Single FETs, MOSFETs

Product OverviewThe MS35N120HGF4 is a high-performance N-Channel MOSFET from Maspower, featuring low RDS(on) and high current handling capability. It incorporates a fast intrinsic diode and is avalanche rated, making it suitable for demanding power applications. Its design prioritizes efficiency and reliability in high-voltage switching and pulse power circuits.Product AttributesBrand: MaspowerModel: MS35N120HGF4 H1.02Technical SpecificationsParameterSymbolTest ConditionsMinT

Product OverviewThe MDD4N60D is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It offers ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.Product AttributesBrand: Microdiode Electronics (Shenzhen

Product OverviewThe MS18N100HCC0 is a high-performance power MOSFET designed for high-efficiency applications. It features a VDS of 1000V and an ID of 18A, with low Crss, low gate charge, and improved dv/dt capability, making it ideal for demanding power supply and lighting applications.Product AttributesBrand: MaspowerModel: MS18N100HCC0Technical SpecificationsParameterSymbolTests conditionsMinTypeMaxUnitAbsolute RatingsDrain-Source VoltageVDSS1000VTransient Gate-Source

Product OverviewThe MGB100D06L is an N+N MOSFET with a 60V breakdown voltage, 29A continuous drain current, and a low on-state resistance of

Product OverviewThe MD28N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. It utilizes advanced MOSFET technology to minimize conduction losses, enhance switching speeds, and improve avalanche energy capability. This transistor is well-suited for Switched-Mode Power Supplies (SMPS), high-speed switching circuits, and general-purpose applications.Product AttributesBrand: MNS (derived from www.mns-kx.com)Material: Silicon N-ChannelCerti

Product OverviewThe MSN4688 is a high-performance MOSFET offering low on-resistance and versatile 4.5V/-4.5V drive capabilities. Designed for efficiency and reliability, it is RoHS compliant and suitable for demanding power management applications.Product AttributesBrand: MaspowerModel: MSN4688 H1.02Certifications: RoHS compliantTechnical SpecificationsParameterSymbolConditionsN-ChP-ChUnitAbsolute Maximum RatingsDrain-to-Source VoltageVDSSTc = 25C60-45VGate-to-Source

Product Overview The SI2305CHE3 is a P-Channel MOSFET designed for high-performance applications. It features AEC-Q101 qualification, low RDS(ON) and FOM, and extremely low switching loss. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, designated as a Green Device. It is also Lead Free and RoHS Compliant. The MOSFET is suitable for various applications requiring efficient power management

Product OverviewThe ME12N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include extremely low RDS

Product OverviewThe AMDU040N014VRH is a single N-channel Trench power MOSFET from Magnachip Power Technology. It features enhanced avalanche ruggedness, 100% avalanche tested, and a maximum junction temperature of 175C. This AEC-Q101 qualified MOSFET is designed for DC/DC and AC/DC converters, as well as brushed and BLDC motor drive systems.Product AttributesBrand: Magnachip Power TechnologyTechnology: Trench power MOSFETChannel Type: N-channel, normal levelCertifications:

Product OverviewThe MEE7816S is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density EMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management and other battery-powered circuits. It offers low in-line power loss in a very small outline surface mount package.Product AttributesBrand: MEE (implied from product name MEE7816S-G

Product Overview The SIL05N06 is an N-Channel Power MOSFET featuring Advanced Trench MOSFET Process Technology. It is designed for reliable performance with a high operating junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C. This MOSFET meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free available upon request. It is also Lead Free Finish/RoHS Compliant. Product Attributes Brand: MCC (Micro

Product OverviewThe MDD2N60D is a 600V N-Channel Enhancement Mode MOSFET designed for various power applications. It offers low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched mode power supplies, and LED drivers.Product AttributesCertifications: RoHS compliantTechnical SpecificationsParameterSymbolValueUnitConditionDrain-Source VoltageVDS600VGate-Source VoltageVGS±30VContinuous Drain

Product Overview This product is a high-performance MOSFET designed for various applications. It features ESD protection up to 20V and meets UL 94V-0 flammability rating. The device is RoHS compliant and available in Halogen-Free versions upon request. It operates within a wide temperature range, making it suitable for demanding environments. Product Attributes Brand: Micro Commercial Components Corp (MCC) RoHS Compliance: Yes (Suffix 'P' designates RoHS compliant) Halogen

Product OverviewThe MPG30N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The

Product OverviewThis enhancement-mode (normally-off) Vertical DMOS FET utilizes Supertex's silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low

Product OverviewThe ME2306A is an N-Channel logic enhancement mode power field-effect transistor featuring high cell density and DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is well-suited for very small outline surface mount packages.Product AttributesBrand: Matsuki Electric/ Force

Micro Commercial Components Corp. - Split Gate Trench MOSFET Product Overview This Split Gate Trench MOSFET is designed for high-performance applications, featuring AEC-Q101 qualification for automotive and industrial reliability. Its advanced Split Gate Trench MOSFET technology and high-density cell design contribute to low RDS(ON) and excellent heat dissipation. The device is Moisture Sensitivity Level 1 compliant and RoHS compliant, making it suitable for a wide range of

Product Overview The MCG50P03 is a P-Channel MOSFET featuring Trench Power LV MOSFET Technology for high-speed switching and a high-density cell design for low RDS(on). This device is designed with an epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, a "Green" Device. It also boasts a Lead Free Finish/RoHS Compliant design. Ideal for various electronic applications requiring efficient power management. Product Attributes

Product OverviewThe MS3N100HGC0/D0/T1/D1/T0 is an N-channel power MOSFET designed for switching applications. It features low gate charge (typical 12nC), low Crss (typical 5.5pF), 100% avalanche tested, fast switching, and improved dv/dt capability. This device offers a high drain-source voltage of 1000V and a continuous drain current of 3A.Product AttributesBrand: MaspowerOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical

Product OverviewThe TC2320 is a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and a proven silicon gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally induced secondary breakdown, making it