Single FETs, MOSFETs

Product Overview The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various applications including low side load switches, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. These MOSFETs are RoHS compliant and Halogen Free, with the S-prefix variants offering AEC-Q101 qualification and PPAP capability for automotive and other demanding applications requiring unique site and control change requiremen

Product OverviewThe ME13N10A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include an RDS

Product Overview The LSI1013LT1G is a P-Channel 1.8-V (G-S) TrenchFET Power MOSFET from LESHAN RADIO COMPANY, LTD. It features Gate-Source ESD protection up to 2000 V, enabling ease in driving switches and low-voltage operation. With low on-resistance (1.2 typical) and a low threshold voltage (0.8 V typical), this MOSFET is ideal for high-speed circuits and low battery voltage applications. Its fast switching speed (14 ns) makes it suitable for various driver applications

Product OverviewThe MS55N100HGB3 is a high-performance N-channel Power MOSFET from Maspower, designed for high power density applications. It features a VDS of 1000V, a continuous drain current of 55A, and a low on-resistance (RDS(on)) of less than 0.28. This device is avalanche tested and current rated, offering a fast intrinsic rectifier for efficient operation. Its robust design makes it easy to mount and space-saving, suitable for demanding power applications.Product

Product Overview The S-LN2308LT1G is a 60V N-Channel Enhancement-Mode MOSFET designed for power management applications in notebooks, portable equipment, battery-powered systems, and load switching. It offers exceptional on-resistance and maximum DC current capability, with materials compliant with RoHS requirements and Halogen Free. The 'S-' prefix denotes suitability for automotive and other applications with unique site and control change requirements, featuring AEC-Q101

Product OverviewThe MDD2302 is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for load switch, switching circuits, high-speed line drivers, and power management functions. Its key features include a low on-resistance and high-density cell design.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications:

Product Overview The SI3407 is a P-Channel MOSFET designed for various applications. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This device is available in a lead-free finish and is RoHS compliant, with a halogen-free option available upon request by adding the "-HF" suffix. The SI3407 operates within a wide temperature range, from -55C to +150C for both operating junction and storage temperatures.

Product OverviewThis document outlines the MGC054N06L, a product from Megain. Further details on its function, usage, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainModel: MGC054N06LTechnical SpecificationsModelSpecification 1Specification 2Specification 3Specification 4Specification 5Specification 6Specification 7Specification 8Specification 9Specification 10MGC054N06LRev.1.02506251635_Megain-MGC054N06L

Product OverviewThe MMF60R580Q is a power MOSFET from Magnachip Semiconductor Ltd., utilizing advanced super junction technology. This design enables very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. It offers designers the advantage of low EMI and reduced switching loss, making it suitable for various demanding applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Code: MMF60R580QMarking: 60R580QTemperat

Product Overview The SI2306 is an N-Channel MOSFET featuring a high-density cell design for extremely low RDS(ON). It is rugged, reliable, and comes in a surface-mount package. This device meets UL 94 V-0 flammability rating, has a Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power switching and low on-resistance. Product Attributes Brand: MCCSEMI Device Type: N-Channel MOSFET Package: SOT-23

Product OverviewThe ME4925 is a Dual P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product AttributesBrand: Matsuki Electric/Force

Product Overview The LN2604DT2AG is a 60V N-Channel Enhancement MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as DC/DC conversion, power routing, and motor drives. This device is Halogen Free and compliant with RoHS requirements. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: Halogen Free, RoHS Technical Specifications Parameter Symbol Min. Typ. Max. Unit Notes

Product OverviewThe ME2N7002D is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection up

Product OverviewThe ME120N10T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process is engineered to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for applications requiring high performance and efficiency.Product AttributesBrand: Matsuki (implied by datasheet content)Product Variants: ME120N10T (Pb-free), ME120N10T-G

Product OverviewThe ME35N06-G is a high-performance N-Channel logic enhancement mode power MOSFET utilizing advanced DMOS trench technology with high cell density. This design significantly reduces on-state resistance, making it ideal for low-voltage applications such as power management in notebook computers, cellular phones, and other battery-powered devices. Its efficiency in low in-line power loss is particularly beneficial for small outline surface mount packages.Product

Product OverviewThe MS50N100HGF4 H1.03 Maspower is an N-Channel MOSFET featuring low RDS(on) and high current handling capability. It includes a fast intrinsic diode and is avalanche rated, making it suitable for various power conversion applications. Its key advantages include efficient operation and robust performance.Product AttributesBrand: MaspowerModel: MS50N100HGF4 H1.03Technical SpecificationsParameterSymbolTests conditionsMinTypeMaxUnitAbsolute RatingsDrain-Source

Product OverviewThe MDP15N075TH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance, fast switching capabilities, and superior quality. This MOSFET is suitable for industrial applications including Low Power Drives of E-bikes (E-Vehicles), DC/DC converters, and general-purpose applications.Product AttributesBrand: Magnachip Semiconductor Ltd.Product Type:

Product Overview The LPB2305LT1G is a 30V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, including low RDS(ON) at various gate-source voltages and drain currents, making it suitable for advanced applications requiring efficient power management. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance: RoHS requiremen

Product Overview The MCQ4953 is a Dual P-Channel Power MOSFET designed for various applications. It features a lead-free finish and is RoHS compliant, with an option for Halogen Free. The epoxy material meets UL 94 V-0 flammability rating, and it has a Moisture Sensitivity Level 1. This MOSFET is suitable for operation in a wide temperature range from -55C to +150C. Product Attributes Brand: MCC (Micro Commercial Components Corp.) Compliance: Lead Free Finish/RoHS Compliant

Product OverviewThe MS100N60ICB3(C0) is a high-performance N-channel Power MOSFET from Maspower, designed for demanding power applications. It features ultra-low RDS(on) of 33.5m (typ.) and ultra-low gate charge, with 100% UIS tested for reliability. This RoHS compliant component is ideal for Power Factor Correction (PFC), Switched Mode Power Supplies (SMPS), and Uninterruptible Power Supplies (UPS).Product AttributesBrand: MaspowerCertifications: RoHS compliantTechnical