Single FETs, MOSFETs

Product Overview The SI2318A is an N-Channel MOSFET featuring Trench LV MOSFET technology. Designed for reliability, it offers a wide operating and storage temperature range from -55C to +150C. This device is Halogen Free and RoHS Compliant, making it a 'Green' device. It is suitable for various applications requiring efficient power switching. Product Attributes Brand: MCCSEMI.COM Technology: Trench LV MOSFET Moisture Sensitivity Level: 1 Environmental: Halogen Free. Green

Product OverviewThe MDDG10R04B is a 100V N-Channel Enhancement Mode MOSFET designed for various power management applications. It offers low RDS(ON) & FOM, extremely low switching loss, and excellent reliability, making it suitable for battery management, power management for inverter systems, switching voltage regulators, DC-DC converters, and switched-mode power supplies.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCe

Product Overview The SI2305 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device offers efficient load switching with a focus on reliability and environmental considerations. Product Attributes Brand: MCCSEMI Device Type: P-Channel MOSFET Flammability Rating: UL 94 V-0 Moisture Sensitivity Level: 1

Product OverviewThe ME9435A is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. It offers lower power loss in a very small outline surface mount package.Product AttributesBrand: Matsuki Electric/Force MosProduct

Product OverviewThe MD33N25 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for SMPS, high-speed switching, and general-purpose applications.Product AttributesBrand: MNSCertifications: RoHS productTechnical SpecificationsParameterValueUnitDescriptionProduct CodeMD33N25PackageTO-247VDS250VDrain-to-Source VoltageID33AContinuous

Product Overview The SIL2308 is a Dual N&P-Channel MOSFET designed for various electronic applications. It offers low input/output leakage, exceptional ON resistance, and maximum DC current capability. The epoxy meets UL 94 V-0 flammability rating and the device is Moisture Sensitivity Level 1 compliant. Halogen-free options are available by adding the "-HF" suffix, and lead-free/RoHS compliant versions are designated with a "P" suffix. Product Attributes Brand: MCCSEMI

Product Overview The 2N7002KA is an N-Channel MOSFET designed as a voltage-controlled small signal switch. It features a high-density cell design for low RDS(ON) and is ESD protected up to 2KV (HBM). This component is suitable for applications requiring a reliable and efficient switching solution. The epoxy used meets UL 94 V-0 flammability rating, and it is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request by adding the "-HF" suffix. The

Product OverviewThe ME2306D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like cellular phone and notebook computer power management, and other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection and a super high-density

Product DescriptionThe K2698-MNS is a silicon N-Channel Enhanced Power MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is well-suited for SMPS, high-speed switching, and general-purpose applications.Product AttributesBrand: MNSOrigin: Shenzhen Minos Technology Co., Ltd.Material: SiliconCertifications: RoHS productTechnical SpecificationsParameterRatingUnitsConditionsMin.Typ.Max

Product OverviewThe MGC038N10N is an N-Channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS guaranteed. This device is designed for high-frequency switching applications and is available as a Green Device. Its key applications include motor drivers and Battery Management Systems (BMS).Product AttributesBrand: MegainPart Number: MGC038N10NPackage: PDFN 5x6Form: Tape & ReelQuantity: 5000 PCS/Tape & ReelMarking: MGC038N10NAvailability:

Product OverviewThe IRLR024NTR is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDSon, and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high

Product OverviewThe ME80N08A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include

Product Overview The Mini-Circuits TAV-541+ is an ultra-low noise, high IP3 E-PHEMT transistor designed for demanding base station applications. Manufactured using Enhancement mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT) technology, it operates with a single positive supply voltage. The device offers an outstanding Noise Figure, particularly below 2.5 GHz, and high IP3 performance. It is suitable for a wide bandwidth from 0.045 to 6 GHz, making it ideal for

Product Overview The LP8314DT1AG is a 30V P-Channel (D-S) MOSFET designed for load switches, DC/DC conversion, and motor drive applications. It features low RDS(ON) achieved through trench technology, resulting in low thermal impedance and fast switching speeds. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications requiring unique site and control change requirements. The product complies with RoHS requirements

Product OverviewThe BSS138W is a 60V N-channel enhancement mode MOSFET designed with MDD's unique device technology. It offers low on-resistance (RDS(on)), fast switching speeds, and good ESD performance. This MOSFET is suitable for load switching in portable devices, battery-powered systems, DC-DC converters, and LCD display inverters.Product AttributesBrand: Microdiode Electronics (Shenzhen)Origin: Craftsman-Made Consciention ChipCertifications: ESD rating of class 2 per

Product Overview The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), ensuring efficient power handling. This AEC-Q101 qualified device is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating, making it a sustainable and reliable choice for various industrial and automotive uses. Its moisture sensitivity level is 1, and it is suitable for surface mounting on

Product OverviewThe ME4411-G is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design significantly minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.Product

Product Overview The MCG10P03 is a P-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current capabilities, making it suitable for various applications. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is moisture sensitivity level 1 compliant, and is halogen-free and RoHS compliant. Its robust design ensures reliable performance across a wide operating

Product Overview The LP1480WT1G and S-LP1480WT1G are P-Channel Power MOSFETs designed for power management applications. They offer low on-resistance (RDS(ON)) at various gate-source voltages and drain currents, making them suitable for notebook power management, portable equipment, battery-powered systems, load switches, and DSCs. The S-prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability. These devices comply with RoHS

Product DescriptionThe IRF3710 is a silicon N-Channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for Switch Mode Power Supplies (SMPS), high-speed switching applications, and general-purpose uses.Product AttributesBrand: www.mns-kx.comOrigin: Shenzhen Minos Technology Co., Ltd.Material: Silicon N-Channel Enhanced