Single FETs, MOSFETs
Planar Power MOSFET MCC MCU05N60A-TP RoHS Compliant Lead Free Finish UL 94 V0 Flammability Rating
Product Overview The MCU05N60A is a Planar Power MOSFET utilizing advanced technology to achieve lower capacitance and moisture sensitivity. This Halogen-Free, "Green" device meets UL 94 V-0 flammability rating and features a Lead-Free Finish RoHS Compliant design. It is suitable for applications ...
Industrial grade MOSFET MASPOWER MS35N120HGF4 with 900W power dissipation and wide temperature range
Product OverviewThe MS35N120HGF4 is a high-performance N-Channel MOSFET from Maspower, featuring low RDS(on) and high current handling capability. It incorporates a fast intrinsic diode and is avalanche rated, making it suitable for demanding power applications. Its design prioritizes efficiency and ...
MDD Microdiode Semiconductor MDD4N60D N Channel MOSFET 600V Voltage Rating for Power Supply Circuits
Product OverviewThe MDD4N60D is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It offers ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for ...
Power MOSFET MASPOWER MS18N100HCC0 featuring 1000V drain source voltage and low gate charge for lighting
Product OverviewThe MS18N100HCC0 is a high-performance power MOSFET designed for high-efficiency applications. It features a VDS of 1000V and an ID of 18A, with low Crss, low gate charge, and improved dv/dt capability, making it ideal for demanding power supply and lighting applications.Product ...
Power MOSFET Minos MD28N50 Silicon N Channel Device with High Pulsed Current and Wide Temperature Range
Product OverviewThe MD28N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. It utilizes advanced MOSFET technology to minimize conduction losses, enhance switching speeds, and improve avalanche energy capability. This transistor is well-suited for Switched...
N N MOSFET with 29A Continuous Drain Current and 60V Breakdown Voltage Megain MGB100D06L Device
Product OverviewThe MGB100D06L is an N+N MOSFET with a 60V breakdown voltage, 29A continuous drain current, and a low on-state resistance of
MOSFET transistor MASPOWER MSN4688 offering versatile drive capabilities for power systems
Product OverviewThe MSN4688 is a high-performance MOSFET offering low on-resistance and versatile 4.5V/-4.5V drive capabilities. Designed for efficiency and reliability, it is RoHS compliant and suitable for demanding power management applications.Product AttributesBrand: MaspowerModel: MSN4688 H1...
Halogen Free MCC SI2305CHE3 TP P Channel MOSFET with Lead Free Finish and Moisture Sensitivity Level 1
Product Overview The SI2305CHE3 is a P-Channel MOSFET designed for high-performance applications. It features AEC-Q101 qualification, low RDS(ON) and FOM, and extremely low switching loss. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, ...
Low resistance power transistor MATSUKI ME12N15-G designed for switching in battery powered circuits
Product OverviewThe ME12N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook ...
Single N channel Trench MOSFET MagnaChip Semicon AMDU040N014VRH with PDFN56 package and tested avalanche ruggedness
Product OverviewThe AMDU040N014VRH is a single N-channel Trench power MOSFET from Magnachip Power Technology. It features enhanced avalanche ruggedness, 100% avalanche tested, and a maximum junction temperature of 175C. This AEC-Q101 qualified MOSFET is designed for DC/DC and AC/DC converters, as ...
Low resistance N Channel MOSFET MATSUKI MEE7816S for power management in portable electronic circuits
Product OverviewThe MEE7816S is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density EMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management ...
High Reliability N Channel MOSFET MCC SIL05N06 TP with Advanced Trench Technology and RoHS Compliance
Product Overview The SIL05N06 is an N-Channel Power MOSFET featuring Advanced Trench MOSFET Process Technology. It is designed for reliable performance with a high operating junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C. This MOSFET meets UL 94 V-0 ...
power MOSFET MDD Microdiode Semiconductor MDD2N60D 600V N Channel Enhancement Mode with low RDS
Product OverviewThe MDD2N60D is a 600V N-Channel Enhancement Mode MOSFET designed for various power applications. It offers low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched mode power supplies, and LED drivers...
Durable MCC BSS138A-TP MOSFET with 20V drain source breakdown voltage and low gate threshold voltage
Product Overview This product is a high-performance MOSFET designed for various applications. It features ESD protection up to 20V and meets UL 94V-0 flammability rating. The device is RoHS compliant and available in Halogen-Free versions upon request. It operates within a wide temperature range, ...
Power MOSFET Minos MPG30N10 Featuring High Density Cell Design and Low RDS ON for Switching Circuits
Product OverviewThe MPG30N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power ...
Integral source drain diode Vertical DMOS transistor MICROCHIP VN0104N3-G with fast switching speeds
Product OverviewThis enhancement-mode (normally-off) Vertical DMOS FET utilizes Supertex's silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and ...
Low Resistance N Channel Power MOSFET MATSUKI ME2306A Suitable for Notebook and Cellular Phone Power
Product OverviewThe ME2306A is an N-Channel logic enhancement mode power field-effect transistor featuring high cell density and DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management...
Split Gate Trench MOSFET MCC MCG53N06AHE3 TP with High Density Cell Design and Low RDS ON Resistance
Micro Commercial Components Corp. - Split Gate Trench MOSFET Product Overview This Split Gate Trench MOSFET is designed for high-performance applications, featuring AEC-Q101 qualification for automotive and industrial reliability. Its advanced Split Gate Trench MOSFET technology and high-density ...
N channel power MOSFET MASPOWER MS3N100HGD0 with 1000V drain source voltage and 3A continuous current
Product OverviewThe MS3N100HGC0/D0/T1/D1/T0 is an N-channel power MOSFET designed for switching applications. It features low gate charge (typical 12nC), low Crss (typical 5.5pF), 100% avalanche tested, fast switching, and improved dv/dt capability. This device offers a high drain-source voltage of ...
Power Management Device MCC MCG50P03 TP P Channel MOSFET Featuring Trench Power LV MOSFET Technology
Product Overview The MCG50P03 is a P-Channel MOSFET featuring Trench Power LV MOSFET Technology for high-speed switching and a high-density cell design for low RDS(on). This device is designed with an epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen ...
