Single FETs, MOSFETs
Single N Channel Trench MOSFET MagnaChip Semicon MDD1951RH Designed for Inverter and General Purpose
Product OverviewThe MDD1951 is a single N-Channel Trench MOSFET from MagnaChip Semiconductor, utilizing advanced trench MOSFET technology. It offers high performance in on-state resistance, switching performance, and reliability, with low RDS(ON) and low gate charge providing superior benefits in ...
High power Trench MOSFET MagnaChip Semicon MDT15N054PTRH for DC DC and AC DC converter applications
Product OverviewThe Magnachip MDT15N054PTRH is a single N-channel Trench MOSFET designed for high-performance power applications. Featuring enhanced avalanche ruggedness and a maximum junction temperature of 175C, it is ideal for brushed and BLDC motor drive systems, load switches, and DC/DC and AC...
MDD Microdiode Semiconductor MDDG1C120R040K3 N Channel SiC MOSFET 1200V for Robust Power Electronics
Product OverviewThe MDDG1C120R040K3 is a 1200V N-Channel SiC Power MOSFET designed for high-efficiency power conversion applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its robust design is ...
P Channel Vertical DMOS FET Microchip TP2520N8 G with Low Input Capacitance and High Switching Speed
Product OverviewThe TP2520 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for a variety of switching and amplifying applications. It features a low maximum threshold voltage of -2.4V, high input impedance, low input capacitance (125 pF maximum), fast switching speeds, and low on...
Power MOSFET MagnaChip Semicon MMFT70R380PTH 700V N channel device with low gate charge and low EMI
Product OverviewThe MMFT70R380P is a 700V, 0.38 N-channel MOSFET utilizing Magnachip's advanced super junction technology. This design achieves very low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. The device offers low EMI and low ...
Low gate charge N channel MOSFET Megain MGB032N04L suitable for battery powered systems and DC DC converters
Product OverviewThe MGB032N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low gate charge and fast switching speeds. It is 100% EAS guaranteed and available as a Green Device. This MOSFET is ideal for synchronous rectification in DC-DC converters, battery-powered ...
High Cell Density N Channel Power Transistor MATSUKI ME2612 Featuring DMOS Trench Technology Package
Product OverviewThe ME2612 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones ...
MICROCHIP TP2540N8 G Vertical DMOS P Channel FET for Telecommunication and Photovoltaic Applications
Product OverviewThe TP2540 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for various switching and amplifying applications. It features a low threshold voltage, high input impedance, low input capacitance, and fast switching speeds. Its vertical DMOS structure and silicon-gate ...
Low Voltage Dual N Channel Power Transistor MATSUKI ME4946 for Battery Powered Circuit Solutions
Product OverviewThe ME4946 is a Dual N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
Power Field Effect Transistor MATSUKI ME3205T N Channel Logic Enhancement Mode for Power Management
Product OverviewThe ME3205T is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This design minimizes on-state resistance, offering an extremely low RDS(ON) and exceptional DC current capability. It is suitable for power ...
60V P Channel Power MOSFET LRC S-LPB8660DT0AG Featuring RoHS Compliance and Low Thermal Resistance for Electronics
Product Overview The S-LPB8660DT0AG is a 60V P-Channel Power MOSFET designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. It offers low thermal impedance and fast switching speeds, with material compliance to RoHS requirements and Halogen Free standards. This device is ...
Extended Trench Gate N Channel Power Transistor MATSUKI MEE3710T for Power Conversion and Management
Product OverviewThe MEE3710T is a N-Channel enhancement mode power field effect transistor utilizing Force-MOS patented Extended Trench Gate (ETG) technology. This advanced technology minimizes on-state resistance and gate charge while enhancing avalanche capability. It is particularly suited for ...
heat dissipation MCC MCAC95N06Y-TP N channel MOSFET with Split Gate Trench technology and UL 94 V 0 rating
Product Overview The MCAC95N06Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology for enhanced performance. It offers excellent heat dissipation, a high-density cell design for low RDS(on), and is housed in a DFN5060 package. This device meets UL 94 V-0 flammability rating, is ...
Low on resistance MOSFET MASPOWER MS10N65HCT1 ideal for switched mode power supplies and UPS systems
Product OverviewThe MS10N65HCT1 is a high-performance N-channel MOSFET from Maspower, designed for efficient power management applications. It features ultra-low on-resistance (RDS(on)) of 0.55 and ultra-low gate charge (Qg) of 14nC, ensuring minimal power loss and fast switching speeds. This device ...
MDD Microdiode Semiconductor MDD30N06D N Channel MOSFET with Enhanced Thermal Performance and Operation
Product OverviewThis N-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is ideal for power management in telecom and industrial automation, motor drives, ...
ME7423S G P Channel Logic Enhancement Mode Power Field Effect Transistor with DMOS Trench Technology
Product OverviewThe ME7423 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
MCC SI2321 TP MOSFET Device Featuring Lead Free Finish RoHS Compliance and Halogen Free Construction
Product Overview The SI2321 is a high-performance MOSFET designed for various applications. It offers excellent stability and uniformity, making it a reliable choice for demanding environments. This device is Halogen Free, "Green" compliant, and meets UL 94 V-0 flammability rating, ensuring ...
Surface mount power field effect transistor MATSUKI ME4542 optimized for minimal on state resistance
Product OverviewThe ME4542 is an N and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This technology is optimized for minimal on-state resistance, making the device ideal for low-voltage applications such as power management in ...
N Channel Vertical DMOS FET MICROCHIP DN1509N8 G with high input impedance and low input capacitance
Product Overview The DN1509 is a low threshold, depletion-mode, normally-on N-Channel Vertical DMOS FET. It features high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it suitable for a variety of switching and amplifying applications. Its advanced ...
P Channel MOSFET MCC MCU20P10 TP Featuring Advanced Trench Process and UL 94 V 0 Flammability Rating
Product Overview The MCU20P10 is a P-Channel MOSFET featuring Advanced Trench Process Technology and a High Density Cell Design for ultra-low on-resistance. It offers a reliable and rugged construction, with an epoxy that meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This ...
