverviewThe MS60N350DD1 is a high-performance N-channel MOSFET from Maspower, designed for demanding power applications. It features a VDS of 60V and an ID of 30A, with a low RDS(ON) of 35m at VGS=10V. Its Super High Dense Cell Design ensures reliability and ruggedness, making it suitable for power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and power management systems.Product AttributesBrand: MaspowerModel:

Product Overview The LESHAN RADIO COMPANY, LTD. L2SK801LT1G is a Small Signal N-Channel MOSFET designed for various electronic applications. This device features a SOT-23 (TO-236AB) package, offering a 310 mAmps continuous drain current and 60 Volts drain-source voltage. It is characterized by its low on-state resistance and efficient switching capabilities, making it suitable for general-purpose switching and amplification tasks. Available in Pb-Free packaging. Product

Product OverviewThe TN0104 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for

Product OverviewThe MDD14N25C is an N-channel MOSFET manufactured using MagnaChip's advanced MOSFET technology. It offers low on-state resistance, high switching performance, and excellent quality, making it suitable for SMPS, high-speed switching, and general-purpose applications. Key features include a VDS of 250V, ID of 10.2A, and RDS(ON) of 0.28 @ VGS = 10V. Applications include power supplies, motor control, and high current, high-speed switching.Product AttributesBrand:

Product Overview The LP3407LT1G is a 30V P-Channel Enhancement-Mode MOSFET manufactured by LESHAN RADIO COMPANY, LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for load switch and PWM applications. This device is available in the SOT23 (TO236AB) package. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Package Type: SOT23 (TO236AB) Technology: Advanced Trench Mode: P-Channel Enhancement-Mode Certifications:

Product Overview The SI2305B is a P-Channel MOSFET designed for various applications. It features low RDS(ON) and meets UL 94 V-0 flammability rating. This device is moisture sensitivity level 1 and is RoHS compliant, with a halogen-free option available. It operates within a junction temperature range of -55C to +150C. Product Attributes Brand: MCCSEMI Flammability Rating: UL 94 V-0 Moisture Sensitivity Level: 1 RoHS Compliant: Yes Halogen Free: Available upon request (add "

Product OverviewThe ME55N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is well-suited for very small outline surface mount packages.Product AttributesBrand: Not specifiedOrigin:

Product Overview The LESHAN RADIO COMPANY, LTD. LNTK2575LT1G is a single, N-Channel, small signal MOSFET with ESD protection, housed in a SOT-23 (3-Leads) package. It features advanced planar technology for fast switching and low RDS(on), contributing to higher efficiency and extended battery life. This device is suitable for applications such as boost and buck converters, load switches, and battery protection. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Device Code:

MDF1922 Single N-Channel Trench MOSFET 100V The MDF1922 utilizes Magnachip's advanced MOSFET Technology, offering superior on-state resistance and fast switching performance. This MOSFET is ideal for synchronous rectification in server/adapter applications and general-purpose use. Product Attributes Brand: Magnachip Semiconductor Ltd. Certifications: RoHS Status: Halogen Free Technical Specifications Characteristics Symbol Rating Unit Test Condition Min Typ Max Absolute

Product OverviewThe ME20N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small outline surface mount package.Product AttributesBrand: Not

Product Overview The LN8342DT1AG is a high-performance N-Channel 30-V (D-S) MOSFET featuring low RDS(on) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Power Routing, DC/DC Conversion, and Motor Drives. This device is Halogen Free and compliant with RoHS requirements. Product Attributes Brand: Leshan Radio Company, LTD. Material: Halogen Free RoHS Compliance: Yes Channel Type: N-Channel Package Type: DFN3030-8B

Product DescriptionThis 20V N-channel MOSFET is based on MDD's unique device design, achieving low RDS(on), fast switching, and good ESD rating performance. It is suitable for load switching in portable devices, battery-powered systems, DC-DC converters, and LCD display inverters.Product AttributesBrand: MicrodiodeOrigin: ShenzhenCertifications: JESD22-A114-B ESD rating of class 2 per human body model.Technical SpecificationsParameterSymbolConditionUnitMinTypMaxAbsolute

Product Overview The LDN3408ET1G and S-LDN3408ET1G are 30V N-Channel Enhancement Mode MOSFETs designed for various applications. These devices offer excellent ESD protection (2KV HBM) and low on-state resistance (RDS(ON)) across different gate-source voltages and drain currents. They are RoHS compliant and Halogen Free. The S-prefix variant is specifically designed for automotive and other applications requiring unique site and control change requirements, and is AEC-Q101

Product OverviewThe MS30N100HGC1/C0 H1.06 Maspower is a high-performance power semiconductor designed for demanding applications. It features a high breakdown voltage of 1000V and a continuous drain current of 30A, with a low on-resistance of less than 0.38. This device is avalanche tested and current rated, incorporating a fast intrinsic rectifier for enhanced performance. Its design emphasizes high power density, ease of mounting, and space savings, making it suitable for

Product OverviewThe ME2301 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in a compact surface mount package.Product AttributesBrand: Not explicitly stated, but

Product Overview The LNTR4003NLT1G and S-LNTR4003NLT1G are N-Channel, single MOSFETs with Gate ESD protection, designed for various switching applications. They offer a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. These devices are RoHS compliant and Halogen Free.

Product Overview The SK3018 is a MOSFET designed for low on-resistance and low input capacitance. It meets UL 94V-0 flammability rating and is available in RoHS compliant and Halogen Free (suffix 'FH') options. This device is suitable for applications requiring efficient power switching with a wide operating junction temperature range. Product Attributes Brand: Micro Commercial Components Corp (MCC) RoHS Compliant: Yes (indicated by 'P' suffix) Halogen Free: Available upon