Single FETs, MOSFETs

Product OverviewThe MDDG1C120R040K3 is a 1200V N-Channel SiC Power MOSFET designed for high-efficiency power conversion applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its robust design is resistant to latch-up, making it suitable for demanding applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor

Product OverviewThe Magnachip MDT15N054PTRH is a single N-channel Trench MOSFET designed for high-performance power applications. Featuring enhanced avalanche ruggedness and a maximum junction temperature of 175C, it is ideal for brushed and BLDC motor drive systems, load switches, and DC/DC and AC/DC converters. Its Trench power MOSFET technology ensures efficient operation with low on-state resistance and high current handling capabilities.Product AttributesBrand: Magnachip

Product OverviewThe TP2520 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for a variety of switching and amplifying applications. It features a low maximum threshold voltage of -2.4V, high input impedance, low input capacitance (125 pF maximum), fast switching speeds, and low on-resistance. This device is free from secondary breakdown and thermal runaway, making it suitable for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic

Product OverviewThe MMFT70R380P is a 700V, 0.38 N-channel MOSFET utilizing Magnachip's advanced super junction technology. This design achieves very low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. The device offers low EMI and low switching loss, providing an advantage for designers.Product AttributesBrand: Magnachip Semiconductor Ltd.Package: TO-220FTPacking: TubeCertifications: Halogen FreeMaterial: Green

Product OverviewThe MGB032N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low gate charge and fast switching speeds. It is 100% EAS guaranteed and available as a Green Device. This MOSFET is ideal for synchronous rectification in DC-DC converters, battery-powered systems, and backlighting applications.Product AttributesBrand: MEGAINProduct Code: MGB032N04LPackage: PDFN 3x3Quantity: 3000 / Tape & ReelMarking: MGB032N04LCertifications: Green

Product OverviewThe ME2612 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss within a compact surface-mount package.Product AttributesB

Product OverviewThe TP2540 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for various switching and amplifying applications. It features a low threshold voltage, high input impedance, low input capacitance, and fast switching speeds. Its vertical DMOS structure and silicon-gate manufacturing process provide the power handling capabilities of bipolar transistors with the inherent advantages of MOS devices, such as a positive temperature coefficient and freedom from

Product OverviewThe ME4946 is a Dual N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.Product AttributesBrand: DCCProduct

Product OverviewThe ME3205T is an N-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This design minimizes on-state resistance, offering an extremely low RDS(ON) and exceptional DC current capability. It is suitable for power management and DC/DC converter applications.Product AttributesBrand: Not explicitly stated, but implied by model numbers ME3205T/ME3205T-G.Origin: Not explicitly stated.Material:

Product Overview The S-LPB8660DT0AG is a 60V P-Channel Power MOSFET designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. It offers low thermal impedance and fast switching speeds, with material compliance to RoHS requirements and Halogen Free standards. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. Product Attributes Brand: Leshan Radio Company, LTD. Material Compliance:

Product OverviewThe MEE3710T is a N-Channel enhancement mode power field effect transistor utilizing Force-MOS patented Extended Trench Gate (ETG) technology. This advanced technology minimizes on-state resistance and gate charge while enhancing avalanche capability. It is particularly suited for medium voltage applications such as chargers, adapters, notebook computer power management, and lighting dimming circuits, offering low in-line power loss in a very small surface

Product Overview The MCAC95N06Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology for enhanced performance. It offers excellent heat dissipation, a high-density cell design for low RDS(on), and is housed in a DFN5060 package. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1 compliant, and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power management and robust thermal performance.

Product OverviewThe MS10N65HCT1 is a high-performance N-channel MOSFET from Maspower, designed for efficient power management applications. It features ultra-low on-resistance (RDS(on)) of 0.55 and ultra-low gate charge (Qg) of 14nC, ensuring minimal power loss and fast switching speeds. This device is 100% UIS tested and RoHS compliant, making it suitable for demanding power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supply (UPS)

Product OverviewThis N-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is ideal for power management in telecom and industrial automation, motor drives, uninterruptible power supplies, and current switching in DC/DC & AC/DC (SR) sub-systems.Product AttributesBrand: MDDCertifications: RoHS CompliantOrigin: Craftsman-Made Consciention

Product OverviewThe ME7423 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.Product AttributesBrand: ME

Product Overview The SI2321 is a high-performance MOSFET designed for various applications. It offers excellent stability and uniformity, making it a reliable choice for demanding environments. This device is Halogen Free, "Green" compliant, and meets UL 94 V-0 flammability rating, ensuring environmental responsibility and safety. It is also Lead Free Finish/RoHS Compliant, with the "P" suffix designating RoHS compliance. Product Attributes Brand: MCCSEMI.COM Certifications:

Product OverviewThe ME4542 is an N and P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This technology is optimized for minimal on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.Product

Product Overview The DN1509 is a low threshold, depletion-mode, normally-on N-Channel Vertical DMOS FET. It features high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it suitable for a variety of switching and amplifying applications. Its advanced vertical DMOS structure offers power-handling capabilities comparable to bipolar transistors while retaining the advantages of MOS devices, such as freedom from thermal runaway and

Product Overview The MCU20P10 is a P-Channel MOSFET featuring Advanced Trench Process Technology and a High Density Cell Design for ultra-low on-resistance. It offers a reliable and rugged construction, with an epoxy that meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This product is halogen-free available upon request by adding the "-HF" suffix and is Lead Free Finish/RoHS Compliant, indicated by the "P" suffix. It is suitable for applications

650V N-Channel Enhancement Mode MOSFET MDD20N65F/MDD20N65P This 650V N-Channel Enhancement Mode MOSFET offers ultra-low gate charge, low reverse transfer capacitance, and fast switching capabilities. It is avalanche energy tested and features improved dv/dt capability for high ruggedness. Ideal for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridges, and LED power supplies. General Features Ultra low gate charge Low reverse transfer