Single FETs, MOSFETs
Single N Channel MOSFET with Gate ESD Protection LRC LNTR4003NLT1G Featuring Low Gate Voltage Threshold
Product Overview The LNTR4003NLT1G and S-LNTR4003NLT1G are N-Channel, single MOSFETs with Gate ESD protection, designed for various switching applications. They offer a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching. The S-prefix variant is AEC...
Power MOSFET MagnaChip Semicon MMUB65R115RURH optimized for low gate charge and high power dissipation in electronic devices
Product OverviewThe MMUB65R115RU(P) is a power MOSFET utilizing Magnachip's advanced super junction technology, designed for high efficiency with very low on-resistance and gate charge. Optimized charge coupling technology contributes to superior efficiency. This user-friendly device offers ...
Energy DMOS trench transistor MATSUKI ME04N25-G for low voltage power management in portable devices
Product Overview The ME04N25 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications like cellular phone and notebook computer power ...
LRC S-LP7413DT3WG 40V P-Channel MOSFET Featuring Low RDS on and Suitable for Automotive Applications
Product Overview The S-LP7413DT3WG is a 40V P-Channel (D-S) MOSFET from Leshan Radio Company, LTD. It features low RDS(on) trench technology, low thermal impedance, and fast switching speed, making it suitable for load switches, DC/DC conversion, and motor drives. This device complies with RoHS ...
MATSUKI ME95N03T Power MOSFET Featuring N Channel DMOS Trench Technology for Power Management Applications
Product OverviewThe ME95N03T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for power ...
High current MOSFET MASPOWER MS60N06HGB0 60 volt 60 ampere avalanche tested for power supply designs
Product OverviewThe MS60N06HGB0 H1.02 Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features a VDS of 60V and ID of 60A, with improved dv/dt capability and fast switching characteristics. This device is 100% avalanche tested, making it suitable for ...
MOSFET MagnaChip Semicon MDU10N070RH designed for high current synchronous rectification applications
Product OverviewThe MDU10N070RH is a single N-Channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET Technology for high performance in on-state resistance and fast switching. It is suitable for synchronous rectification in server and general-purpose applications.Product ...
High Cell Density DMOS Trench Power Transistor MATSUKI ME2602 N Channel Logic Enhancement Mode Device
Product OverviewThe ME2602 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for applications ...
Power Management Dual P Channel MOSFET MATSUKI ME4953 with Low Voltage Operation and DMOS Technology
Product OverviewThe ME4953 is a Dual P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers. It ...
P Channel TrenchFET Power MOSFET MCC SI2307 TP with UL 94 V0 Flammability Rating and RoHS Compliance
Product Overview The SI2307 is a P-Channel TrenchFET Power MOSFET designed for various applications. It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. Available in a lead-free finish and RoHS compliant, this MOSFET offers a wide operating junction temperature ...
MCC MCAC50P03B TP P Channel Trench Power LV MOSFET optimized for power management and fast switching
Product Overview The MCAC50P03B is a P-Channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON) and high-speed switching. This device is designed for various applications requiring efficient power management. It is moisture sensitivity level 1, halogen-free, and RoHS ...
power switching MOSFET MagnaChip Semicon MMFT65R090RTH with halogen free Pb free plating and tube packing
Product OverviewThe MMFT65R090R is a power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This device provides advantages such as low EMI, low switching loss, and ...
Low on resistance 600V N channel Power MOSFET MagnaChip Semicon MMQ60R044RFTH designed for telecom equipment and EV chargers
Product OverviewThe MMQ60R044RF is a 600V N-channel Power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, combined with an ultra-fast body diode for improved turn-off performance. This MOSFET delivers excellent efficiency and EMI ...
Durable MASPOWER MS20N50FS MOSFET Suitable for Electronic Transformers and Switch Mode Supplies
Product OverviewThe MS20N50FB/FC/FS/FT is a high-performance power MOSFET designed for demanding applications. It features low on-resistance, fast switching speeds, and high input resistance, making it ideal for electronic ballasts, electronic transformers, and switch-mode power supplies. This RoHS ...
High voltage MASPOWER MS1N250HGC0 suitable for industrial power supplies and photovoltaic inverters
Product OverviewThe MS1N250HGC0 H1.02 is a high-performance Maspower component designed for demanding switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, ensuring high-speed switching capabilities. This ...
P Channel Logic Enhancement Mode Power Transistor MATSUKI ME50P06-G Ideal for Low Voltage Applications
Product OverviewThe ME50P06 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
High current Megain MGC017N06L N channel MOSFET suitable for synchronous rectifier and power management
Product Overview The MGC017N06L is an N-channel MOSFET featuring Advanced Trench MOS Technology, designed for high-performance applications. It offers low gate charge and low RDS(ON), ensuring efficient operation. This device is 100% EAS guaranteed and available in a Green Device option. It is ...
MATSUKI ME45N03T G Power MOSFET Featuring High Continuous Drain Current and Low RDS ON for Power Circuits
Product OverviewThe ME45N03T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering extremely low RDS(ON) and exceptional DC current capability. It is designed for power ...
Power field effect transistor MATSUKI ME55N06A-G with high current rating and low on state resistance
Product OverviewThe ME55N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as cellular phones, notebook computer ...
load switch solution LRC LP4565T1G P Channel MOSFET with 60 Volt rating and trench technology design
Product Overview The Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET, specifically the LP4565T1G and LP4565 models, utilizes low RDS(on) trench technology for efficient performance. It features low thermal impedance and fast switching speeds, making it suitable for applications such as load ...
