Single FETs, MOSFETs
High Reliability Power MOSFET JSCJ CJU07N06 Featuring Low RDS ON and Fast Switching Characteristics
Product OverviewThe CJU07N06 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology and design, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications. Key features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.Product
Load Switching N Channel MOSFET JSCJ CJ2304 SOT 23 Package Ideal for Portable and DC DC Applications
Product OverviewThe CJ2304 is a N-Channel MOSFET in a SOT-23 package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology for enhanced performance.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDModel: CJ2304Package: SOT-23Material: Plastic-EncapsulatedOrigin: China (implied by manufacturer name)Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitMaximum RatingsDrain
Small Signal N Channel MOSFET JSCJ 2N7002KW SOT 323 Package with High Saturation Current Capability
Product OverviewThe 2N7002KW is a N-Channel MOSFET in a SOT-323 plastic package, designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(on), is rugged and reliable, offers high saturation current capability, and is ESD protected. This MOSFET is suitable for various applications requiring efficient switching and low on-resistance.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: China (implied
Low RDS ON and High Stability P Channel Power MOSFET JSCJ CJAB55P03 Suitable for Battery Applications
Product OverviewThe CJAB55P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery and loading switching. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special
Power MOSFET JSCJ CJU100N03 Featuring Low Gate Body Leakage Current and Solid Green Molding Compound
Product OverviewThe CJU100N03 is an N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for power switching applications and offers advantages such as good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. The device is specified for avalanche energy.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDDevice Code: U100N03Package Type:
N Channel Power MOSFET JSCJ CJAB40N03 Ideal for Battery Switches Load Switches and SMPS Applications
Product OverviewThe CJAB40N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPart
N Channel Enhancement Mode MOSFET JSMSEMI AO3400 Designed for Low Voltage and High Current Switching
Product Overview The JSMICRO Semiconductor AO3400 is an N-Channel Enhancement mode Field Effect Transistor designed for general switching and low-voltage power supply circuits. It offers strong current capability and low on-resistance, making it suitable for various applications. Product Attributes Brand: JSMICRO Semiconductor Model: AO3400 Package Type: SOT-23 Origin: Not specified Material: Not specified Color: Not specified Certifications: Not specified Technical
P channel MOSFET JSCJ CJ2333 in compact SOT 23 package for battery switches and portable electronics
Product OverviewThe CJ2333 is a P-channel MOSFET in a SOT-23 package, designed for applications requiring excellent RDS(on) and low gate charge. It is suitable for DC/DC converters, load switches for portable devices, and battery switches.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDProduct Code: CJ2333Package Type: SOT-23Material: Plastic-EncapsulateTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitABSOLUTE MAXIMUM RATINGSDrain
Low Logic Level Gate Drive MOSFET N Channel JSCJ CJBA3144K DFN1006 3L Package for Power Switching
DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3144K N-Channel MOSFETThe CJBA3144K is an N-Channel MOSFET in a DFN1006-3L package, designed for surface mounting. It features low RDS(on) and operates at low logic level gate drive, with ESD protected gate. This product is lead-free and suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS
P Channel Power MOSFET JSCJ CJAB14P04 with Ultra Low RDS ON and High Avalanche Voltage Stability
Product OverviewThe CJAB14P04 is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity. The excellent package design ensures good heat dissipation, and special process technology provides high ESD capability. This MOSFET is suitable for battery and loading
DFNWB2X2-6L-U Package MOSFET JSCJ CJMNP517 Suitable for Battery Powered Systems and DC DC Converters
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS CJMNP517 The CJMNP517 is a DFNWB2X2-6L-U package MOSFET featuring N-Channel and P-Channel configurations. It is designed for power management applications in notebook computers, portable equipment, battery-powered systems, DC/DC converters, and load switches. Key advantages include a super high-density cell design for exceptional on-resistance and maximum DC current capability, resulting in extremely low RDS(ON). Product Attributes
Dual N channel MOSFET JSCJ 2N7002DW with low on resistance and rugged construction in SOT 363 package
Product OverviewThe 2N7002DW is a dual N-channel MOSFET in a SOT-363 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), making it suitable for load switching in portable devices and DC/DC converters. This MOSFET is rugged, reliable, and offers high saturation current capability, functioning as a voltage-controlled small-signal switch.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage: SOT
load switch MOSFET JSCJ CJU12P06 P Channel with ultra low gate charge and excellent heat dissipation
Product OverviewThe CJU12P06 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed for excellent RDS(ON), low gate charge, and operation with low gate voltages. Its features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. This device is suitable for use as a load switch or in PWM applications, and is ideal for power switching applications
N channel MOSFET transistor JSCJ 2N7002K with rugged construction and high saturation current
Product OverviewThe 2N7002K is an N-channel MOSFET in a SOT-23 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), rugged and reliable construction, and high saturation current capability. This device is ESD protected and suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDPackage: SOT-23Molding Compound:
Dual P Channel TrenchFET Power MOSFET Model JSCJ CJL2301 Designed for Portable Device DC DC Converter
Product OverviewThe CJL2301 is a Dual P-Channel TrenchFET Power MOSFET, equivalent to two CJ2301 devices. It is designed for applications such as DC/DC converters and load switches in portable devices.Product AttributesBrand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDModel: CJL2301Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-20VZero gate voltage drain currentIDSSVDS =-20V,VGS = 0V-1AGate
N Channel Power MOSFET JSCJ CJAB65N04 with High Density Cell Design and Excellent Thermal Management
Product OverviewThe CJAB65N04 is an N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capabilities, making it suitable for a wide range of applications including SMPS, general purpose, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra-low RDS(ON) and good stability with high EAS, while the lead-free product
High Stability P Channel Power MOSFET JSCJ CJAC50P03 with Low Gate Charge and Avalanche Voltage
CJAC50P03 P-Channel Power MOSFETThe CJAC50P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide range of applications, offering high density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for heat dissipation, and special process technology for high ESD
Power Management Dual P Channel MOSFET JSCJ CJL2623 in Compact SOT 23 6L Package for Portable Devices
CJL2623 Dual P-Channel MOSFETThe CJL2623 is a Dual P-Channel MOSFET in a SOT-23-6L package, designed for efficient power management in portable devices. It features TrenchFET technology for low on-resistance and low gate charge, making it ideal for DC/DC converters and load switching applications. This MOSFET is suitable for commercial and industrial use, offering reliable performance in a compact surface mount package.Product AttributesBrand: JIANGSU CHANGJIANG ELECTRONICS
Power MOSFET JSCJ CJBD3020 featuring special process technology for enhanced ESD and stable performance
Product OverviewThe CJBD3020 is a N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and
Power MOSFET JSCJ CJAC110SN10A N Channel with Lead Free Package and High Pulsed Drain Current Rating
Product OverviewThe CJAC110SN10A is an N-Channel Power MOSFET utilizing shielded gate trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management. Key features include high power and current handling capability, load switching, a high-density cell design for ultra
