Single FETs, MOSFETs
MASPOWER MS13N20HGD0 N channel MOSFET with 140W power dissipation and 52A pulse drain current rating
Product OverviewThe MS13N20HGD0 H1.01 Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. It features low gate charge, low Crss (typical 25pF), and fast switching capabilities, making it ideal for high-efficiency switch mode power supplies and electronic lamp ...
N Channel MOSFET LRC L2N7002SLT1G Designed for Level Shift Circuits and Portable Device Applications
Product Overview The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various applications including low side load switches, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. These MOSFETs are RoHS compliant and Halogen Free...
Surface Mount N Channel Power MOSFET MATSUKI ME13N10A with Low RDS ON and High Pulsed Drain Current
Product OverviewThe ME13N10A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Power MOSFET LRC LSI1013LT1G P Channel 1.8 Volt TrenchFET with fast switching and low on resistance
Product Overview The LSI1013LT1G is a P-Channel 1.8-V (G-S) TrenchFET Power MOSFET from LESHAN RADIO COMPANY, LTD. It features Gate-Source ESD protection up to 2000 V, enabling ease in driving switches and low-voltage operation. With low on-resistance (1.2 typical) and a low threshold voltage (0.8 V ...
N channel Power MOSFET MASPOWER MS55N100HGB3 featuring low on resistance and 1000V drain source voltage
Product OverviewThe MS55N100HGB3 is a high-performance N-channel Power MOSFET from Maspower, designed for high power density applications. It features a VDS of 1000V, a continuous drain current of 55A, and a low on-resistance (RDS(on)) of less than 0.28. This device is avalanche tested and current ...
LRC S LN2308LT1G 60V N Channel Enhancement Mode MOSFET Designed for Portable Equipment and Notebooks
Product Overview The S-LN2308LT1G is a 60V N-Channel Enhancement-Mode MOSFET designed for power management applications in notebooks, portable equipment, battery-powered systems, and load switching. It offers exceptional on-resistance and maximum DC current capability, with materials compliant with ...
MDD Microdiode Semiconductor MDD2302 N Channel MOSFET 20V load switch and power management component
Product OverviewThe MDD2302 is a 20V N-Channel Enhancement Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is suitable for load switch, switching circuits, high-speed line drivers, and power management functions. Its key ...
RoHS Compliant P Channel MOSFET MCC SI3407 TP with UL 94 V0 Flammability Rating and Lead Free Finish
Product Overview The SI3407 is a P-Channel MOSFET designed for various applications. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This device is available in a lead-free finish and is RoHS compliant, with a halogen-free ...
High precision Megain MGC054N06L semiconductor device designed for operation in various electronic systems
Product OverviewThis document outlines the MGC054N06L, a product from Megain. Further details on its function, usage, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainModel: MGC054N06LTechnical SpecificationsModelSpecification ...
power MOSFET MagnaChip Semicon MMF60R580QTH featuring super junction technology and halogen free packaging
Product OverviewThe MMF60R580Q is a power MOSFET from Magnachip Semiconductor Ltd., utilizing advanced super junction technology. This design enables very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. It offers designers the advantage of low EMI and ...
Surface Mount N Channel MOSFET MCC SI2306 TP Featuring Low On Resistance and Halogen Free Compliance
Product Overview The SI2306 is an N-Channel MOSFET featuring a high-density cell design for extremely low RDS(ON). It is rugged, reliable, and comes in a surface-mount package. This device meets UL 94 V-0 flammability rating, has a Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant...
High Cell Density DMOS Trench Technology Dual P Channel MOSFET MATSUKI ME4925 G for Power Management
Product OverviewThe ME4925 is a Dual P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well ...
Low Thermal Impedance 60V N Channel MOSFET LRC LN2604DT2AG Suitable for Motor Drive Applications
Product Overview The LN2604DT2AG is a 60V N-Channel Enhancement MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as DC/DC conversion, power routing, and motor drives. This device is Halogen Free and compliant with ...
Surface Mount N Channel Power Transistor MATSUKI ME2N7002D with ESD Protection and Low Inline Power Loss
Product OverviewThe ME2N7002D is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
High Current N Channel MOSFET ME120N10T with Excellent Thermal Performance and Low Conduction Losses
Product OverviewThe ME120N10T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process is engineered to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ...
Power Management N Channel MOSFET ME35N06 G with Low On Resistance and High Cell Density Design
Product OverviewThe ME35N06-G is a high-performance N-Channel logic enhancement mode power MOSFET utilizing advanced DMOS trench technology with high cell density. This design significantly reduces on-state resistance, making it ideal for low-voltage applications such as power management in notebook ...
High Current MASPOWER MS50N100HGF4 MOSFET with 1000V Drain Source Voltage and Avalanche Rated Design
Product OverviewThe MS50N100HGF4 H1.03 Maspower is an N-Channel MOSFET featuring low RDS(on) and high current handling capability. It includes a fast intrinsic diode and is avalanche rated, making it suitable for various power conversion applications. Its key advantages include efficient operation ...
Single N Channel Trench MOSFET MagnaChip Semicon MDP15N075TH Suitable for E Vehicle Drives and Industrial
Product OverviewThe MDP15N075TH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance, fast switching capabilities, and superior quality. This MOSFET is suitable for industrial ...
Dual P Channel Power MOSFET MCC MCQ4953 TP with Lead Free Finish RoHS Compliant and UL 94 V 0 Epoxy
Product Overview The MCQ4953 is a Dual P-Channel Power MOSFET designed for various applications. It features a lead-free finish and is RoHS compliant, with an option for Halogen Free. The epoxy material meets UL 94 V-0 flammability rating, and it has a Moisture Sensitivity Level 1. This MOSFET is ...
Power Management MOSFET LRC LPB2305LT1G 30V P Channel Enhancement Mode with Ultra Low On Resistance
Product Overview The LPB2305LT1G is a 30V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, including low RDS(ON) at various gate-source voltages and drain ...
